• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.38-43
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• 2003

Fabrication process of strain-induced channel waveguides in $LiNbO_3$ was developed using strain-optic effect and compressional strain due to ~1.4 $\mu\textrm{m}$ surface Mo/Pt metal film. Characterization of the channel waveguides revealed a single transverse and depth mode in both TE and TM polarizations. Measurements showed total insertion loss of 6.2 and 7.7 ㏈/cm for TM and TE polarizations. respectively. Electro-optic intensity modulators with 11 mm long electrode length and 21 $\mu\textrm{m}$ electrode gap at $\lambda$ = 1.15 ${\mu}{\textrm}{m}$have been produced in $LiNbO_3$ substrates using strain-induced channel waveguides. Modulation depth of 100% at $\pi$-radian voltage of 16.1V has been demonstrated. Also, 1$\times$2 on/off power splitters at $\lambda$ = 0.63 $\mu\textrm{m}$ have been produced using strain-induced channel waveguides. On/off voltage of $\pm$ 25V has been demonstrated.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.252-257
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• 1997

Organic EL devices, which have the sing3e-layer structure of ITO(indium-tin-oxide) /PPV(poly(p-phenylene vinylene))/cathode and the double-layer structure of ITO/PVK (poly(N- vinylcarbazole)) /PPV/cathode, were fabricated and their electro-optical properties were investigated. Experimental results, in single-layer structure, shown that the increment of temperature for thermal conversion of PPV film from $140^{\circ}C$ to $260^{\circ}C$ decreases the maximum luminance from $118.8\;cd/m^{2}$(20V) to $21.14\;cd/m^{2}$(28V) and shift the maximum peak of EL spectrum from 500nm to 580nm. The lower the work function of cathode is, the more the luminance and injection current of device. In double-layer structure, as the concentration of PVK solution decreases from 0.5 wt% to 0.05 wt%, the luminance of device increases from $70.71\;cd/m^{2}$(32V) to $152.7\;cd/m^{2}$(26V).

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.46-49
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• 2011

Bi co-doped ZnS:Mn,Bi yellow phosphors for white light emitting diodes were prepared by the conventional solidstate reaction method. The optical and structural properties of ZnS:Mn,Bi phosphors were investigated by x-ray diffraction, scanning electro microscopy and photoluminescence. ZnS:Mn,Bi phosphors showed XRD patterns of hexagonal structure. The photoluminescence of ZnS:Mn,Bi phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn,Bi phosphors was associated with the 4T1 ${\rightarrow}$ 6A1 transition of the Mn2+ ions. The highest photoluminescent intensity of the phosphors under 405 nm and 450 nm excitation was obtained at Bi concentration of 7mol%. The optimum mixing conditions with epoxy and yellow phosphor for white light emitting diodes were observed in a ratio of epoxy:yellow phosphor of 1:3.5. The CIE chromaticity of the white LED at the 1:3.5 ratio was X = 0.3454 and Y = 0.2449.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.528-531
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• 2000

Deposition of PZT with UV laser ablatio was applied for realization of thin film sensors and actuators. Deposition rate of more than 20nm/min was attained by pulsed KrF excimer laser deposition, which is fairly better than those obtained by the other methods. Perovskite phase was obtained at room temperature deposition with Fast Atom Beam(FAB) treatment and annealing. Smart MEMS(Micro electro-mechanical system) is now a suject of interest in the field of micro optical devices, micro pumps, AFM cantilever devices etc. It can be fabricated by deposition of PZT thin films and micromachining. PZT films of more than 1 micron thickness is difficult to obtain by conventional methods. This is the reason why we applied excimer laser ablation for thin film deposition. The remanent polarization Pr of 700nm PZT thin film was measured, and the relative dielectric constant was determined to about 900 and the dielectric loss tangent was also measured to be about 0.04. XRD analysis shows that, after annealing at 650 degrees C in 1 hour, the perovskite structure would be formed with some amount of pyrochlore phase, as is the case of the annealing at 750 degrees C in 1 hour.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1430-1431
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• 2011

To develope the transparent conducting oxide(TCO) films is one of the essential technologies to improve various properties of electro-optical devices such as dye-sensitized solar cells(DSCs). ITiO thin film is considered one of the candidates as TCO electrodes of DSCs because it shows many advantages such as the high transparency in long wavelength range above 700nm and excellent properties of electrical necking between nanoporous TiO2 and ITiO transparent electrode. This paper presents the effect of sputtering processes on the structural, electrical and optical properties of ITiO thin film deposited by r.f. magnetron sputtering. The effect of doping concentration of Ti on the chemical compounds and C axis-orientation properties of were mainly studied experimentally. The morphology and electrical properties were greatly influenced by deposition processes, especially by the doping concentration of Ti. The $3.8{\times}10^{-4}{\Omega}{\cdot}cm$ of minimum volume resistivity were obtained under the experimental conditions of gas pressure 7mTorr, substrate temperature $300^{\circ}C$, and 2.5% of Ti doping concentration.

• Journal of the Korean Applied Science and Technology
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• v.13 no.2
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• pp.29-37
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• 1996

The phase separated structure and the electo-optical properties of the polymer /liquid crystal(LC) composite films including a dye were investigated. The phase separated structure of the polymer /LC / dye composite film(GH composite film) including below 2wt% dye against LC was almost same with the composite film which does not include dye. But the electro-optical properties of the GH composite film strongly depended on weight fraction of the dye against the LC. The response time of the GH composite film increased with the increase of the dissolved dye in LC because the dye acts as a registivity for the orientation of LC molecules by the electric filed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.33-40
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• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.368-368
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• 2007

Zinc oxide (ZnO) has drawn much interest as a potential transparent conducting oxide (TCO) for applying to solar cell and front electrode of electro-luminescent devices. For the enhancement of electrical property of TCOs, dopant introduction and hybridization with conductive nanoparticles have been investigated. In this work, ZnO films were formed on glass substrate by using photochemical solution deposition of Ag nanoparticles dispersed or various metal (Ag, Cd, In, or Sn) contained photosensitive ZnO solutions. The usage of photosensitive solution permits us to obtain a micron-sized direct patterning of ZnO film without using conventional dry etching procedure. The structural, optical, and electrical characteristics of ZnO films with the introduction of metal dopants with/without Ag nanoparticles have been investigated to check whether there is a combined effect between metal dopants and Ag nanoparticles on the characteristics of ZnO film. The phase formation and crystallinity of ZnO film were monitored with X-ray diffractometer. The optical transmittance measurement was carried out using UV-VIS-NIR spectrometer and the electrical properties such as sheet resistance and conductivity were observed by using four-point probe.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.498-503
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• 2003

We analyze the electro-optic polarization transmission characteristics of liquid crystal cells in the Poincare sphere representation. We determine fundamental conditions on maximizing of brightness and contrast ratio of liquid crystal display devices for polychromatic light by use of retardation films. For optimizing two colors, at least two properly designed retardation films are needed, and for three wavelengths, either it can be approximated to the two-color case or three retardation films are needed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.10
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• pp.830-839
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• 1991

The correlation between electrical (derivativer) characteristics and electro-optical conversion characteristics of laser diodes has been investigated both theoretically and experimentally with emphasis on the nonideal behavior. Laser diodes are electrically pumped devices with the current resulting from the carrier recombination dynamics, and their junction voltage is given by the separation of the quasi-Fermi levels which are determined by the injected carrier concentration. Thus most of the informaiton related to laser diode operation characteristics is reveraled in the electrical characteristics which are relatively simple to measure with sufficient accuracy. Therefore the measurement of electrical characteristics and their derivatives is a very useful tool of laser diode characteristion.