• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.518-518
• /
• 2013

자외선이 생체를 파괴하거나 탄생시킬 수 있는 중요한 요소라는 것은 잘 알려져있다. 이 때문에 생체 시료를 보통 자외선 파장대인 250~350 nm보다 짧은 10 nm 영역에 있는 극자외선에 노출되었을 때 그 상호작용 및 변화를 찾아서 분석하는 것을 목표로 삼는다. 먼저 이에 대한 기초내용으로, 앞으로 활용하게 될 플라즈마 집속장치에서의 전극형태에 따른 EUV 광원의 특성을 알아보는 실험을 진행하였다. 이 실험은 집속 플라즈마 발진장치의 2가지 전극인 마테르 (Mather) 형태의 전극과, 초사이클로이달 핀치(Hypercycloidal pinch) 핀치 형태의 전극에서 발진된 극자외선(Extreme Ultraviolet : EUV) 집속 플라즈마의 전자온도와, 전자밀도, power를 분석하였다. 그리고 EUV 광원 발생장치에 Ar 가스와, Ne-Xe 가스내 환경에서 2 종류의 전극에 의해 만들어진 고밀도 플라즈마로부터 발생된 EUV의 특성을 알아보았다.

• 천문학회보
• /
• 제36권1호
• /
• pp.39.1-39.1
• /
• 2011

Coronal mass ejection (CME) plasmas have been observed in EUV and X-ray passbands as well as in white light. Mass of CME has been determined using polarized brightness observed by the Large Angle and Spectrometric Coronagraph Experiment (LASCO) on board Solar and Heliospheric Observatory (SOHO). Therefore, this mass obtained from the LASCO observation indicates the total CME mass. However, the mass of CME plasma in different temperatures can be determined in EUV and X-ray passbands using observations by SOHO/EIT, STEREO/EUVI, and Hinode/XRT. Prominence/CME plasmas have been observed as absorption or emission features in EUV and X-ray passbands. The absorption features provide a lower limit to cold mass. In addition, the emission features provide an upper limit to the mass of plasmas in temperature ranges of EUV and X-ray. We determine the mass constraints using the emission measure obtained by assuming the prominence/CME structures. This work will address the mass constraints of hot and cold plasmas in CMEs, comparing to total CME mass.

• 천문학회보
• /
• 제44권1호
• /
• pp.50.3-50.3
• /
• 2019

The EUV wave is a disturbance that has been believed to be the fast-mode (shock) wave, which can propagate passing through magnetic field lines. After the passage of EUV waves, coronal streamers start to show kink-mode oscillations, and the footpoints, i.e., magnetic separatrices, of the oscillating streamers are observed as the so-called stationary front. We compare the stationary front observed by EUV imagers and coronal streamers observed in coronagraphic images. We analyze the successive events occurred in September 2011. We find that the stationary fronts are consistent with the coronal streamer boundaries, and they are located along the boundaries of coronal holes and active regions. Our results confirm that EUV waves are in fact fast-mode waves and demonstrate that the stationary front is a promising tool to probe into the source of slow solar wind that is the boundary of coronal streamers on the solar surface.

• Journal of Korean Society for Atmospheric Environment
• /
• 제24권E2호
• /
• pp.74-82
• /
• 2008

We have examined seasonal and annual means of clear-sky solar noon and daily erythemal ultraviolet-B irradiances measured in Anmyeon. The intensity of the EUV-B irradiance is mainly dependent on solar zenith angle (SZA) and total ozone amounts on clear day conditions. The daily maximum occurs near solar noon time and the highest monthly accumulated EUV-B is seen in July in Anmyeon. The maximum daily variation occurs in June and July due to precipitation and clouds. The 7-year trend of EUV-B irradiance shows that it is slightly increasing. Additionally, we could confirm that aerosol effects such as Asian Dust decreases the EUV-B irradiance reaching the ground surface by 35% to 60%. For more than 45% of the summer days, EUV-B irradiacne was high enough that the UV index registered higher than category Extremely High. This information will be very important for evaluation of the UV index for prevention of both skin cancer and ecosystem damages as well as to understand UV climatology over the Korean Peninsula.

• 한국대기환경학회지
• /
• 제22권2호
• /
• pp.223-233
• /
• 2006

We analyzed the monthly and seasonal mean of the daily Erythemal Ultraviolet-B (EUV-B, $280{\sim}320nm$) irradiance operating in Pohang, Anmyeon, Gosan, Mokpo and Kangnung with UV-Biometer (Solar Light Co., Model No. 501) at clear-sky noon during the period from 1999 to 2004. Also, we investigated the seasonal and regional characteristics for the UV index over the Korean Peninsula. The daily maximum occurred near solar southing time and the highest monthly accumulated EUV-B irradiance appeared in July and August at each regional observatory. The monthly mean value of the clear-sky EUV-B irradiance in Pohang, Anmyeon, Gosan, Mokpo and Kangnung showed 196.6, 161.8, 221.9, $171.5mWm^{-2}\;and\;179.7mWm^{-2}$ near noon in July respectively. The annual mean value of the daily accumulated EUV-B irradiance in Pohang, Anmyeon, Gosan, Mokpo and Kangnung were 1.8, 2.1, 2.2, $1.8kJm^{-2}\;and\;1.5kJm^{-2}$ respectively. The UV Index (UVI) showed above UVI 7(High) more than 90 days during one year over the Korean Peninsula.

• 반도체디스플레이기술학회지
• /
• 제15권1호
• /
• pp.6-11
• /
• 2016

For high volume manufacturing using extreme ultraviolet (EUV) lithography, mask protection from contamination during lithography process must be solved, and EUV pellicle is the strongest solution. Based on the technical requirements of EUV pellicle, EUV pellicle should have large membrane area ($110{\times}140mm^2$) with film transmittance over 90% and mechanical stability. Even though pellicle that satisfies size standard with high transmittance has been reported, its mechanical stability has not been confirmed, nor is there a standard to evaluate the mechanical stability. In this study, we suggest a rather simple method evaluating mechanical stability of pellicle membrane using spin-coater which can emulate the linear accelerated motion. The test conditions were designed by simulating the acceleration distribution inside pellicle membrane through correlating the linear acceleration and centripetal acceleration, which occurs during linear movement and rotation movement, respectively. By these simulation results, we confirmed the possibility of using spin-coater to evaluate the mechanical stability of EUV pellicle.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.65-65
• /
• 2010

Extreme ultraviolet lithography (EUVL) is expected to be applied for making patterns below 32 nm in device industry. An ultrathin EUV photoresist (PR) of a few nm in thickness is required to reduce minimum feature size further. Here, we show that pentacene molecular layers can be employed as a new EUV resist for the first time. Dots and lines in nm scale are successfully realized using the new molecular resist. We clearly provide the mechanism for forming the nanopatterns with scanning photoemission microscope (SPEM), EUV interference lithography (EUV-IL), atomic force microscope (AFM), photoemission spectroscopy (PES), etc. The molecular PR has several advantages over traditional polymer EUV PRs; for example, high thermal/chemical stability, negligible outgassing, ability to control the height and width on the nanometer scale, leaving fewer residuals, no need for a chemical development process and thus reduction of chemical waste to make the nanopatterns. Besides, it could be applied to any substrate to which pentacene bonds chemically, such as $SiO_2$, SiN, and SiON, which is of importance in the device industry.

• 천문학회보
• /
• 제44권1호
• /
• pp.81.2-81.2
• /
• 2019

We develop an image-to-image translation model, which is a popular deep learning method based on conditional Generative Adversarial Networks (cGANs), to generate solar magnetograms and EUV images from sunspot drawings. For this, we train the model using pairs of sunspot drawings from Mount Wilson Observatory (MWO) and their corresponding SDO/HMI magnetograms and SDO/AIA EUV images (512 by 512) from January 2012 to September 2014. We test the model by comparing pairs of actual SDO images (magnetogram and EUV images) and the corresponding AI-generated ones from October to December in 2014. Our results show that bipolar structures and coronal loop structures of AI-generated images are consistent with those of the original ones. We find that their unsigned magnetic fluxes well correlate with those of the original ones with a good correlation coefficient of 0.86. We also obtain pixel-to-pixel correlations EUV images and AI-generated ones. The average correlations of 92 test samples for several SDO lines are very good: 0.88 for AIA 211, 0.87 for AIA 1600 and 0.93 for AIA 1700. These facts imply that AI-generated EUV images quite similar to AIA ones. Applying this model to the Galileo sunspot drawings in 1612, we generate HMI-like magnetograms and AIA-like EUV images of the sunspots. This application will be used to generate solar images using historical sunspot drawings.

• Journal of Astronomy and Space Sciences
• /
• 제20권4호
• /
• pp.327-338
• /
• 2003

본 논문은 인공위성에 탑재될 것을 감안한 극자외선 태양망원경의 제작을 통한 연구 결과를 기술한다. 극자외선은 지상에서는 관측되지 않는 영역으로 인공위성이나 로켓 등에 탑재되어 관측하게 된다. 본 연구의 극자외선 태양망원경(EUVT; Extreme-Ultra-Violet solar Telescope)의 설계는 '인공위성 탑재용 극자외선 태양망원경 공학모형 설계'(한정훈 등 2001)를 기반으로 인공위성에 탑재할 만한 크기와 위성 입력전압에 따른 전자부 설계 등 기본적인 요구사항에 맞추었으며, 특히 EVUT의 관측 파장대인 58.4㎚에서 62.9㎚의 검출 가능성에 중점을 두었다. 본 논문에서는 부경으로 인한 차폐율을 줄이기 위한 광학계 설계 변경과 공학모형(Engineering Model)을 제작하는데 사용된 검출기와 광학 기술에 대해 논의한다. 또한, EUVT의 검출기가 받는 태양 복사량을 산출하기 위한 검출효율 프로그램과 차후 관측 자료 처리에 대해 기술한다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.210-210
• /
• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.