• Journal of the Korean Society for Precision Engineering
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• v.30 no.4
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• pp.403-408
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• 2013

In this paper, the characteristics of ablation processing of the eagle glass by pico-second laser are investigated. The laser ablation is used to process micro forms on materials. The ablation causes little thermal effect and little burr on the surface of eagle glass. In order to examine the characteristics of panic cracks, experiments are conducted under various cutting conditions such as a frequency of 600 kHz, laser powers, scan speeds and number of scan(NS). To minimize the panic cracks, the specimens are heated at $30^{\circ}C$, $45^{\circ}C$, and $60^{\circ}C$ for ten minutes respectively and then they are broken by hands. Laser powers, NS and scan speeds have an effect on glass cutting results. The ablation depths increase with an increase in the laser power and NS whereas the panic cracks decrease with an increase in scan speed. The high temperature on processed specimens reduces the panic cracks and makes good results of laser cutting. The optimal condition for eagle glass laser cutting is found to be at 30 W of laser power, 3 mm/s of scan speed and 500 of NS, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.41-46
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• 2008

Etching kinetics of $EAGLE^{2000TM}$ LCD glass was investigated using 2.5MHF-xMHCl$(x:0\sim8)$ acid mixtures. It was concluded that the reaction of HF-containing solutions with the glass was the rate-determining step for the dissolution process when considering following observations; the value of the activation energy $35\sim45$ kJ/mol and insensitivity of the dissolution rate to the etching time and the moving velocity of the glass into the solution. The etching rate linearly increased with increasing the HCl concentration in the etchant. It was also observed that the etched surface was as smooth as the original surface by addition of HCl and increase in etching temperature. This is due to the catalytic role of the $H_{3}O^{+]$ ions in the dissolution process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.129-130
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• 2012

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.57.1-57.1
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• 2010

ITO(Indium Tin Oxide)는 전도도와 투과도 특성이 뛰어나 디스플레이, 태양전지, LED 등 여러 산업에서 전극 물질로 널리 사용 되어져 왔다. 최근 ITO의 사용이 급격히 증가하면서 이에 대한 연구가 활발히 진행되고 있다. ITO는 막의 특성을 좋게 하기 위하여 증착 시 Ar gas와 함께 $O_2$가스를 첨가하기도 한다. 본 연구에서는 산소 분압에 따른 ITO 박막의 전기적, 광학적 특성에 대하여 연구하였다. Corning사의 eagle 2000 glass 기판위에 스퍼터링을 이용하여 ITO layer를 증측하였고, 증착시, $O_2$ partial pressure를 0 - 0.5%까지 0.1% 간격으로 가변하였다. 증착된 샘플은 Sinton사의 UV-vis 장비를 이용하여 광학적 특성을 측정하였고, Hall measurement 장비를 이용하여 전기적 특성을 측정하였다. ITO 박막은 $O_2$의 partial pressure가 증가할수록 향상된 전기적, 광학적 특성을 나타내었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.558-564
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• 2012

We fabricated Ga doped ZnO (GZO) thin films on the glass substrate (Eagle 2000) with various of Ga doping concentration and annealing temperatures using sol-gel method, electrical and optical properties were investigated. When the GZO thin films doped with 1 mol% of Ga and annealed at $600^{\circ}C$, the excellent (002) orientation was observed. In the results of Hall measurement, carrier concentration decreased and resistivity increased due to segregation effect with increasing of the Ga doping concentration. The largest carrier concentration and lowest resistivity were $9.13{\times}10^{18}cm^{-3}$ and $0.87{\Omega}cm$, respectively, in the GZO thin films doped with 1 mol% Ga and annealed at $600^{\circ}C$. All films is higher than 80 % in the visible light region. Energy band gap narrowing due to Burstein-Moss effect was observed with increasing of Ga doping concentration from 1 to 4 mol%.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1873-1878
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• 2013

ITZO ($In_2O_3$ : $SnO_2$ : ZnO = 90wt.% : 5wt.% : 5wt.%) thin films were fabricated on glass substrates (Eagle 2000) at room temperature with various working pressures (1~7 mTorr) by RF magnetron sputtering. The influence of the working pressure on the structural, electrical, and optical properties of the ITZO thin films were investigated. The XRD and FESEM results showed that all ITZO thin films are amorphous structures with very smooth surfaces regardless of the working pressure. Amorphous ITZO thin films deposited at 3 mTorr showed the best properties, such as a low resistivity, high transmittance, and figure of merit of $3.08{\times}10^{-4}{\Omega}{\cdot}cm$, 81 %, and $10.52{\times}10^{-3}{\Omega}^{-1}$, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.65-68
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• 2009

본 연구에서는 eagle 2000 glass위에 APCVD(atmospheric CVD)증착법으로 $SnO_2$:F 박막을 제조하였다. 공정 온도, doping 농도, TTC(Tin tetrachloride)와 $H_2O$, $CH_3OH$의 조성비를 공정 변수로 두었으며, 각 변수에 대한 전기적, 광학적 특성 및 결정성을 확인하였다. hall measurement를 이용 제작된 박막의 전기적 특성을 확인 하였고, uv-VIS spectroscopy, hazemeer를 이용 박막의 광학적 특성을 확인 하였다. 또한 XRD, FESEM, AFM을 이용 박막의 결정성 및 표면 특성을 확인 하였다. 박막의 결정성을 결정짓는 증착 온도의 경우 $590^{\circ}C$에서 완벽한 Tetragonal rutile 형태의 결정성을 보였으며 $SnO_2$:F film $1{\mu}m$ thickness에서 $10({\Omega}/{\square})$ 내외의 우수한 면저항값과 $30(cm^2/Vs)$ 이상의 mobility값을 확인 하였으며, 가시광영역대 에서 높은 투과율과 우수한 haze값을 얻었다.

• The Korean Journal of Zoology
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• v.10 no.1
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• pp.1-9
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• 1967

본 실험은 4 일간의 성주기가 뚜렷한 성체인 golden hamster로부터 미성숙인 난자를 적출하여 화학적배양액내에서 그의 성숙을 유도시키고 성주기에 따른 미성숙 난자의 성렬율을 관찰하는 것을 주요 목적으로 하여 행하여졌다. 한 개의 난소로부터 5-6개의 미성숙 난자를 적출하여 5% bovine serum albumin이 섞인 TC Medium 199에 넣어서$CO_2$-incubator를 이용하여 6 시간내지 24시간 동안 37$^{\circ}C$를 유지해가며, 배양액이 직접 공기와접촉하는 것을 막기 위해 유동성인 paraffin oil로 배양액을 덮고서 배양을 완수했다. 실험의 결과를 다음과 같이 완수했다. 1. Hamster의 난자의 성숙분렬을 유발시키는데 가장 적합한 배양액은 BMOC, Eagle's Medium , Waymouth's Medium 그리고 TC Medium 199의 네가지 가운데 TC Medium199이었다. 즉 이 배양액을 이용했을 때 난자가 높은 성렬도를 보여주었다. 2. 5% bovine serum alumn을 TC Medium 199에 섞어주었을 때 미성숙 난자가 성순분렬을 유기하는 율이 가장 높았다. 3. 발정기에 있는 난소로부터 얻은 난자가 가장 현저하게 높은 율로 성숙분렬을 보여주었다. 반대로 발정후기의 난자는 배양 시작 후 단시간 내에 대부분이 퇴화하였으며 발정기에 가까워 갈수록 퇴화율이 줄어들었다. 이것은 노포가 성숙분렬을 억제하는 물질을 생성하리라고 여겨지고 있긴 \ulcorner만, 동시에 이 노포는 또 한편 난자의 배란뒤에까지도 생명력을 유지할수 있는 능력을 발정기에 이르기까지의 기간동안 난자에게 부여하며, 난자는 이 능력을 배란전까지 축적하게 되며 이 때문에 노포로부터 유리되어 나온 난자가 장기간 그 생명력을 유지해나가는 것이라고 추정된다. 4. Paraffin oil 로 공기를 차단하여서 배양한 난자나 혹은 watch glass를 이용하여 공기와 접촉시킨 난자에서나 모든 비슷한 율로 성숙분렬을 보여주었다. 이로 보아 조작이 까다로운 paraffin oil을 이용하는 방법보다는 손쉽게 배양할 수 있는 watch glass 의 방법이 오히려 유용하다고 할 수 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.367-373
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• 2007

[ $In_2O_3-ZnO(IZO)$ ] and $In_2O_3-ZnO-SnO_2(IZTO)$ thin films were prepared on EAGLE 2000 glass webs in a Ar gas by RF-Magnetron sputtering. Electrical resistivity and optical transmittance of the films were investigated. IZO, IZTO film showed excellent optical transmittance of 85 % at the visible $400{\sim}$780 nm wavelength. Electrical properties of IZO film have $6.50{\times}10^{-4}{\Omega}cm$ (95 $In_2O_3$ : 5 ZnO wt.%) and $5.20{\times}10^{-4}{\Omega}cm$ (90 : 10 wt.%), IZTO film have $8.00{\times}10^{-4}{\Omega}cm$ (90 $In_2O_3$ : 3 ZnO : 7 $SnO_2$ wt.%) and $6.50{\times}10^{-4}{\Omega}cm$ (90 : 7 : 3 wt.%). Substitution of SnO to ZnO in ITO films showed slightly lower electrical conductivity than ITO film but showed similar optical transmittance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.691-698
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• 2010

In this study Al-doped ZnO (AZO) thin films have been fabricated on Eagle 2000 glass substrates at various substrate temperature ($100{\sim}500^{\circ}C$) and working pressure (10 ~ 40 mTorr) by RF magnetron sputtering in order to investigate the structural, electrical, and optical properties of the AZO thin films. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The AZO thin films, which were deposited at $T=300^{\circ}C$ for 10 mTorr, shows the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak is $0.42^{\circ}$. The lowest resistivity ($2.64{\times}10^{-3}\;{\Omega}cm$) with the highest cartier concentration ($5.29{\times}10^{20}\;cm^{-3}$) and a Hall mobility of ($6.23\;cm^2/Vs$) are obtained in the AZO thin films deposited at $T=300^{\circ}C$ for 10 mTorr. The optical transmittance in the visible region is approximately 80%, regardless of process conditions. The optical band-gap depends on the Al doping level as the substrate temperature increases and the working pressure decrease. The optical band-gap widening is proportional to cartier concentration due to the Burstein-Moss effect.