• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Korean Journal of Remote Sensing
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• v.36 no.6_3
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• pp.1669-1679
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• 2020

This study examines the washing effect of precipitation on particulate matter (PM) and the rainwater quality (pH, electrical conductivity (EC), water-soluble ions concentration). Of six rain events in total, rainwater samples were continuously collected every 50 mL from the beginning of the precipitation using rainwater collecting devices at Pukyong National University, Busan, South Korea, from March 2020 to July 2020. The collected rainwater samples were analyzed for pH, EC, and water-soluble ions (cations: Na+, Mg2+, K+, Ca2+, NH4+, and anions: Cl-, NO3-, SO42-). The concentrations of particulate matter were continuously measured during precipitation events with a custom-built PM sensor node. For initial rainwater samples, the average pH and EC were approximately 4.3 and 81.9 μS/cm, and the major ionic components consisted of NO3- (5.4 mg/L), Ca2+ (4.2 mg/L), Cl- (4.1 mg/L). In all rainfall events, rainwater pH gradually increased with rainfall duration, whereas EC gradually decreased due to the washing effect. When the rainfall intensities were relatively weak (<5 mm/h), PM10 reduction efficiencies were less than 40%. When the rainfall intensities were enhanced to more than 7.5 mm/h, the reduction efficiencies reached more than 60%. For heavy rainfall events, the acidity and EC, as well as ions concentrations of initial rainwater samples, were higher than those in later samples. This appears to be related to the washing effect of precipitation on PM10 in the atmosphere.

• Korean Journal of Environmental Agriculture
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• v.27 no.3
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• pp.225-230
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• 2008

Objective of this study was to access the environmental impacts of the use of discharge water from municipal waste water treatment plant as alternative irrigation resources during drought season for rice cultivation. For the field experiments, it was observed that plant growth and yield characteristics at 20 days of alternative irrigation period with application of FAST (fertilizer application based on soil test) 50% were relatively the same as the control. For the surface water quality, it appeared that $EC_i$ (electrical conductivity of irrigation water) and SAR (sodium adsorption ratio) values of DMWT (discharge waters from municipal wastewater treatment plant) irrigation were twofold higher than those of ground water irrigation as the control regardless of fertilization levels. For the irrigation periods, there were not significantly difference between 10 and 20 days of treatments, but $EC_i$ and SAR values of surface water were highest at 30 days of irrigation periods at initial rice growing stages. Generally, $EC_i$ values of percolation water in all the treatments were gradually increasing until 30days after irrigation, and then decreasing to harvest stage. Overall, it might be considered that there was possibility to irrigate DMWT with application of FAST 50% for 20 days of drought periods at rice transplanting season. Furthermore, efficiency rate of alternative irrigation water for 20 days of drought period was 32.7% relative to the total annual irrigation water for rice cultivation.

• Korean Journal of Soil Science and Fertilizer
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• v.37 no.2
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• pp.74-82
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• 2004

This study was conducted to estimate the optimum application rate of fertilizer N based on $NO_3-N$ concentration in soils for tomato (Lycopersicon esculentum Mill.) cultivation in plastic film house. Tomato plants were cultivated with and without fertilizer in twelve soils which have different concentrations of $NO_3-N$ ranging from 46 to $344mg\;kg^{-1}$. Dry weight (DW) of above-ground part of tomato with no fertilizer ranged from 28.9 to $112.5g\;plant^{-1}$, depending on N-supplying capability of soils. The soil $NO_3-N$ was positively correlated with DW ($r=0.83^{**}$) and N uptake ($r=0.78^{**}$) by tomatoes in no fertilizer treatment, and negatively correlated with fertilizer effciencies resulted from the differences of DW and N uptake between fertilized and non-fertilized plot. The relationships between soil $NO_3-N$ concentration and DW, N uptake, and fertilizer efficiency were analyzed to determine the critical levels of soil $NO_3-N$ for tomato cultivation. The limit critical levels of soil $NO_3-N$ were estimated to be more than $280mg\;kg^{-1}$ for no application of fertilizer N and to be less than $50mg\;kg^{-1}$ for recommended application of fertilizer N. These critical levels of soil $NO_3-N$ were nearly the same as those calculated from regression equation between electrical conductivity(EC) and soil nitrate for critical levels of EC in recommendation equation of fertilizer N for tomato under the plastic film house by NationaI Institute of Agricultural Science and Technology. Consequently, the optimal application rate of ferdilizer N for tomato cultivation in the soils containing $NO_3-N$ concentration between $280mg\;kg^{-1}$ and $50mg\;kg^{-1}$ was estimated by the equation Y = -0.4348X＋121.74, where Y is the percent(%) to the recommended application rate of N fertilizer and X is the soil $NO_3-N$ concentration ($mg\;kg^{-1}$).

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.3
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• pp.3-9
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• 2017

Recently, in 3rd Generation Partnership Project(3GPP), there is a study of the Long Term Evolution(LTE) based vehicle communication which has been actively conducted to provide a transport efficiency, telematics and infortainment. Because the vehicle communication is closely related to the safety, it requires a reliable communication. Because vehicle speed is very fast, unlike the movement of the user, radio channel is rapidly changed and generate a number of problems such as transmission quality degradation. Therefore, we have to continuously updates the channel estimates. There are five types of conventional channel estimation scheme. Least Square(LS) is obtained by pilot symbol which is known to transmitter and receiver. Decision Directed Channel Estimation(DDCE) scheme uses the data signal for channel estimation. Constructed Data Pilot(CDP) scheme uses the correlation characteristic between adjacent two data symbols. Spectral Temporal Averaging(STA) scheme uses the frequency-time domain average of the channel. Smoothing scheme reduces the peak error value of data decision. In this paper, we propose the novel channel estimation scheme in LTE based Vehicle-to-Vehicle(V2V) environment. In our Hybrid Reliable Channel Estimation(HRCE) scheme, DDCE and Smoothing schemes are combined and finally the Linear Minimum Mean Square Error(LMMSE) scheme is applied to minimize the channel estimation error. Therefore it is possible to detect the reliable data. In simulation results, overall performance can be improved in terms of Normalized Mean Square Error(NMSE) and Bit Error Rate(BER).

• Journal of the Korean Society of Radiology
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• v.5 no.2
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• pp.93-96
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• 2011

Currently, the development of direct conversion radiation detector using photoconductor materials is progressing in widely. Among of theses photoconductor materials, mercuric iodide compound than amorphous selenium has excellent absorption and sensitivity of high energy radiation. Also, the detection efficiency of signal generated in photoconductor film varies by electric filed and geometric distribution according to top-bottom electrode size. Therefore, in this work, the x-ray detection characteristics are investigated about the size of top electrode in $HgI_2$ photoconductor film. For sample fabrication, to solve the problem that is difficult to make a large area film, we used the spatial paste screen-print method. And the sample thickness is $150{\mu}m$ and an film area size is $3cm{\times}3cm$ on ITO-coated glass substrate. ITO(Indium-Tin-Oxide) electrode was used as top electrode using a magnetron sputtering system and each area is $3cm{\times}3cm$, $2cm{\times}2cm$ and $1cm{\times}1cm$. From experimental measurement, the dark current, sensitivity and SNR of the $HgI_2$ film are obtained from I-V test. From the experimental results, it shows that the sensitivity increases in accordance with the area of the electrode but the SNR is decreased because of the high dark current. Therefore, the optimized size of electrode is importance for the development of photoconductor based x-ray imaging detector.

• The Korean Journal of Pharmacology
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• v.14 no.1_2
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• pp.33-40
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• 1978

1) The authors studied the effect of increasing age on the contraction and relaxation mechanism in the ureteral smooth muscle of the guinea pig. 2) Two to three week old, three month old, and two to three year old guinea pig ureters were used and the consistent amplitude of contratile responses were induced by using train stimulation. 3) After mounting the specimens in Tyrode's solution containing 2.6mM $Ca^{++}$, the ureter was stimulated, of which amplitude was initial contraction and next continuously superfused with $Ca^{++}$-free Tyrod's solution. When the contractile response stopped by electrical field stimulation, the muscle specimens was superfused with Tyrode's solution 0.25mM $Ca^{++}$ for 15min and stimulated with the same parameters. Thereafter, the contraction of $Ca^{++}$ in the solution was increased step by step up to 2.7mM. 4) The ureters of 2-3 week old guinea pigs needed less $Ca^{++}$ for the recovery of contractile response than those of three month and two to three year old did. In 2.7mM $Ca^{++}$, the ureters of 2-3 week and 3 month old guinea pigs recovered the contractile response of over 90% but those of 2-3 year old recovered the contractility of 77.2%. 5) Isoproterenol inhibited in dose dependent manner from $10^{-7}$ to $10^{-5}\;M$ ureteral contractility of both 2-3 week and 2-3 year old guinea pigs. The inhibition of the old ureter by isoproterenol was significantly less (P<0.025) than that of the younger ureter. However theophylline showed the strong inhibition independent of the function of age. 6) Dibutyryl cyclic AMP showed dose-dependent inhibition of the contraction of ureters of 2-3 week old guinea pigs but there was shown no inhibition in the old ureters. Further, the content of endogenous cyclic AMP in the two week old ureter was higher by 73% than that of 17 month old ureter. Cyclic GMP contents was not much different between two groups. 7) The ureteral smooth muscle of the younger guinea pig had more efficiency than that of the older animals in the mobilization and storage of calcium which concerned itself in the contraction and relaxation mechanism.

• Journal of Korean Society of Environmental Engineers
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• v.39 no.1
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• pp.9-18
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• 2017

Arsenic (As) has been considered as the most toxic one among various hazardous materials and As contamination can be caused naturally and anthropogenically. Major forms of arsenic in groundwater are arsenite [(As(III)] and/or arsenate [(As(V)], depending on redox condition: arsenite and arsenate are predominant in reduced and oxidized environments, respectively. Because arsenite is much more toxic and mobile than arsenate, there have been a number of studies on the reduction of its toxicity through oxidation of As(III) to As(V). This study was initiated to develop photocatalytic oxidation process for treatment of groundwater contaminated with arsenite. The performance of two types of light sources (UV lamp and UV LED) was compared and the feasibility of goethite as a photocatalyst was evaluated. The highest removal efficiency of the process was achieved at a goethite dose of 0.05 g/L. Based on the comparison of oxidation efficiencies of arsenite between two light sources, the apparent performance of UV LED was inferior to that of UV lamp. However, when the results were appraised on the basis of their emitting UV irradiation, the higher performance was achieved by UV LED than by UV lamp. This study demonstrates that environmentally friendly process of goethite-catalytic photo-oxidation without any addition of foreign catalyst is feasible for the reduction of arsenite in groundwater containing naturally-occurring goethite. In addition, this study confirms that UV LED can be used in the photo-oxidation of arsenite as an alternative light source of UV lamp to remedy the drawbacks of UV lamp, such as long stabilization time, high electrical power consumption, short lifespan, and high heat output requiring large cooling facilities.