• Title/Summary/Keyword: Electrical Bonding

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Synthesis and Crystal Structure of a New Pentanary Thiophosphate, K0.5Ag0.5Nb2PS10

  • Dong, Yong-Kwan;Kim, Sang-Rok;Yun, Ho-Seop;Lim, Han-Jo
    • Bulletin of the Korean Chemical Society
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    • v.26 no.2
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    • pp.309-311
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    • 2005
  • Single crystals of the new pentanary thiophosphate, $K_{0.5}Ag_{0.5}Nb_2PS_{10}$ has been prepared through reactions of the elements with halide fluxes. The structure of $K_{0.5}Ag_{0.5}Nb_2PS_{10}$ has been analyzed by single crystal X-ray diffraction technique. The structure of $K_{0.5}Ag_{0.5}Nb_2PS_{10}$ is made up of one-dimensional ${^{\infty}_1}[Nb_2PS_{10}]$ chains along the [001] direction and these chains are separated from one another by $Ag^+$ and disordered $K^+$ ions. This chain is basically built up from bicapped trigonal prismatic [Nb2S12] units and tetrahedral [PS4] groups. The [$Nb_2S_{12}$] units are connected together to form the linear chain, ${^{\infty}_1}[Nb_2S_9]$ by sharing the S-S prism edge. Short (2.885(2) $\AA$ or 2.888(2) $\AA$) and long (3.743(1) $\AA$) Nb-Nb distances are alternating along the chain, and the $S_2{^2-}]\;and\;S^{2-}$anionic species are observed. The distorted octahedral coordination around the $Ag^+$ ion can be described as [2+4] bonding interaction.

Interfacial Reactions of Sn-Ag-Cu solder on Ni-xCu alloy UBMs (Ni-xCu 합금 UBM과 Sn-Ag계 솔더 간의 계면 반응 연구)

  • Han Hun;Yu Jin;Lee Taek Yeong
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.84-87
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    • 2003
  • Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

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A 3 dB Coupler for Double Sided Printed Circuit Boards (이층 기판용 3 dB 커플러)

  • Lee, Dong-Ho
    • Journal of IKEEE
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    • v.18 no.4
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    • pp.559-565
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    • 2014
  • A 3 dB coupler has been designed and implemented using the most commonly used double-sided FR4 boards. The coupling and the bandwidth of the coupler are enhanced with the enlarged overlapped area of the coupler. Major design parameters are plotted as a design guide and the parameters are verified by simulation and measurement. The size of the manufactured coupler is $30{\times}14mm^2$. Its measured insertion loss and phase difference are 0.6 dB and $90.5^{\circ}$ at center frequency of 2.5 GHz, respectively. The operating frequency range is 1.72 GHz to 3.08 GHz for $3.6{\pm}0.5dB$ insertion loss. The coupler has the performance similar to that of conventional Lange coupler, and implementation of the coupler is easy and cheap with wide metal width and spacing and no additional wire bonding process.

A study on a silicon surface modification by $CHF_3/C_2F_6$ reactive ion etching ($CHF_3/C_2F_6$ 반응성이온 건식식각에 의한 실리콘 표면의 변형에 관한 연구)

  • Park, Hyeong-Ho;Gwon, Gwang-Ho;Gwak, Byeong-Hwa;Lee, Su-Min;Gwon, O-Jun;Kim, Bo-U;Seong, Yeong-Gwon
    • Korean Journal of Materials Research
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    • v.1 no.4
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    • pp.214-220
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    • 1991
  • The effects of $SiO_2$ reactive ion etching (RIE) in $CHF_{3/}C_2F_6$ on the surface properties of the underlying Si substrate were studied by X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) techniques. Angle-resolved XPS analysis was carried out as non-destructive depth profile one for investigating the chemical bonding states of silicion, carbon, oxygen and fluorine. The residue layer consists of C-F polymer. O-F bond was found on the top of the polymer layer and Si-O, Si-C and Si-F bonds were detected between Si substrate and polymer film. A 60nm thick damaged layer of silicon surface mainly contains carbon and fluorine.

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The Effects of Driving Waveform of Piezoelectric Industrial Inkjet Head for Fime Patterns (산업용 압전 잉크젯 헤드의 구동신호에 따른 특성)

  • Kim, Young-Jae;Yoo, Young-Seuck;Sim, Won-Chul;Park, Chang-Sung;Joung, Jae-Woo;Oh, Yong-Soo
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1621-1622
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    • 2006
  • This paper presents the effect of driving waveform for piezoelectric bend mode inkjet printhead with optimized mechanical design. Experimental and theoretical studies on the applied driving waveform versus jetting characteristic s were performed. The inkjet head has been designed to maximize the droplet velocity, minimize voltage response of the actuator and optimize the firing frequency to eject ink droplet. The head design was carried out by using mechanical simulation. The printhead has been fabricated with Si(100) and SOI wafers by MEMS process and silicon direct bonding method. To investigate how performance of the piezoelectric ceramic actuator influences on droplet diameter and droplet velocity, the method of stroboscopy was used. Also we observed the movement characteristics of PZT actuator with LDV(Laser Doppler Vibrometer) system, oscilloscope and dynamic signal analyzer. Missing nozzles caused by bubbles in chamber were monitored by their resonance frequency. Using the water based ink of viscosity of 4.8 cps and surface tension of 0.025N/m, it is possible to eject stable droplets up to 20kHz, 4.4m/s and above 8pL at the different applied driving waveforms.

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A fiber optic surface plasmon resonance (SPR) sensorusing cyclic olefin copolymer (COC) polymer prism (Cyclic olefin copolymer (COC) 폴리머 프리즘을 사용한 광섬유 기반 표면 플라즈몬 공명 (SPR) 바이오 센서)

  • Yun, Sung-Sik;Lee, Soo-Hyun;Ahn, Chong-H.;Lee, Jong-Hyun
    • Journal of Sensor Science and Technology
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    • v.17 no.5
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    • pp.369-374
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    • 2008
  • A novel fiber optic surface plasmon resonance (SPR) sensor using cyclic olefin copolymer (COC) prism with the spectral modulation is presented. The SPR sensor chip is fabricated using the SU-8 photolithography, Ni-electroplating and COC injection molding process. The sidewall of the COC prism is partially deposited with Au/Cr (45/2.nm thickness) by e-beam evaporator, and the thermal bonding process is conducted for micro fluidic channels and optical fibers alignment. The SPR spectrum for a phosphate buffered saline (0.1.M PBS, pH.7.2) solution shows a distinctive dip at 1300.nm wavelength, which shifts toward longer wavelength with respect to the bovine serum albumin (BSA)concentrations. The sensitivity of the wavelength shift is $1.16\;nm{\cdot}{\mu}g^{-1}{\cdot}{\mu}l^{-1}$. From the wavelength of SPR dips, the refractive indices (RI) of the BSA solutions can be theoretically calculated using Kretchmann configuration, and the change rate of the RI was found to be $2.3{\times}10^{-5}RI{\cdot}{\mu}g^{-1}{\cdot}l^{-1}$. The realized fiber optic SPR sensor with a COC prism has clearly shown the feasibility of a new disposable, low cost and miniaturized SPR biosensor for biochemical molecular analyses.

Silicon Capacitive Pressure Sensor for Low Pressure Measurements (저 압력 측정을 위한 실리콘 용량형 압력센서)

  • Seo, Hee-Don;Lee, Youn-Hee;Park, Jong-Dae;Choi, Se-Gon
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.19-27
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    • 1993
  • Capacitive pressure sensor for low pressure measurements has been fabricated by using $n^{+}$ epitaxial layer electrochemical etching stop and glass-to-silicon electrostatic bonding technique. The sensor had hybrid configuration of a sensor chip, which consists of sensor capacitor and reference capacitor, and two output signal detection IC chips. A fabricated sensor, with a $1.0{\times}1.0 mm^{2}$ square size and a $10{\mu}m$ thick flat diaphragm, showed a 7.1 pF zero pressure capacitance, and 5.2 % F.S, sensitivity in 10 KPa pressure range. By using a capacitance to voltage converter, the thermal zero shift of 0.051 %F.S./$^{\circ}C$ and the thermal sensitivity shift of 0.12 %F.S./$^{\circ}C$ for temperature range of $5{\sim}45^{\circ}C$ were obtained.

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Driving Per Nozzle By Various Waveform Depending On Resonance Frequency In Piezoelectric Inkjet Head (잉크젯 헤드의 공진주파수에 따른 구동파형을 이용한 개별노즐 제어)

  • Kim, Y.J.;Park, C.S.;Sim, W.C.;Kang, P.J.;Yoo, Y.S.;Park, J.H.;Joung, J.W.;Oh, Y.S.
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1542-1543
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    • 2007
  • This paper presents the effect of driving waveform for piezoelectric bend mode inkjet printhead with optimized mechanical design. Experimental and theoretical studies on the applied driving waveform versus jetting characteristics were performed. The inkjet head has been designed to maximize the droplet velocity, minimize voltage response of the actuator and optimize the firing frequency to eject ink droplet. The head design was carried out by using mechanical simulation. The printhead has been fabricated with Si(100) and SOI wafers by MEMS process and silicon direct bonding method. To investigate how performance of the piezoelectric ceramic actuator influences on droplet diameter and droplet velocity, the method of stroboscopy was used. Using the water based ink of viscosity of 11.8 cps and surface tension of 0.025N/m, it is possible to eject stable droplets through 64 nozzles average velocity of 4.05 m/s with standard deviation of 0.06 m/s and average diameter of $29.2\;{\mu}m$ with standard variation of $0.5\;{\mu}m$.

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Growth and characterization of molecular beam epitaxy grown GaN thin films using single source precursor with ammonia

  • Chandrasekar, P.V.;Lim, Hyun-Chul;Chang, Dong-Mi;Ahn, Se-Yong;Kim, Chang-Gyoun;Kim, Do-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.174-174
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    • 2010
  • Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

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Effect of Protective layer on LTCC Substrate for Thin Metal Film Patterns (LTCC 보호층 형성에 따른 박막 전극패턴에 관한 연구)

  • Kim, Yong-Suk;Yoo, Won-Hee;Chang, Byeung-Gyu;Park, Jung-Hwan;Yoo, Je-Gwang;Oh, Yong-Soo
    • Korean Journal of Materials Research
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    • v.19 no.7
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    • pp.349-355
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    • 2009
  • Metal thin film patterns on a LTCC substrate, which was connected through inner via and metal paste for electrical signals, were formed by a screen printing process that used electric paste, such as silver and copper, in a conventional method. This method brought about many problems, such as non uniform thickness in printing, large line spaces, and non-clearance. As a result of these problems, it was very difficult to perform fine and high resolution for high frequency signals. In this study, the electric signal patterns were formed with the sputtered metal thin films (Ti, Cu) on an LTCC substrate that was coated with protective oxide layers, such as $TiO_2$ and $SiO_2$. These electric signal patterns' morphology, surface bonding strength, and effect on electro plating were also investigated. After putting a sold ball on the sputtered metal thin films, their adhesion strength on the LTCC substrate was also evaluated. The protective oxide layers were found to play important roles in creating a strong design for electric components and integrating circuit modules in high frequency ranges.