• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 정기총회 및 학술대회 전문대학교육위원
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• pp.85-88
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• 2008

Drift velocities and Distribution Function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300[Td]$ by a two term Boltzmann equation and by a Monte Carlo simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight method, The results show that the deduced electron drift velocities agree reasonably well with theoretical for a rang of E/N values The results simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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• pp.106-109
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• 2002

This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar + $SiH_4$ mixture gases ($SiH_4$--0.5%, 2.5%, 5%) over the range of E/N =0.01${\sim}$300[Td]. P=0.1, 1, 5.0[Torr] by Monte Carlo the Backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF. PT.SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1566-1567
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• 2006

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300$[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight (TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.451-452
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• 2007

Drift velocities for electrons in $SF_6$-Ar mixtures gas by simulation has been analysed over the EIN range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight (TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients. longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.507-508
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• 2006

$SF_6$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_6$ gas characteristics. Electron transport coefficients in $SF_6-N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

• Nuclear Engineering and Technology
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• 제55권1호
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• pp.229-237
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• 2023

The mechanics underlying photon and electron interactions was validated using our developed Brachytherapy computer code for high Dose Rate (HDR). By comparing the photon cross-section utilizing multiple physics libraries in the developed code, the results were benchmarked against experimental and theoretical findings. Klein-Nishina and experimental cross-section results were in good agreement with the Livermore library results. For two therapeutically relevant materials, the first scattered electron range was measured within 1 mm and 2 mm, which has significant implications for the interpretation of the kernel dose spikes observed in previous research.

• 조명전기설비학회논문지
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• 제13권2호
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• pp.95-101
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• 1999

$ SF_6$ 가스의 전자에너지 분포함수를 평균에너지 평형 영역에 대하여 E/N=500~800[Td]에서 해석하였다. 본 논문은 저자들에 의해 결정된 충돌 단면적을 사용하여 몬테칼로 시뮬레이션과 볼쯔만 방정식에 의해 E/N=150~800[Td]범위에서 계산된 $ SF_6$ 가스의 전자 수송 특성과 TOF법에서 구한 전자군 파라미터 값들을 나타냈다. 전자이동속도 전자 이온화 또는 부착계수, 종.횡 방향 확산계수 등의 전자군 파라미터 값들은 E/N 범위에서 실험 치와 이론 치가 일치하였다. 전자사태의 특성은 전자에너지의 비평형 영역에서 고려되었다.

• Journal of Radiation Protection and Research
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• 제11권1호
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• pp.29-36
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• 1986

본 연구에서는 NaI검출기에서 감마스펙트럼 시뮤레이션 코드인 GESS를 개발하였다. 감마선에 의한 모든 상호작용이 시뮤레이션 과정에서 고려되었으며, 생성된 하전입자의 스펙트럼은 CSDA 모델에 기반을 두어 계산하였다. 매질내에서 입자 수송에 대한 해석수단으로는 몬테칼로 방법을 적용하였다. 코드의 검증을 위하여 1.33MeV의 입사 감마선에 대한 스펙트럼이 본 연구에서 개발된 코드에 의해 계산되었으며, 계산된 스펙트럼은 대체적으로 실험에서 얻은 스펙트럼과 거의 동일한 분포를 나타내고 있다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.511-515
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• 2013

A Monte Carlo (MC) simulation study has been done in order to investigate the effects of line-edge-roughness (LER) induced by either 1P1E (single-patterning and single-etching) or 2P2E (double-patterning and double-etching) on fully-depleted silicon-on-insulator (FDSOI) tri-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). Three parameters for characterizing the LER profile [i.e., root-mean square deviation (${\sigma}$), correlation length (${\zeta}$), and fractal dimension (D)] are extracted from the image-processed scanning electron microscopy (SEM) image for each photolithography method. It is experimentally verified that two parameters (i.e., ${\sigma}$ and D) are almost the same in each case, but the correlation length in the 2P2E case is longer than that in the 1P1E case. The 2P2E-LER-induced $V_TH$ variation in FDSOI tri-gate MOSFETs is smaller than the 1P1E-LER-induced $V_TH$ variation. The total random variation in $V_TH$, however, is very dependent on the other major random variation sources, such as random dopant fluctuation (RDF) and work-function variation (WFV).

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 1999년도 추계종합학술대회
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• pp.520-524
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• 1999

임팩트이온화율은 낮은 전자에너지에서는 이방성이지만, 임팩트이온화가 자주 발생하는 높은 에너지 영역에서는 등방성이 된다. 본 연구에서는 300K와 77K에서의 임팩트이온화율을 계산하기 위하여 의사포텐셜 방법으로 구한 full 에너지 밴드 구조와 페르미의 황금법칙 군 사용하였다. 계산된 임팩트이온화율은 수정된 Keldysh공식을 사용하여 표현되었다. GaAs 임팩트이온화 모델의 타당성을 고찰하기 위해 Monte Carlo simulator를 제작하여 300K와 77K에서의 임팩트이온화 계수를 구하여 비교하였다 시뮬레이션 결과, 300K에서 임팩트이온화 과정의 이방성특성이 관찰되었지만, 77K에서는 거의 임팩트이온화 계수가 일정함을 입증하였다. 특히, 77K에서 <110>방향을 따라 적용된 전계에서는 이방성특성이 나타남을 입증하였다.