• Asian Journal of Atmospheric Environment
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• v.2 no.2
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• pp.75-80
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• 2008

A new-type apparatus decomposing volatile organic compounds (VOCs) using a combination system of an electrical exothermic SiC honeycomb and a catalytic filter was developed. This linear combination system is very useful to the catalytic decomposition of VOCs, because the gas involving VOCs is well heated in the SiC honeycomb and then flows into the catalytic filter. In the proposed apparatus, the outlet gas temperatures of SiC honeycomb maintained at ca. $300^{\circ}C$ after 5 min from the starting of applying electric current, and sufficient for the catalytic degradation of VOC components, i.e. toluene, isopropanol, methyl ethyl ketone and ethyl acetate. The average decomposition rate of total VOCs exhausted from a printing factory was 85% using pt catalyst at SV=19,000 in this system.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.152-152
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• 2013

Mechanism of energy conversion from chemical to electrical during exothermic catalytic reactions at the metal surfaces has been a fascinating and crucial subject in heterogeneous catalysis. A metal-semiconductor Schottky nanodiode is novel device for direct detection of chemically induced hot electrons which have sufficient energy to surmount the Schottky barrier. We measured a continuous chemicurrent during the hydrogen oxidation under of 760 Torr of O2 and 6 Torr of H2 by using Pt/Si and Pt/TiO2 nanodiodes at reaction temperatures and compared the chemicurrent with the reaction turnover rate. The thermoelectric current was measured by carrying out an experiment under O2 condition for elimination of the background current. Gas chromatograph and source meter were used for measurement of the chemical turnover rate and the chemicurrent, respectively. The correlation between the chemicurrent and the chemical turnover rate under hydrogen oxidation implies how hot electrons generated on the metal surface affect hydrogen oxidation.

• Journal of IKEEE
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• v.26 no.4
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• pp.537-544
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• 2022

This paper analyzes the occurrence and cause of bond wires fusing used in the manufacture of pulsed high power amplifiers. Recently GaN HEMT has been spotlight in the fields of electronic warfare, radar, base station and satellite communication. In order to produce the maximum output power, which is the main performance of the high-power amplifier, optimal impedance matching is required. And the material, diameter and number of bond wires must be determined in consideration of not only the rated current but also the heat generated by the transient current. In particular, it was confirmed that compound semiconductor with a wide energy band gap such as GaN trigger fusing of the bond wire due to an increase in thermal resistance when the design efficiency is low or the heat dissipation is insufficient. This data has been simulated for exothermic conditions, and it is expected to be used as a reference for applications using GaN devices as verified through IR microscope.