• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Journal of IKEEE
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• v.16 no.1
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• pp.7-14
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• 2012

In this paper, a reception rate of terrestrial digital TV broadcasting service is analyzed and a novel method which can estimate the broadcasting coverage rate more objectively and reliably than the existing method is proposed. Previous method measures the reception rate by means of electric field intensity measurement or subjective video quality assessment. Because of limited measuring points, it inherently has measurement error and cannot consider the viewer's receiving conditions in real-time. In order to consider the viewer's population and receiving environment, morphology which characterizes the viewer's receiving environment is extracted using household census data of National Statistical Office and the land cover map of Ministry of Environment. Using the extracted geographical morphology, the reception rate of terrestrial digital TV broadcasting service is calculated with Spectrum Management Intelligence System (SMIs). Proposed method can calculate the reception rate more objectively and reliably than the existing methods because it fully considers the viewer's receiving environments in real-time.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.4
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• pp.49-61
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• 1981

A generally applicable computer simulation program for diffused silicon solar cells has been developed on the basis of the experimental results. The program can be easily used to obtain the spectral response and I-V characteristics for N+P, P+N N+PP+, P+NN+cells by changing various input parameters. The insolated spectra can be taken from AMI and constant intensity and GE - ELH lamp light sources. The options for AR coating are Si3N4 film and materials with constant reflectance including zero reflectance for ideal case. The computer simulation demonstrates successful results compared with the measured values for the short circuit current, open circuit voltage, efficiency, spectral response, quantum efficiency, I-V characteristics, etc. This program was used to optimize doping concentration, cell thickness, light concentration, junction depth, and to obtain the limit values for front surface recornbination velocity, effective carrier life time in the depletion regions and shunt resistance, and also to drive the changing rate in conversion efficiency depending on operation temperature, series resistance and electric field strength in N+P+ bulk regions.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.8
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• pp.1560-1565
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• 2011

The environmental pollution caused by green-house gases such as $CO_2$ and $SF_6$ has been becoming the main issue of industrial society. Many developed countries are making efforts to minimize the amount of $CO_2$ emission come from the operation of high voltage electrical apparatuses. As a part of these efforts, 180 countries signed the Kyoto Protocol in 1997 to cut back on their green-house gas emissions. Nowadays, the study on the development of dry air insulated switchgear (DAIS) which is known as an eco-friendly electrical apparatus is in progress. A DAIS is advantageous for minimizing the effect of impurities and enhancing the dielectric characteristics over an air insulated switchgear (AIS) by applying constant pressure to an enclosed cubicle. Therefore, a study on the electrical insulation performance of dry air as a gaseous insulation medium is conducted in this paper to substitute a gas insulated switchgear (GIS) for DAIS. As results, it is verified that the AC dielectric characteristics of dry air are similar to those of air and the lightning impulse dielectric characteristics of dry air are superior to those of air at 1bar pressure condition. However, dry air is of inferior dielectric characteristics to $SF_6$ at 4bar pressure condition. Finally, it is suggested that the internal pressure of DAIS should be over 4bar pressure to develop a high voltage switchgear which has similar electrical performance to a conventional GIS. Also, the empirical formulae on calculating the maximum electric field intensity at sparkover of dry air are deduced by experiments according to pressures. It is expected that these results are helpful to design and develop a high voltage electrical apparatus.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.359-363
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• 1997

We have investigated the surface characteristics of n-GaAs (100) treated with Ar plasma (40 W, 5~120 sec) by photoreflectance (PR) measurement. With increasing Ar plasma treatment time, the intensity of $E_0$ peak observed to the minimum at 5 sec. The surface electric field ($E_0$), net carrier concentration ($N_P-N_A$), and surface state density ($Q_{SS}$ are $1.05{\times}10^5V/cm$ and $1.31{\tiems}10^{17}cm^{-3}$ and $1.64{\times}10^{-7}C/m^2$, respectively. These values were about 57.1, 81.4 and 56.9% smaller than those of bulk n-GaAs. On the other hand, the concentration of compensation centers ($N_A$) was maximum with value of $5.75{\times}10^{17}cm^{-3}$ at 5 sec. And penetration depth of defects generated after treated with Ar plasma was about 450 $\AA$ from surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.624-627
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• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.20-21
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• 2008

Ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) copolymer films were directly deposited on degenerated Si ($n^+$, 0.002 $\Omega{\cdot}cm$) using by dip coating method. A 1 ~ 3 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers using dip coating method for 10 seconds. After Post-Annealing in a vacuum ambient at 100~200 $^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by thermal evaporation through the shadow mask to complete the MFS structure. The ferroelectric $\beta$-phase peak of films, depending on the annealing temperature, started to show up around $125^{\circ}C$, and the intensity of the peak increased with increasing annealing temperature. Above $175^{\circ}C$, the peak started to decrease. The C-V characteristics were measured using a Precision LCR meter (HP 4284A) with frequency of 1MHz and a signal amplitude of 20 mV. The leakage-current versus electric-field characteristics was measured by mean of a pA meter/DC voltage source (HP 4140B).

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.858-868
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• 1992

0.085Ba(LaS11/2TNbS11/2T)OS13T-0.915Pb(ZrS1yTTiS11-yT)OS13T (0.45$\leq$y$\leq$0.65) transparent electrooptic ceramics were fabricated by two-stage sintering method. The structural, ferroelectric and electrooptic properties were investigated varying composition and second sintering time. Also the possibility of application to electrooptic device was studied. If we increase the PbZrOS13T contents, dielectric constants were increased and Curie temperature was decreased. In the composition of 0.55[mol] PbZrOS13T, electromechanical coupling factor and piezoelectric charge constant were the highest values of 43[%] and 173x10S0-12T[C/N], respectively. Mechanical quality factors were decreased with the increasing PbZrOS13T contents. Light transmittance was increased with wavelength when measured from 300[nm] to 900[nm], and with PbZrOS13T contents in the range of 0.50[mol]-0.65[mol], and had the highest value of 67[%] in the composition of 0.65[mol] PbZrOS13T. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the specimens with compositions of 0.65,0.60,0.55[mol] PbZrOS13T were applicable to electrooptic memory device and those with compositions of 0.50,0.45[mol] PbZrOS13T were applicable to linear electrooptic device.

• Geomechanics and Engineering
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• v.1 no.4
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• pp.275-289
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• 2009

Electroosmosis (EO) is the movement of water in a porous medium under the influence of a direct current (dc). In past decades, electro-osmosis has been successfully employed in many soil improvement and other geotechnical engineering projects. Metal electrodes, such as steel, copper and aluminum have been used traditionally to conduct current. The shortcoming of these electrodes is that they corrode easily during an EO treatment, which results in reduced effectiveness and environmental concerns. More recently, conductive polymers are developed to replace metal electrodes in EO treatment. Electrical vertical drainages (EVDs) are one of these products under trial. The goal of this study is to assess the performance of EVDs for soil improvement and to further understand the scientific principle of the EO process, including the voltage drop at the soil-EVD interface, electrical current density, polarity reversal, and changes in soil physico-chemical properties generated by electroosmosis. It is found from the study that after 19 days of EO treatment with a constant applied dc electric field intensity of 133 V/m, the soil's moisture content decreased by 28%, the shear strength and pre-consolidation pressure increased more than 400%. It is also found that the current density required triggering the water flow in the soil tested, the Korean Yulchon marine clay, is 0.7 $A/m^2$. The project demonstrates that EVDs can serve as both electrodes and drains for soil improvement in short term. However, the EVDs, as tested, are not suitable for polarity reversal in EO treatment and their service life is limited to only 15 days.

• Korean Journal of Materials Research
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• v.32 no.10
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• pp.425-428
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• 2022

In this study, Y₃Al₅O₁₂:Eu³⁺ red phosphors were synthesized at different temperatures using a solid state reaction method. The crystal structures, surface and optical properties of the Y₃Al₅O₁₂:Eu³⁺ red phosphors were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and photoluminescence (PL) analyses. From XRD results, the crystal structure of the Y₃Al₅O₁₂:Eu³⁺ red phosphors was determined to be cubic. The maximum emission spectra were observed for the Y₃Al₅O₁₂:Eu³⁺ red phosphor prepared by annealing for 4h at 1,700 ℃. The 565~590 nm photoluminescent spectra of the Y₃Al₅O₁₂:Eu³⁺ red phosphors is associated with the ⁵D₀ → ⁷F₂ magnetic dipole transition of the Eu³⁺ ions. The intensity of the photoluminescent spectra in the red phosphors is more dominant for the magnetic dipole transition than the electric dipole transition with increasing annealing temperature. The International Commission on Illumination (CIE) coordinates of Y₃Al₅O₁₂:Eu³⁺ red phosphors prepared by 1,700 ℃ annealing temperature are X = 0.5994, Y = 0.3647.