• Polymer(Korea)
• /
• v.34 no.4
• /
• pp.376-380
• /
• 2010

Donor-$\pi$-acceptor (D-$\pi$-A) type chromophore-based polymers were newly synthesized. These polymers exhibited absorption peak due to intramolecular charge transfer (ICT) in a visible range as well as absorption peak due to carbonyl group in both solution and film state by measuring UV visible spectra. The addition of $Eu^{3+}$ ion into the polymers induced red-shift in absorption due to ICT and the color changes from yellow to red in the solution and film were observed by naked eyes. The contents of crosslinking agent influenced the features and solubility of the polymers. In addition, the contents of crosslinking agent and the $Eu^{3+}$ ion addition improved film-forming ability.

• Journal of Surface Science and Engineering
• /
• v.56 no.3
• /
• pp.201-207
• /
• 2023

Eu³⁺-doped SnO² (SnO²:Eu³⁺) phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering. The deposition temperature was varied from 100 to 400 ℃. The X-ray diffraction patterns showed that all the thin films had two mixed phases of SnO₂ and Eu₂Sn₂O₇. The 880 nmthick SnO²:Eu³⁺ thin film grown at 100 ℃ exhibited numerous pebble-shaped particles. The excitation spectra of SnO²:Eu³⁺ thin films consisted of a strong and broad peak at 312 nm in the vicinity from 250 to 350 nm owing to the O^2--Eu3+ charge transfer band, irrespective of deposition temperature. Upon 312 nm excitation, the SnO²:Eu³⁺ thin films showed a main emission peak at 592 nm arising from the ⁵D₀→⁷F₁ transition and a weak 615 nm red band originating from the ⁵D₀→⁷F₂ transition of Eu³⁺. As the deposition temperature increased, the emission intensities of two bands increased rapidly, approached a maximum at 100 ℃, and then decreased slowly at 400 ℃. The thin film deposited at 200 ℃ exhibited a band gap energy of 3.81 eV and an average transmittance of 73.7% in the wavelength range of 500-1100 nm. These results indicate that the luminescent intensity of SnO²:Eu³⁺ thin films can be controlled by changing the deposition temperature.

• Bulletin of the Korean Chemical Society
• /
• v.16 no.5
• /
• pp.389-391
• /
• 1995

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.581-584
• /
• 2008

$BaMgP_2O_7$:Eu,Mn phosphors for white emission were synthesized and their luminescent properties were investigated under UV excitation. The phosphor emits two colors: a blue band by $Eu^{2+}$ and a red band by $Mn^{2+}$. Due to the efficient energy transfer from $Eu^{2+}$ to $Mn^{2+}$, the red emission positioned at 615 nm is greatly enhanced with increasing $Mn^{2+}$ content up to 17.5 mol%.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.257-259
• /
• 2002

As a new host material for a red phosphor for PDP applications, has studied (Y,Gd)$Al_3(BO_3)_4$ which gives non-centrosymmetric sites for $Eu^{3+}$ activators. Vacuum ultraviolet (VUV) excitation spectrum of new red phosphor (Y,Gd)$Al_3(BO_3)_4$:$Eu^{3+}$ has two broad bands. One band with the absorption edge at ca. 168 nm is the band-gap absorption of aluminoborate and the other broad band centered 240 nm is the charge transfer transition between $Eu^{3+}$ and the neighboring oxygen anions. The PL spectrum shows the strongest emission at 617 nm due to the electric dipole $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$, whose luminescent chromaticity is (0.67, 0.33).

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1303-1304
• /
• 2009

In order to apply to the White light emitting diodes (WLEDs), The $Y_2SiO_5:Eu^{3+}$ as red phosphor was synthesized by solid state reaction method. The highest emission of $Y_2SiO_5:Eu^{3+}$ was shown when the $Eu^{3+}$ concentration was 0.02. A single phase was observed from X-ray diffraction (XRD) analysis of synthesized samples and secondary phase wasn't found.

• Bulletin of the Korean Chemical Society
• /
• v.15 no.12
• /
• pp.1050-1054
• /
• 1994

Eu(Ⅲ) exhibits one electron-transfer reduction at E$_{1/2}$ =-0.617 V vs. Ag/AgCl and the hypersensitive peak at 618 nm corresponding to $^5D_0$ ${\leftrightarro}$ $^7F_2$ transition in 0.10 M LiClO$_4$ aqueous solutions. Upon the addition of carboxylate or sulfonate anions to the Eu(Ⅲ) aqueous solutions, the reduction potential shifts negatively and the reduction current decreases because of the complex formation between Eu(Ⅲ) ions and the anions. However, for the case of carboxylate anion (acetate or propionate) the shift of reduction peak potential and the emission intensity at 618 nm are greater. The results are interpreted in terms of the differences in the formation constants and the hypersensitivity.

• Applied Science and Convergence Technology
• /
• v.26 no.2
• /
• pp.26-29
• /
• 2017

Thin films of europium-doped yttrium oxide ($Y_2O_3$:Eu) were prepared on Si (100) substrates by using a radio frequency (RF) magnetron sputtering. After the deposition, the films were annealed at $1000^{\circ}C$ in an air ambient for 1 hour. X-ray diffraction analysis revealed that the $Y_2O_3$:Eu films had a polycrystalline cubic ${\alpha}-Y_2O_3$ structure. The as-deposited films showed no photoluminescence (PL), which was due to poor crystalline quality of the films. The crystallinity of the $Y_2O_3$:Eu films was significantly improved by annealing. The strong red PL emission was observed from the annealed $Y_2O_3$:Eu films and the highest intensity peak was centered at around 613 nm. This emission peak originated from the $^5D_0{\rightarrow}^7F_2$ transition of the trivalent Eu ions occupying the $C_2$ sites in the cubic ${\alpha}-Y_2O_3$ lattice. The broad PL excitation band was observed at wavelengths below 280 nm, which was attributed to the charge transfer transition of the trivalent Eu ion.

• Journal of Sensor Science and Technology
• /
• v.6 no.1
• /
• pp.16-23
• /
• 1997

Bismuth germanate crystals well known as scintillator were grown by Czochralski method. In order to understand a mechanism of radiation resistance in Eu-doped BGO, we measured radiation induced-absorption spectra, excitation spectra, emission spectra and luminescence lifetimes of BGO crystals. We found that the charge transfer state of $Eu^{3+}$ ion is to play a key role to enhance the radiation resistance in BGO crystal. The $^{5}D_{0}$ emission of $Eu^{3+}$ ions that is not suitable for the radiation detectors due to a long decay time was found to be increased with increasing europium concentration. In the BGO crystal doped with 0.1 mole%, the density of radiation induced color centers was reduced about twenty times and the light output of $^{5}D_{0}$ was negligible by comparing to that of BGO.

• Korean Journal of Materials Research
• /
• v.18 no.11
• /
• pp.623-627
• /
• 2008

For possible applications as luminescent materials for white-light emission using UV-LEDs, $Ba_2Mg(PO_4)_2:Eu^{2+}$ phosphors were prepared by a solid state reaction. The photoluminescence properties of the phosphor were investigated under ultraviolet ray (UV) excitation. The prepared phosphor powders were characterized to from a single phase of a monoclinic crystalline structure by a powder X-ray diffraction analysis. In the photoluminescence spectra, the $Ba_2Mg(PO_4)_2:Eu^{2+}$ phosphor showed an intense emission band centered at the 584 nm wavelength due to the f-d transition of the $Eu^{2+}$ activator. The optimum concentration of $Eu^{2+}$ activator in the $Ba_2Mg(PO_4)_2$ host, indicating the maximum emission intensity under the excitation of a 395 nm wavelength, was 5 at%. In addition, it was confirmed that the $Eu^{2+}$ ions are substituted at both $Ba^{2+}$ sites in the $Ba_2Mg(PO_4)_2$ crystal. On the other hand, the critical distance of energy transfer between $Eu^{2+}$ ions in the $Ba_2Mg(PO_4)_2$ host was evaluated to be approximately 19.3 A. With increasing temperature, the emission intensity of the $Ba_2Mg(PO_4)_2$:Eu phosphor was considerably decreased and the central wavelength of the emission peak was shifted toward a short wavelength.