• 지구물리와물리탐사
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• 제12권1호
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• pp.69-76
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• 2009

이 논문에서는 성곽의 옛터에서 수행된 GPR탐사 결과에 대해 기술하고자 한다. 이 탐사의 목적은 몽고의 반칸 투리일의 유적지에서 2차원과 3차원 GPR 탐사방법을 이용하여 벽이나 타일 등의 매립되어있는 고고학적 구조물의 특징을 알아내는데 있다. GPR자료는 500 MHz와 800 MHz의 두 주파수의 안테나를 이용하여 10 cm의 측선간격으로 $10m\;{\times}\;9m$의 영역에 대해 획득 되었다. 이 논문에서는 타일, 벽돌. 석조물 등의 고고학적 대상체를 탐지해 내기 위한 편광측정 GPR 탐사기를 통해 얻어지는 순간변수들의 이용에 관해 다루고자 한다. 레이다 편광측정은 대상체의 산란특성을 끌어내는 진보된 기술이다. 이 방법은 대상체의 크기, 모양, 지향성 및 표면의 상태에 대한 보다 많은 정보를 제공해준다. 우리는 해석의 초점을 강한 반사파에 맞추었으며, 영상의 질은 순간변수들을 사유하여 높였다. 반사신호의 모양과 길이를 살펴본 결과 순간진폭의 중간 부터 높은 강도의 반응은 벽돌이나 타일에 대응되는 것을 알 수 있었다. 순간위상을 이용하여 만든 지도는 일반 신호에서 불연속성을 보이던 탐사 대상체의 위치를 알아내는데 중요한 정보를 제공하였다. 이러한 고고학적 대상체의 탐사 가능성을 높이기 위하여, 서로 직교하는 두 측선에 대해 GPR 자료를 획득하였다. 이 두 자료를 비교한 결과 반사신호들의 정렬이 좋은 상관관계를 갖는 것을 확인하였다. 그러나. 북쪽에서 남쪽 방향으로 측정된 탐사 자료에서 서쪽에서 동쪽 방향으로 측정된 탐사자료보다 많은 반사 신호가 관측되었다. 이는 북쪽에서 남쪽으로 수행된 탐사방향과 수평면 상에 위치하게 피는 전기장의 지향성 때문이며 고에너지의 후방산란된 수평 분극 성분이 기록된 것이다.

• 천문학회보
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• 제44권1호
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• pp.80.1-80.1
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• 2019

Photometric investigations of asteroids allow us to determine their rotation states and shape models (Apostolovska et al. 2014). Our main target, asteroid (2078) Nanking's perihelion distance (q) is 1.480 AU, which belongs to the Mars-crossing asteroid (1.3 < q < 1.66 AU). Mars-crossing asteroids are objects that cross the orbit of Mars and regarded as one of the primary sources of near-Earth asteroids due to the unstable nature of their orbits. We present the analysis of the spin parameters and 3D shape model of (2078) Nanking. We conducted Cousins_R-band time-series photometry of this asteroid from November 26, 2014 to January 17, 2015 at the Sobaeksan Optical Astronomy Observatory (SOAO) and for 25 nights from March to April 2016 using the Korea Microlensing Telescope Network (KMTNet) to reconstruct its physical model with our dense photometric datasets. Using the lightcurve inversion method (Kaasalainen & Torppa 2001; Kaasalainen et al. 2001), we determine the pole orientation and shape model of this object based on our lightcurves along with the archival data obtained from the literatures. We derived rotational period of 6.461 h, the preliminary ecliptic longitude (${\lambda}_p$) and latitude (${\beta}_p$) of its pole as ${\lambda}_p{\sim}8^{\circ}$ and ${\beta}_p{\sim}-52^{\circ}$ which indicates a retrograde rotation of the body. From the apparent W UMa-shaped lightcurve and its location in the rotation frequency-amplitude plot of Sheppard and Jewitt (2004), we suspect the contact binary nature of the body (Choi 2016).

• Journal of Astronomy and Space Sciences
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• 제23권4호
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• pp.337-344
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• 2006

전파천문학과 우주측지학적 활용을 목적으로 3기의 전파망원경으로 국내에 구축되고 있는 초장 거리간섭계(VLBI; Very Long Baseline Interferometry)인 KVN의 우주측지학적 기여도를 분석하기 위한 모의실험을 수행하였다. KVN의 우주측지학적 기여도를 두 가지 서로 다른 규모의 관측망에 대해 분석하기 위해 동아시아 지역의 local관측망(KVN-Asia)과 태평양 주변 지역의 global 관측망(KVN-Pacific)을 구성하였다. KVN이 이들 두 관측망에 포함되기 전 후에 대한 정량적 기여도 분석이 이 연구를 통해 수행된 모의실험의 주목적이다. 이를 위해 관측소 좌표와 지구회전계수(EOPs; Earth Orientation Parameters)를 정량적 기여도 분석의 기준 파라미터로 선택하였다. 이들 파라미터는 모의실험을 통해 추정되는 대상인 동시에 KVN 포함 전 후의 추정 정밀도 향상에 대한 기준 비교인자이기도 하다. 관측소 좌표는 KVN-Asia에 대한 기준 비교인자로 사용되었고, EOP는 KVN-Pacific에 대한 기준 비교인자로 사용되었다. 모의 실험 결과 KVN-Asia와 KVN-Pacific의 기준 비교인자 추정정밀도 개선에 대한 KVN의 기여도는 최대 50%, 20%수준이 될 것으로 예상되었다. 또한 연구결과를 토대로 제안된 KVN의 우주측지학적 유망연구 분야들은 향후 KVN우주측지학적 활용의 핵심분야가 될 것으로 기대한다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.