• 제목/요약/키워드: Effects of Si

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Al-Mg 계 다이캐스팅 합금의 미세조직 및 기계적 성질에 미치는 Mg 및 Si의 영향 (Effects of Mg and Si on Microstructure and Mechanical Properties of Al-Mg Die Casting Alloy)

  • 조재익;김철우
    • 한국주조공학회지
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    • 제32권5호
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    • pp.219-224
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    • 2012
  • The effects of Mg and Si contents on the microstructure and mechanical properties in Al-Mg alloy (ALDC6) were investigated. The results showed that phase fraction and size of $Mg_2Si$ and $Al_{15}(Fe,Mn)_3Si_2$ phase in the microstructure of Al-Mg alloy were increased as the Mg and Si contents were raised from 2.5 to 3.5 wt%. With Si content of 1.5 wt%, freezing range of the alloy was significantly reduced and solidification became more complex during the final stage of solidification. While there was no significant influence of Mg contents on mechanical properties, Si contents up to 1.5 wt%, strongly affected the mechanical properties. Especially elongation was reduced by about a half with more than 1.0 wt%Si in the alloy. The bending and impact strength were decreased with increased amount of Si in the alloy, as well. The lowered mechanical properties are because of the growth of particle shaped coarse $Mg_2Si$ phase and precipitation of the needle like $\beta$-AlFeSi in the microstructure at the last region to solidify due to presence of excess amount of Si in the alloy.

과공정 Al-Si 합금의 마모 특성에 미치는 잔류응력의 영향에 관한 연구 (A Study on the Relationship between Residual Stress and Wear Peroperty in Hypereutectic Al-Si Alloys)

  • 김헌주;김창규
    • 한국주조공학회지
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    • 제20권2호
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    • pp.89-96
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    • 2000
  • The effects of modification processing on the refinement of primary Si and the wear behavior of hyper-eutectic Al-Si alloys have been mainly investigated. Refining effects of primary Si in Al-17%Si alloy was more efficient than that of B.390 alloy. Optimum condition of getting the finest primary Si microstructure was when AlCuP modifier is added into the melt at $750^{\circ}C$ and held it at $700^{\circ}C$ for 30 minutes. Wear loss in the specimens of as-cast condition decreases as the size of primary Si decreases, in the order of B.390 alloy, B.390 alloy with AlCuP addition, Al-17%Si alloy and Al-17%Si alloy with AlCuP addition. Wear loss in the aged condition of Al-17%Si alloy, B.390 alloy and B.390 alloy with AlCuP addition decreased due to the increase of compressive residual stress in the matrix by the aging treatment. While, wear loss increased in the aged specimens of Al-17%Si alloy with AlCuP addition and Hepworth addition in which compressive residual stress decreases by the aging treatment. Therefore, it is assumed that higher compressive residual stress in the matrix can reduce the wear loss in composite materials such as hyper-eutectic Al-Si alloys.

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p-채널 Poly-Si TFT s 소자의 Hot-Carrier 효과에 관한 연구 (A Study on the Hot-Carrier Effects of p-Channel Poly-Si TFT s)

  • 진교원;박태성;백희원;이진민;조봉희;김영호
    • 한국전기전자재료학회논문지
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    • 제11권9호
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    • pp.683-686
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    • 1998
  • Hot carrier effects as a function of bias stress time and bias stress consitions were syste-matically investigated in p-channel poly-Si TFT s fabricated on the quartz substrate. The device degradation was observed for the negative bias stress, while improvement of electrical characteristic except for subthreshold slope was observed for the positive bias stress. It was found that these results were related to the hot-carrier injection into the gate oxide and interface states at the poly-Si/$SiO_2$interface rather than defects states generation within the poly-Si active layer under bias stress.

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극미세 전자소자 박막배선 재료 개선을 위한 엘렉트로마이그레이션 현상에 미치는 절연보호막 효과 (Dielectric Passivation Effects on the Electromigration Phenomena for the Improvement of Microelectronic Thin Film interconnection Materials)

  • 박영식;김진영
    • 한국진공학회지
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    • 제5권2호
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    • pp.161-168
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    • 1996
  • For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the $SiO_2$ layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/$SiO_2$ dielectric passivation layers showed longer lifetime than $Si_3N_4$ dielectric passivation layers. This results from the PSG on $SiO_2$ layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.

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LPS - SiC 세라믹스의 굽힘강도 특성에 미치는 미시조직 영향 (Microstructure Effects on Bending Strength Characteristics of LPS - SiC Ceramic)

  • 윤한기;정헌채
    • 한국해양공학회지
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    • 제20권5호
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    • pp.77-81
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    • 2006
  • In this study, monolithic liquid phase sintered SiC (LPS-SiC) was made by the hot pressing method with nano-SiC powder, whose particle size is 30 nm and less on the average. Alumina ($Al_{2}O_{3}$), yttria ($Y_{2}O_{3}$), and silica ($S_{i}O_{2}$) were used for sintering additives. To investigate the effects of $S_{i}O_{2}$, the $Al_{2}O_{3}/Y_{2}O_{3}$ composition was fixed and the ratio of $S_{i}O_{2}$ was changed, with seven different ratios tested. And to investigate the effects of the sintering temperature, the sintering temperature was changed, with $1760^{\circ}C,\;1780_{\circ}C$, and $1800_{\circ}C$ being used with a $S_{i}O_{2}$ ratio of 3 wt%. The materials were sintered for 1 hour at $1760^{\circ}C,\;1780^{\circ}C$ and $1800^{\circ}C$ under a pressure of 20 MPa. The effects on sintering from the sintering system used, as well as from the composition of the sintering additives, were investigated by density measurements. Mechanical properties, such as flexural strength, were investigated to ensure the optimum conditions for a matrix of SiCf/SiC composites. Sintered densityand the flexural strength of fabricated LPS-SiC increased with an increase in sintering temperature. Particularly, the relative density of a sintered body at $1800^{\circ}C$ with a non-content of $S_{i}O_{2}$, a specimen of AYSO-1800, was 95%. Also, flexural strength was about 750MPa.

SiC 입자강화 Al-Si 복합재료의 내마멸성에 미치는 Cu , Mg의 영향 (Effects of Cu and Mg on Wear Properties of SiC Particulate Reinforced Al-Si Metal Matrix Composites)

  • 심상한;정용근;박익민
    • 한국주조공학회지
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    • 제10권1호
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    • pp.43-49
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    • 1990
  • The influences of Cu and Mg addition on wear properties of SiC particulate reinforced Al-Si metal(alloy) matrix composites were investigated. Metal matrix composites were prepared by combination of compocasting and hot pressing techniques. The main results obtained are as follows : 1) The composite with Mg addition exhibits letter wear resistance than that with Cu addition. It is considered that Mg addition improved wettability of matal matrix composite by the strong segregation to the SiC / Al matrix interface. 2) After homogenization treatment, it was found that the interfacial segregation of Mg was predominant, while that of Cu was not detected. 3) The SiC / Al-11Si eutectic composite exhibits better wear resistance than the SiC / Al-6Si hypoeutectic composite does. 4) It seems that the increase in the amount of Mg addition affects on the uniform dispersion of SiC particulates, on the refinement of microstructure and on age hardening and these effects cause wear resistance improvement of composites.

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Vibration analysis of silica nanoparticles-reinforced concrete beams considering agglomeration effects

  • Shokravi, Maryam
    • Computers and Concrete
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    • 제19권3호
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    • pp.333-338
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    • 2017
  • In this paper, nonlinear vibration of embedded nanocomposite concrete is investigated based on Timoshenko beam model. The beam is reinforced by with agglomerated silicon dioxide (SiO2) nanoparticles. Mori-Tanaka model is used for considering agglomeration effects and calculating the equivalent characteristics of the structure. The surrounding foundation is simulated with Pasternak medium. Energy method and Hamilton's principal are used for deriving the motion equations. Differential quadrature method (DQM) is applied in order to obtain the frequency of structure. The effects of different parameters such as volume percent of SiO2 nanoparticles, nanoparticles agglomeration, elastic medium, boundary conditions and geometrical parameters of beam are shown on the frequency of system. Numerical results indicate that with increasing the SiO2 nanoparticles, the frequency of structure increases. In addition, considering agglomeration effects leads to decrease in frequency of system.

솔-젤 공정으로 제조된 SiO2-C 복합 전구체를 사용하여 열탄소환원법에 의한 β-SiC 분말 합성에 금속 Si 첨가가 미치는 영향 (Effects of Metallic Silicon on the Synthsis of β-SiC Powders by a Carbothermal Reduction Using SiO2-C Hybrid Precursor Fabricated by a Sol-gel Process)

  • 조영철;염미래;윤성일;조경선;박상환
    • 한국세라믹학회지
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    • 제50권6호
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    • pp.402-409
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    • 2013
  • The objective of this study was to develop a synthesis process for ${\beta}$-SiC powders to reduce the synthesis temperature and to control the particle size and to prevent particle agglomeration of the synthesized ${\beta}$-SiC powders. A phenol resin and TEOS were used as the starting materials for the carbon and Si sources, respectively. $SiO_2$-C hybrid precursors with various C/Si mole ratios were fabricated using a conventional sol-gel process. ${\beta}$-SiC powders were synthesized by a carbothermal reduction process using $SiO_2$-C hybrid precursors with various C/Si mole ratios (1.6 ~ 2.5) fabricated using a sol-gel process. In this study, the effects of excess carbon and the addition of Si powders to the $SiO_2$-C hybrid precursor on the synthesis temperature and particle size of ${\beta}$-SiC were examined. It was found that the addition of metallic Si powders to the $SiO_2$/C hybrid precursor with excess carbon reduced the synthesis temperature of the ${\beta}$-SiC powders to as low as $1300^{\circ}C$. The synthesis temperature for ${\beta}$-SiC appeared to be reduced with an increase of the C/Si mole ratio in the $SiO_2$-C hybrid precursor by a direct carburization reaction between Si and excess carbon.

저온에서 제작된 다결정 실리콘 박막 트랜지스터의 수소화 효과에 대한 분석 (Analysis of hydrogenation effects on Low temperature Poly-Si Thin Film Transistor)

  • 최권영;김용상;이성규;전명철;한민구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 B
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    • pp.1289-1291
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    • 1993
  • The hydrogenation effects on characteristics of polycrystalline silicon thin film transistors(poly-Si TFT's) of which the channel length varies from $2.5{\mu}m\;to\;20{\mu}m$ and poly-Si layer thickness is 50, 100, and 150 nm was investigated. After 1 hr hydrogenation annealing by PECVD, the threshold voltage shift decreased dependent on the channel length, but channel width may not alter the threshold voltage shift. In addition to channel length, the active poly-Si layer thickness may be an important parameter on hydrogenation effects, while gate poly-Si thickness may do not influence on the characteristics of TFT's. Considering our experimental results, we propose that channel length and active poly-Si layer thickness may be a key parameters of hydrogenation of poly-Si TFT's.

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알루미늄 - 규소 합금의 용탕단조시 유동도에 미치는 규소 함량 및 용탕 처리의 영향 (Effects of Si Content and Melt Treatment on the Fluidity of Al-Si Alloy during Squeeze Casting)

  • 이학주;권해욱
    • 한국주조공학회지
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    • 제26권6호
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    • pp.241-248
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    • 2006
  • The effects of silicon content and melt treatment on the fluidity of Al-Si alloys during squeeze casting were investigated. The fluidity of Al-3.0 wt%Si alloy was found to be lower than that of Al-1.0 wt%Si and the fluidity of the alloy with more than 3.0 wt%Si increased with the silicon content upto 13.0 wt% and rather decreased with15.0 wt%. The fluidity was also increased by the separated treatment of grain refinement or eutectic modification, and even more by the simultaneous treatment of both. The fluidity of hypereutectic alloy was increased by the refinement of primary silicon particle.