• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.718-723
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• 2010

In this paper, the following results were obtained from the experiment in which electrification voltage of silicone rubber specimen for thermal bonding were measured under various time, temperature ($10{\sim}40^{\circ}C$), and humidity (30~90%) conditions and different amount of carbon additives (0~15 phr (per hundred resin)). Electrostatics electrification voltage decreased when carbon is up to 10 phr, and there was no electrification voltage in 15 phr condition. The electrostatics electrification voltage did not change over time. When the temperature was constant, electrostatics electrification voltage sharply dropped when the humidity was around 70%. That means, this condition might be appropriate for prevention of charging. The electrification voltage decreased as humidity and amount of carbon increased.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.315-318
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• 2005

The effect of plasma cleaning was examined on package delamination phenomena in the integrated circuit (IC) packaging process. Without plasma cleaning, delamination was observed for all three experimental treatments applied after the packaging step, which include bake of If, reflow, and bake of If followed by reflow However, no delamination was observed when the plasma cleaning was performed before and after the wire bonding step. Plasma cleaning was found to be a critical step to improve the reliability of the package by reducing the possibility of contact failure between die pad and bonding wire.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.779-784
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• 2001

In this work, we studied the characteristics of nitride films for the optimization of PMD(pro-metal dielectric) linear process, which can be applied to the recent semiconductor manufacturing process. We split the deposit condition of nitride films into four parts such as PO(protect overcoat) nitride, baseline, low hydrogen and high stress and low hydrogen, respectively. We tried to find out correlation between BPSG deposition and densification. In order to analyze the changes of Si-H and Si-NH-Si bonding density, we used FTIR area method. We also investigated the crack generation on wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation to judge whether the deposited films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.81-84
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• 1995

A reliable bonding between two silicon wafers, regularly grooved and non-grooved, was done by the direct boning technology, It is Presented that high structural duality was realized not only at the bended interface but in the bulk, commensurate with the filling of artificial grooves, which would be attributed to the dislocation-gettering capability of groove free-surfaces during annealing. The groove filling would be explained with mass-transport phenomena assisted by the dislocation movement from initial contact boundaries toward groove surfaces. Intrinsic voids can be easily removed by aid of the grooves. The proposed method yielded also an intimate bonding not only between {111} wafers strongly misoriented and slightly inclined to {111} basal plane but even between {111} and {100} orientation wafers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.382-383
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• 2006

본 연구에서는 열처리 본딩장비를 실제로 개발하여 Al/Sus와 Al/Al의 두 재료를 서로 본딩 하였다. 열처리 본딩 실험을 하기 위해서 열처리시에 온도분포를 정확히 파악하기 위해서 컴퓨터모의실험으로 같은 재료인 Al/Al과 서로 다른 재료인 Al/Sus의 온도분포를 나타내었다. 본딩된 두 가지의 sample들을 FESEM으로 접합부의 표면조직 상태를 측정하였고 인장력측정 장치로 bonding strength를 측정하였다. 접착제를 사용한 본딩 sample 보다는 더 본딩 결합력이 크다는 것을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.256-258
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• 2003

Two Si wafers are bonded with indium-silver alloy using diffusion bonding method. When silver and indium thin films are contacted, they diffuse into each other and form inter-metallic compounds like $AgIn_2$, $Ag_2In$, $Ag_3In$ etc. These compounds are determined by ratio of two metals. From phase diagram of Ag-In alloy, we can get the ratio of $Ag_2In$, that has high melting point about 700$^{\circ}C$, approximately 2:1. This ratio was made by controlling of film thickness. And bonding was executed by annealing and adding pressures at a time. The joint of these wafers had been observed by SEM. And we had also seen the EDS (Energy Dispersive Spectroscopy) data to analysis the component of samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.103-106
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• 1999

In this paper, we suggest the FED packaging technology that have 4mm thickness, using sodalime glass-to-sodalime glass electrostatic bonding. It based on conventional silicon-glass bonding. The silicon film was deposited an around the exhausting hole on FED backside panel. And then, the silicon film of panel was successfully bonded with capping(bare) glass in vacuum environment and the FED panel was vacuum-sealed. In this method, we could achieve more 153 times increased conductance and 200 times increased vacuum efficiency than conventional tube packaging method. The vacuum level in panel, by SRG test, was maintained about low 10$_{-4}$ Torr during above two months And, the light emission was observed to 0.7-inch tubeless packaged FED. Then anode current was 34 $\mu$ A. Emission stability was constantly measured for 10 days.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.815-819
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• 1998

The silicon-nirtide membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PRO($PbTiO_3$ ) layer for a IR detection was coated on the membrane and its characteristics were measured. The a attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer were eliminated through the method of bonding/etching of silicon wafer. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by the PTO layer were measured, too.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.4
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• pp.444-450
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• 2008

There are several ways to bond to building grounding systems for reducing GPR(ground potential rise) and EMI resulting from power system faults or lightning stroke to building. In order to verify effective bonding practice, the GPR and voltage of equipment due to the direct stroke to building are calculated with ATP-EMTP model for transformer, transmission line and MOV(Metal oxide varistor). The simulated model shows a satisfactory accuracy compared with experimental result for the $8/20{\mu}s$ simulated current pulse. It is observed that separate grounding can cause dangerous voltage to the building equipment and the performance of surge protective device can improve when it is installed to the protected equipment in distance as short as possible.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.297-299
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• 2003

In this paper, we present the fabrication of copper electrode array and test of electrochemical discharge machining for the fabrication of microholes on Borofloat33 glass. Copper electrode array is fabricated by the bonding of silicon upper substrate and lower substrate and copper electroplate. The silicon upper electrode having microholes fabricated by ICP-RIE is the mold of copper electroplate. The lower substrate is used as the seed layer for copper electroplate after Au - Au thermocompression bonding with the upper substrate.