• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.11b
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• pp.76-85
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• 2005

The conceptual study of Accelerator Driven System (ADS) had lasted for about five years and ended in 1999 in China. As one project of 'the major state basic research program (973)' in energy domain, which is sponsored by the China Ministry of Science and Technology (MOST), a five years program of basic research for ADS physics and related technology has been launched since 2000 and passed national review last month. CIAE (China Institute of Atomic Energy), IHEP (Institute of High Energy Physics), PKU-IHIP (Institute of Heavy Ion Physics in Peking University) and other institutions are jointly carrying on the research. The research activities are focused on HPPA physics and technology, reactor physics of external source driven sub-critical assembly, nuclear data base and material study. For HPPA, a high current injector consisting of an ECR ion source, LEBT and a RFQ accelerating structure of 3.5MeV has been built. In reactor physics study, a series of neutron multiplication experimental study has been carried out and is being carrying on. The VENUS facility has been constructed as the basic experimental platform for the neutronics study in ADS blanket. It's a zero power sub-critical neutron multiplying assembly driven by external neutron produced by a pulsed neutron generator. The theoretical, experimental and simulation study on nuclear data, material properties and nuclear fuel circulation related to ADS is carrying on to provide the database for ADS system analysis. The main results on ADS related researches will be reported.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Journal of the Korean Magnetics Society
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• v.23 no.2
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• pp.43-48
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• 2013

The Jahn-Teller distortion of chalcogenide $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) have been investigated by M$\ddot{o}$ssbauer spectroscopy. The crystal structures of $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) are cubic spinel at room temperature. Magnetoresistance measurements indicate these system is conducting-semiconducting transistion around $T_C$. Below $T_C$, the asymmetric line broadening is observed and considered to be dynamic Jahn-Teller distortion. Isomer shift value of the samples at room temperature was about 0.5 mm/s, which means that charge state of Fe ions is ferrous in character. The Ni substitutions for Fe occur to increase the Jahn-Teller relaxation. CMR properties could be explained with magnetic polaron due to Jahn-Teller effect, which is different from both the double exchange interactions of manganite system and the triple exchange interactions of chalcogenide $Cu_xFe_{1-x}Cr_2S_4$.