• ETRI Journal
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• v.27 no.1
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• pp.95-101
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• 2005

Waveguide structures of the stand-alone electroabsorption (EA) modulator and the electroabsorption modulated laser (EML) are investigated using the 3D beam propagation method. The EA waveguide structures with InP-based passivation layers show saturation in the extinction ratio (ER) due to the stray light traveling through the passivation layers. This paper demonstrates that narrower passivation layers suppress stray-light excitation in the EA waveguide, increasing the ER. A taper structure in the isolation section of the EML waveguide can reduce the mode mismatch and suppress the excitation of the stray light, increasing the ER further. Low-index-polymer passivation layers can confine the mode more tightly in the active waveguide, yielding an even higher ER.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.28-36
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• 1998

Widely tunable diodes integrated with periodically sampled and chirped DBR(distributed Bragg reflector) and an EA(electroabsorption) modulator are analyzed dynamically using the improved largesinal time-domain model. The tuning characteristics of sampled- and chirped-grating DBR laser diodes are demonstrated theoretically. The results of the simulation agree well with those of the experiment. And the intensity-modulation properties of the laser diodes integrated with an EA modulator are calculated. It is shown that the external modulation has the lower frequency chirp by 1/20 for the same extinction ratio than the direct modulation, and also the short pulse train can be generated using the optical gating of an EA modulator.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.46-46
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• 1997

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.