• Title/Summary/Keyword: Electrode pattern

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Ohmic Contact Properties of Nonpolar GaN Grown on r-plane Sapphire Substrate with Different Miscut Angle

  • Shin, Dongsu;Park, Jinsub
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.314.1-314.1
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    • 2014
  • The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.

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Analysis of Electrical discharge signal according to particle state in GIS (GIS내 파티클의 상태에 따른 전기적 방전 신호 분석)

  • Lee, Dong-Zoon;Lee, Gon;Kwak, Hee-Ro;Kim, Kyung-Wha;Kwon, Dong-Jin
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.1084-1086
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    • 1999
  • The breakdown was caused by particle in GIS and various methode was suggested to find particle in GIS. In this paper, four states of particle was imitated which are particle on electrode, particle on enclosure, particle on spacer and crossing particle. The discharge voltage of each states was classified by four voltages which are initial, development, later and close discharge voltage. $\Phi$-Q-N pattern was analyzed according to the states and to the discharge voltages. In the result, the electrical discharge pattern according to the particle states may be distinguished.

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TIG Welding Process Monitoring using Photo Diode (광소자를 이용한 TIG 용접 가공의 모니터링)

  • 장욱진;김재도
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1995.04b
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    • pp.383-388
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    • 1995
  • The ARC light has been measured using photo-detect system under different TIG welding condition. Light detect system consists of photo diode, ND Filter, OP Amp. A/D convertor and PC. The purpose of this experiment is to show the relationship between ARC light and process variables such as welding current, torch travel speed, etc. The results can be applied to estimate the condition of welding process and the quality of welding products. The signal of ARC light has periodic patterns in good TIG welding condition whereas in abnormal condition the signal has different pattern. Amount of Ar shielding gas and distance from electrode to specimen affect the signal pattern significantly.

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Auxiliary Address Pulse Driving Scheme for Improving Luminance and Luminous Efficiency in 42-inch WVGA Plasma Display Panel

  • Park, Ki-Hyung;Lee, Eun-Cheol;Cho, Ki-Duck;Tae, Heung-Sik
    • Journal of Information Display
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    • v.5 no.1
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    • pp.16-21
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    • 2004
  • The effects of an auxiliary address pulse driving scheme, in which an auxiliary short pulse is applied to the address electrode during a sustain-period, were examined under the various image patterns of the 42-inch WVGA ac-PDP. When the auxiliary address pulse driving scheme was applied, the luminance of the red, green and blue cells were measured respectively. And the luminance, luminous efficiency, and current were measured under the full-white pattern of the 42-inch ac-PDP. As a result, the luminance of blue cells was improved approximately by 17 %, whereas the luminous efficiency of the full-white pattern was improved approximately by 34 % without a misfiring discharge in comparison with conventional driving scheme.

Dielectric Breakdown Voltage and Dielectric Properties of High Voltage Mutilayer Ceramic Capacitor with C0G Temperature Coefficient Characteristics (C0G 온도계수 특성을 가지는 고압용 적층 칩 캐패시티의 유전 및 내전압 특성)

  • Yoon, Jung-Rag;Woo, Byong-Chul;Chung, Tae-Serk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.137-143
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    • 2008
  • High voltage MLCCs with C0G temperature coefficient characteristics could apply DC-DC invertor were investigated for its dielectric properties. Also we manufactured MLCC through various process and studied the characteristics of dielectric break down voltage [BDV] and dielectric property as the variation of thickness in the green sheet and how to pattern the internal electrode. As the thickness of green sheet is increase, the dielectric BDV per unit thickness is decreased. But as the pattern of internal electrodes were floated we could manufacture the high voltage MLCC maintained its dielectric BDV a unit.

Pattern Analysis by Using PD Signal generated in Bushings (부싱에서 발생하는 부분방전 신호를 이용한 패턴분석(1))

  • Lee, Chang-Jun;Park, J.H.;Ham, Kil-Ho;Kim, Hyuk-Tae;Kim, Pyung-Jung
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1951-1953
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    • 2000
  • Partial Discharge is non-disruptive discharge, which can be discriminated to 3 kinds as firstly, internal discharge which is caused by internal voids inside of insulator, secondly, surface discharge which occurs from the surface of insulator and finally, corona discharge which is from the surface of an electrode. In this thesis, three kinds of defects are artificially made to the inside and the surface of the epoxy resine busing with internal voltage detection sensor, which is practically equipped into SF6 gas insulated switchgear for 22.9kV distribution line, so that discrimination of three kinds of PD signals by means of phi-q-n pattern analysis method was performed.

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Dielectric Strength According to Flow Pattern in EHV Power Cable Insulation (초고압 전력케이블 절연체의 Flow Pattern에 따른 절연성능 고찰)

  • LEE, Seung-Yop;KIM, Young-Ho;LEE, Sang-Jin;KIM, Dong-Wook;CHOI, Myung-Kyu
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1539-1541
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    • 2000
  • Insulation layers in XLPE power cables may have some patterns generated in the manufacturing process. They are called 'flow patterns' and show flow history of molten polyethylene between inner and outer semiconducting layers. Flow patterns are even seen with naked human eyes and suspected to be inhomogeniety of insulation, weakening insulation performance. Investigated in this paper is electrical treeing resistance and ac breakdown strength according to flow patterns. Experiments of electrical treeing and ac breakdown strength by means of ramp tests were conducted using newly developed electrode system with point-to-plane structure and sphere-to-sphere structure, respectively. All results were analyzed with the application of statistics, showing little differences.

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Development of Electronic Tongue System Using Fuzzy C-Means Algorithm Combined to PCA Method (PCA와 결합된 Fuzzy C-Means 알고리즘을 이용한 전자 혀 시스템 개발)

  • Jung Woo Suk;Hong Chul Ho;Kim Jeong Do
    • Journal of Institute of Control, Robotics and Systems
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    • v.11 no.2
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    • pp.109-116
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    • 2005
  • In this paper, we investigate the visual and quantitative analysis at the same time with an electronic tongue(e-tongue) system using an array of ISE(ion-selective electrode). We apply the FCM(fuzzy c-means) algorithm combined with PCA(principal component analysis), which can be reduced multi-dimensional data to third-dimensional data, to classify data patterns detected by E-Tongue system. The proposed technique can be designed to solve the cluster centers and membership grade of patterns combined with the output results obtained by PCA method. According to the proposed technique, the membership grade of unknown pattern, which does not shown previously can be determined and analyzed visually. Conclusionally, the relationship between the standard patterns and unknown pattern can be easily analyzed. Throughout the experimental trials, the proposed technique has been confirmed using developed E-Tongue system.

Three-dimensional and Multilayered Structure Prepared by Area of Platinum Transfer Printing (전사 인쇄에 의한 3차원 백금 다공성 다층구조)

  • Jeong, Seung-Jae;Choi, Yong Ho;Cho, Jeong Ho
    • Journal of Sensor Science and Technology
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    • v.28 no.2
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    • pp.113-116
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    • 2019
  • A three-dimensional porous structure was fabricated by pattern transfer printing for applications of electrodes in gas sensors. To form replica patterns, solutions were mixed with acetone, toluene, heptane, and poly(methyl methacrylate). These replica patterns can also be formed on substrates such as polyimide, polydimethylsiloxane, and silicon. The wide range of line widths from 1 to $5{\mu}m$ was derived from the surface grating patterns of master substrates. The cross-bar pattern with 40 layers showed a thickness of 600 nm. The area of platinum transferred patterns with different line widths was enhanced to $20{\times}25mm$, which is applicable to various electrode patterns of gas sensors.

Detection of Organic Vapors Using Change of Fabry-Perot Fringe Pattern of Surface Functionalized Porous Silicon (표면 기능성을 가진 다공성 실리콘의 Fabry-Perot fringe pattern의 변화를 이용한 유기 화합물의 감지)

  • Hwang, Minwoo;Cho, Sungdong
    • Journal of Integrative Natural Science
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    • v.3 no.3
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    • pp.168-173
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    • 2010
  • Novel porous silicon chip exhibiting dual optical properties, both Frbry-Perot fringe (optical reflectivity) and photoluminescence had been developed and used as chemical sensors. Porous silicon samples were prepared by an electrochemical etch of p-type sillicon wafer (boron-doped, <100> orientation, resistivity 1 - 10 ${\Omega}$). The ething solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF (48% by weight). The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Ething was carried out as a two-electrode Kithley 2420 preocedure at an anodic current. The surface of porous silicon was characterized by FT-IR instrument. The porosity of samples was about 80%. Three different types of porous silicon, fresh porous silicon (Si-H termianated), oxidized porous silicon (Si-OH terminated), and surface-derivatized porous silicon (Si-R terminated), were prepared by the thermal oxidation and hydrosilylation. Then the samples were exposed to the wapor of various organics vapors. such as chloroform, hexane, methanol, benzene, isopropanol, and toluene. Both reflectivity and photoluminescence were simultaneously measured under the exposure of organic wapors.