• Title/Summary/Keyword: Electrode force

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A Low Voltage Driven Electrostatic Micro Actuator with an Added Vertical Electrode for Optical Switching (추가된 수직전글을 구비한 저전압 구동의 광 스위칭용 정전구동 마이크로 액츄에이터)

  • Yoon, Yong-Seop;Bae, Ki-Deok;Choi, Hyung;Koh, Byung-Cheon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.1
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    • pp.55-59
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    • 2003
  • With the progress of optical communication technology recently, the development of micro actuator using MEMS technology has been made for optical switching. The actuation types are various; electrostatic, electromagnetic, and electrostatic +electromagnetic etc. Among them, the electrostatic type is the most popular because of the relative ease of fabrication, integration and shielding as well as low power consumption. However, it needs a high voltage to generate a larger driving force. To overcome this problem, we proposed a new type of electrostatic actuator with an extra vertical electrode in addition to the horizontal one. The vertical electrode also lays a role of making the stable angular rotation as a stopper. From the theoretical analysis and experiment, we find the actuation voltage can be reduced up to 50 % of that of the conventional one.

Investigation of Electrostatic Force in Carbon Nanotube for the Analysis of Nonlinear Dynamic Behavior (카본 나노 튜브의 동역학 거동 해석에 필요한 정전기력 연구)

  • Lee J.K.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.840-843
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    • 2005
  • For an analysis of nonlinear dynamic behavior in carbon nanotube(CNT) an electrostatic force of CNT was investigated. The boundary condition in the CNT was assumed to clamped-clamped case at both ends. This type of CNT is widely used as micro and nano-sensors. For larger gaps in between sensor and electrode the van der Waals force can be ignored. The electrostatic force can be expressed as linear form using Taylor series. However, the first term of the series expansion was investigated here. The electrostatic force From this study we can conclude that for larger gaps the electrostatic force play an important role in determining the deflections as well as the pull-in voltage of simply supported switches.

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An Experiment about Assembling Condition of Carbon Nanotube Tip for AFM (주사탐침현미경용 카본나노튜브 팁의 조립 조건 실험)

  • 박준기;한창수
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.501-504
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    • 2004
  • This paper describes the fabrication method for atomic force microscopy(AFM) tip with multi-walled carbon nanotube(MWNT). For making a carbon nanotube (CNT) modified tips, AC electric field which cause the dielectrophoresis was used for alignment and deposition of CNTs in this research. By dropping the MWNT solution and applying an electric field between an AFM tip and an electrode, MWNTs which were dispersed into a diluted solution were directly assembled onto the apex of the AFM tips due to the attraction by the dielectrophoretic force. In this case, we investigate the effect of the angle between a tip axis and an electrode. Experimental setup were presented, and then CNT attached AFM tips are successfully shown in this paper.

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Cell Gap Dependent Transmission Characteristic of the Fringe-Field Switching Mode in a LC with Negative Dielectric Anisotropy

  • Kim, H.Y.;Kim, J.M.;Song, S.H.;Lee, S.K.;Lim, Y.J.;Jung, S.H.;Lee, S.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.539-542
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    • 2003
  • We have studied cell gap-dependent electrode-optic characteristics of the FFS mode using the LC with negative dielectric anisotropy. In case of a small cell gap of 2 ${\mu}m$, the transmittance at the center of pixel and common electrodes is low due to stronger influence of surface anchoring that holds the LC to the initial state than twisting force induced by neighboring LCs. In case of a large cell gap of 4 ${\mu}m$, the influence of surface anchoring force becomes weak so that the LCs at the center of pixel and common electrode can be twisted enough by applied voltage, giving rise to high transmittance. Therefore, we conclude that the light efficiency in the device is dependent on the cell gap.

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Development of the CuN/Cu/CuN type Electrode Material for the PDP (PDP용 CuN/Cu/CuN 전극재료의 개발에 관한 연구)

  • 성열문;정신수;류재하;김재성;조정수;박정후
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.05a
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    • pp.55-58
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    • 1996
  • A new type CuN/Cu/CuN thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the CuxN thin film was in the range of 20∼40(N) under the conditions of the N$_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450v and substrate bias voltage of -100V. The adhesive force was depended on the N$_2$ partial Pressure, discharge current and substrate bias voltage.

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Variable Optical Attenuator using Parallel Plate Electrostatic Actuator (평행 평판 정전형 구동기를 이용한 가변 광 감쇠기)

  • 김태엽;허재성;문성욱;신현준;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.4
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    • pp.448-452
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    • 2004
  • The micromachined variable optical attenuator(VOA) was presented in the paper. The VOA has two single mode fiber(SMF) aligned with free space and symmetric parallel plate actuator with microshutter, which can control a amount of light by driving the actuator. In the paper, analysis on driving performances of the VOA was performed and can be reduced threshold voltage through the decreasing displacement actuating range. This paper presents a VOA that is fabricated using bosch deep silicon etching process with silicon on insulator(SOD wafer. The VOA consists of driving electrode, ground electrode, actuating microshutter, and mechanical stopper. In this VOA, actuating shutter is driven by electrostatic force and the threshold voltage is close to 28V, 46V come along with the spring width of 5${\mu}{\textrm}{m}$, 7${\mu}{\textrm}{m}$ respectively. Attenuation range is measured from 2.4㏈ to 16.7㏈.

Dynamic Electrical Breakdown Characteristics of Cryogenic Liquid (극저온 액체의 동적 절연파괴 특성)

  • 김상현;김현희;김영석;정종만;정순용
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.4
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    • pp.321-326
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    • 1998
  • Electrical breakdown characteristics of liquid nitrogen($LN_2$) taking into consideration for application of high $T_c$ superconductor is very important. Also $LN_2$ will be used as both coolant and insulator in superconducting generator. In this paper, we investigated ac breakdown characteristics of cryogenic nitrogen gas above a $LN_2$ for rod-to plane electrode configuration. As result the breakdown mechanism of $LN_2$is dependence on bubble effect. And breakdown voltage is a ratio on bubble s size but electrodes arrangement is to make no difference. The breakdown voltage decreases slightly with increasing flow velocity, it again decreases abruptly with increasing flow velocity. These results were interpreted as the within pressure of rod electrode and Maxwell force.

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Evaluation of the Cochlear Electrode Behavior in the 3D Human Cochlea Model by FEM Analysis (3차원 달팽이관 모델에서의 인공와우 전극의 거동에 대한 유한요소해석)

  • 임윤섭;박세익;김용협;오승하;김성준
    • Journal of Biomedical Engineering Research
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    • v.25 no.3
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    • pp.207-215
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    • 2004
  • A finite element analysis is used in this study to model 6 kinds of electrode by a genetic program in order to evaluate the mechanical effect on the 3D human cochlea model and the behavior of electrode. Human cochlea is modeled by the spiral-approximation method and the shape of scala tympani is extracted from the mid section of the human cochlea. Contact pressure at the tip and the insertion force are found to be highest when the wires stack horizontally. Axial rotation of electrode is minimal comparing with the stimulating current spread. The results indicate that the electrode stiffness is important to minimize the trauma.

Gate Leakage Current Characteristics of GaAs MESFETs with Different Temperature (GaAs MESFET의 온도변화에 대한 게이트누설전류 특성)

  • Won, Chang-Sub;Hong, Jea-Il
    • Proceedings of the KIEE Conference
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    • 2003.07e
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    • pp.24-27
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    • 2003
  • In this paper, We make experiment on two methode for GaAs MESFET with temperature variation. One method, we mesure gate leakage current at open source electrode. another we mesure gate leakage current at short source electrode. The difference of two current has been tested and provide that the existence of another source to Schottky barrier height against the image force lowering effect.

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