• Asian Journal of Atmospheric Environment
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• 제2권2호
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• pp.75-80
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• 2008

A new-type apparatus decomposing volatile organic compounds (VOCs) using a combination system of an electrical exothermic SiC honeycomb and a catalytic filter was developed. This linear combination system is very useful to the catalytic decomposition of VOCs, because the gas involving VOCs is well heated in the SiC honeycomb and then flows into the catalytic filter. In the proposed apparatus, the outlet gas temperatures of SiC honeycomb maintained at ca. $300^{\circ}C$ after 5 min from the starting of applying electric current, and sufficient for the catalytic degradation of VOC components, i.e. toluene, isopropanol, methyl ethyl ketone and ethyl acetate. The average decomposition rate of total VOCs exhausted from a printing factory was 85% using pt catalyst at SV=19,000 in this system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.152-152
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• 2013

Mechanism of energy conversion from chemical to electrical during exothermic catalytic reactions at the metal surfaces has been a fascinating and crucial subject in heterogeneous catalysis. A metal-semiconductor Schottky nanodiode is novel device for direct detection of chemically induced hot electrons which have sufficient energy to surmount the Schottky barrier. We measured a continuous chemicurrent during the hydrogen oxidation under of 760 Torr of O2 and 6 Torr of H2 by using Pt/Si and Pt/TiO2 nanodiodes at reaction temperatures and compared the chemicurrent with the reaction turnover rate. The thermoelectric current was measured by carrying out an experiment under O2 condition for elimination of the background current. Gas chromatograph and source meter were used for measurement of the chemical turnover rate and the chemicurrent, respectively. The correlation between the chemicurrent and the chemical turnover rate under hydrogen oxidation implies how hot electrons generated on the metal surface affect hydrogen oxidation.

• 전기전자학회논문지
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• 제26권4호
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• pp.537-544
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• 2022

본 논문은 최근 전자전, 레이더, 기지국 및 위성통신분야에서 각광받고 있는 GaN HEMT(Gallium Nitride High Electron Mobility Transistor) die를 이용한 고출력증폭기의 제작에 사용되는 본드 와이어의 용융단선 현상과 원인을 분석하였다. 고출력증폭기의 주요 성능인 최대 출력전력을 얻기 위해서는 최적의 임피던스 정합이 필요하고 정격전류뿐만 아니라 과도전류에 대한 발열을 고려하여 본드 와이어 소재에 부합하는 직경과 가닥수가 정해져야 한다. 특히, GaN과 같이 에너지 밴드 갭이 넓은 화합물반도체는 설계효율이 낮거나 방열이 부족하면 열 저항 증가로 인해 본드 와이어의 용융단선을 촉발하는 현상을 확인하였다. 본 자료는 발열조건에 대한 모의시험을 수행하고, IR현미경 측정을 통한 검증으로 GaN소자를 이용한 응용분야에 참고자료로 활용이 기대된다.