• Computers and Concrete
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• 제12권3호
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• pp.337-349
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• 2013

Traditional concrete is effectively an insulator in the dry state. However, conductive concrete can attain relatively high conductivity by adding a certain amount of electronically conductive components in the regular concrete matrix. The main purpose of this study is to investigate the electrical and thermal properties of conductive concrete with various graphite contents, specimen dimensions and applied voltages. For this purpose, six different mixtures (the control mixtures and five conductive mixtures with steel fibers of 2% by weight of coarse aggregate and graphite as fine aggregate replacement at the levels of 0%, 5%, 10%, 15% and 20% by weight) were prepared and concrete blocks with two types of dimensions were fabricated. Four test voltage levels, 48 V, 60 V, 110 V, and 220 V, were applied for the electrical and thermal tests. Test results show that the compressive strength of specimens decreases as the amount of graphite increases in concrete. The rising applied voltage decreases electrical resistivity and increases heat of concrete. Meanwhile, higher electrical current and temperature have been obtained in small size specimens than the comparable large size specimens. From the results, it can be concluded that the graphite contents, applied voltage levels, and the specimen dimensions play important roles in electrical and thermal properties of concrete. In addition, the superior electrical and thermal properties have been obtained in the mixture adding 2% steel fibers and 10% graphite.

• 폴리머
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• 제37권6호
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• pp.722-729
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• 2013

Poly(dimethyl siloxane)(PDMS, 실리콘 고무)의 열전도도 향상을 위하여 보론 나이트라이드과 탄소나노튜브를 열전도성 충전제로 사용하였다. 보론 나이트라이드의 함량은 0에서 100 phr로 증가시켰으며, 탄소나노튜브의 함량은 보론 나이트라이드의 함량을 100 phr로 고정시킨 상태에서 0에서 4 phr로 증가시켰다. 실리콘 고무 복합재료의 열전도도는 보론 나이트라이드 함량의 증가에 따라 증가하였으나, 탄소나노튜브를 추가로 첨가하더라도 열전도도 향상에 대한 효과는 미미하였다. 100 phr 함량의 보론 나이트라이드 함량에 탄소나노튜브를 충전 시 복합재료의 열분해가 가속화되는 예상치 못한 결과를 얻었다. 이를 해석하기 위하여 Horowitz-Metzger 방법을 이용하여 열분해 활성화 에너지를 계산하였다. 또한 보론 나이트라이드/탄소나노튜브가 충전된 실리콘 고무 복합재료의 경화거동, 전기저항 및 기계적 물성을 연구하였다.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• 대한전기학회논문지
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• 제41권9호
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• pp.1013-1020
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• 1992

The conductivity variation of a high resistivity bulk silicon semiconductor, whose electrodes were deposited with aluminum vapor, was studied experimentally by measuring the X-ray intensity and current flow, which was developed by X-ray radiation while applying a pulse voltage to the silicon, in a load resistor connected to the semiconductor. The current flow observed immediately as the X-ray radiated, and when the X-ray decreased. It was found from the observation of switching current for the X-ray intensity and the voltage applied in the semiconductor that the switching current of the semiconductor increased as the intensity of the X-ray and the applied voltage increased. In case of lower applied voltage, the switching current for higher applied voltage depended on the intensity of the X-ray radiated due to the saturation of electron and hole.

• 한국세라믹학회지
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• 제35권9호
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• pp.995-1001
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• 1998

As a basic study for cathode materials of {{{{ { {LiMn }_{2 }O }_{4 } }}-based lithium-ion secondary batteries Li({{{{ { { { {Mn }_{1-$\delta$ }Nb }_{$\delta$} )}_{2 }O }_{4 } }} ($\delta$=0.05, 0.1, 0.2) materials which Nb is substituted for Mn were synthesized by the solid state reaction at 80$0^{\circ}C$ and 110$0^{\circ}C$ respectively. The second phase {{{{ { LiNbO}_{3 } }} appeared above $\delta$=0.1 As the result of im-pedance analysis as the amount of substituted Nb increased the resistivity of grain boundary increased greatly. Compared to undoped-{{{{ { {LiMn }_{2 }O }_{4 } }} the electrical conductivity of Li({{{{ { { { {Mn }_{1-$\delta$ }Nb }_{$\delta$} )}_{2 }O }_{4 } }} decreased slightly but is charging capacity and potential plateau increased.

• 전기학회논문지
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• 제61권4호
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• pp.590-594
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• 2012

ZnO nanowires were fabricated by hydrothermal synthesis technique for field emission device application. Al-doped zinc oxide (AZO) thin films were prepared as seed layer of catalyst for the ZnO nanowire synthesis, for which conductivity of the seed layer was tried to be improved for enhancing the field emission property of the ZnO nanowire. The AZO seed layer revealed specific resistivity of $ 7.466{\times}10^{-4}[{\Omega}{\cdot}cm]$ and carrier mobility of 18.6[$cm^2$/Vs]. Additionally, upper tip of the prepared ZnO nanowires was treated by hydrochloric acid (HCl) to form a nanocone shape of ZnO nanowire, which was aimed for enhanced focusing of electric field on that and resultingly to improve field emission property of the ZnO nanowires. The ZnO nanowire with nanocone shape revealed decreased threshold electric field and increased current density than those of the simple ZnO nanowires.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.223-226
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• 1998

Organic conducting N-methyl phenazinium TCNQ (7,7,8,8-tetracyanoquinonedimethane) ion radical salt was synthesized and characterized by FTIR, EA. After blending this material with PMMA using NMP/DMF, the solution was bar-coated on a PET film and dried at 40$^{\circ}C$. The optical micrograph showed the fibril crystals. The surface resistivity was 10$\^$5/ $\Omega$/$\square$. The conductivity decreased considerably at temperatures above 80$^{\circ}C$, although it decreased slightly at RT and 4$^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 학술대회 논문집 전문대학교육위원
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• pp.134-136
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• 2004

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686 A, b = 9.0425 ${{\AA}}$, c = 8.0065 ${{\AA}}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.79-81
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• 1996

We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1407-1409
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• 2003

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686, b=9.0425, c=8.0065. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}cm$ and electron mobility was $-5.4810^{3}cm^{2}$/Vsec at room temperature(RT).