• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.143-143
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.24-25
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.44-44
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.11-11
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• 1998

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.203-210
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• 2004

Effects of various pretreatments on the adhesion of copper-coated polymer films were investigated. Copper-coated polymer films were prepared by an electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a DC bias system at room temperature. PET(polyethylene terephthalate) film was employed as a substrate material and it was pretreated by industrially feasible methods such as chromic acid, sand-blasting, oxygen plasma and ion-implantation treatment. Surface characterization of the copper-coated polymer film was carried out by AFM(Atomic Force Microscopy) and FESEM(Field Emission Scanning Electron Microscopy). Surface energy was calculated by based on the value of the contact angle measured. The adhesion of copper/PET films was determined by a pull-off test according to ASTM D-5179. It was found that suitable pretreatment of the PET substrate was required for obtaining good adhesion property between copper films and the substrate. In this study the highest adhesion was observed in sand-blasting, and then followed by those of acid and oxygen plasma treatment. However, the effect of surface energy was insignificant in our experimental range. This is probably due to compensating the difference in surface energy from various pretreatments by exposing substrate to ECR plasma for 5 min or longer at the early stage of the copper deposition. Therefore, it can be concluded that surface roughness of the polymer substrate plays an important role to determine the adhesion of copper-coated polymer for the deposition of copper by ECR-MOCVD.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.119-126
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• 2001

Hydrogenated amorphous carbon (a-C:H) films were deposited by ECR-PECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition) method with deposition conditions such as ECR plasma source power, gas composition of methane and hydrogen, deposition time and substrate bias voltage. The hydrogen content in the films has been measured by ERDA (elastic recoil detection analysis) using 2.5 MeV $He^{++}$ ion beam. From the results of AES (Auger electron spectroscopy), RBS (Rutherford backscattering spectrometry) and ERDA, the composition elements of deposited film were confirmed the carbon atom and the hydrogen atom. It was observed by FTIR (Fourier transform infrared) that the hydrogen contents in the film varied according to the deposition conditions. In deposition condition of substrate bias voltage, the hydrogen contents were decreased remarkably because the amount of dehydrogenation in films was increased as the substrate bias voltage increased. In the rest deposition conditions, the hydrogen contents in the film were measured in the range 45~55%.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.382-388
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• 2000

Hydrogenated amorphous carbon (a-C:H) films were fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The bonding structure of carbon and hydrogen in the a-C:H films has been investigated by varying the deposition conditions such as ECR power, gas composition of methane and hydrogen, deposition time, and negative DC self bias voltage. The bonding characteristics of the a-C:H thin film were analyzed using FTIR spectroscopy. The IR absorption peaks of the film were observed in the range of $2800\sim3000 \textrm{cm}^{-1}$. The atomic bonding structure of a-C:H film consisted of $sp^3$ and $sp^2$ bonding, most of which is composed of $sp^3$ bonding. The structure of the a-C:H films changed from $CH_3$ bonding to $CH_2$ or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.233-233
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• 2011

ECR 이온원을 가볍고 작게 하면서 운전을 단순화함으로써 유지보수를 최소화하는 것은 특히 의료용 중입자 가속기에서 매우 중요한 조건 중 하나가 된다. 탄소 다가 이온을 만들어내기 위한 의료용 중입자가속기의 이온원으로 영구자석형 ECR 이온원을 개념 설계하였다. 영구자석은 이온원 입출구에서 강력한 축방향 자장을 만들기 위한 솔레노이드 자석 두 개와 반경방향 자장을 만들어 주기 6극 자석으로 구성된다. 또한 축방향 자장 흐름을 효과적으로 만들어주기 위한 두 개의 링 형 자석을 추가하여 자장의 강도를 높였다. 그러나 영구자석으로만 만들어진 자장 구조는 제작과 동시에 고정이 되어 수정이 불가능하기 때문에 제작 후 매우 제한적인 운전영역을 가질 뿐 만 아니라 최악의 경우에는 운전조건을 찾지 못하는 경우도 발생할 수 있다. 따라서 본 설계에서는 그림과 같이 두 개의 작은 보조 솔레노이드 전자석을 추가하여, 최소한의 운전조건으로 ECR 이온원의 공명영역을 결정하는 최소 자장의 구조뿐만 아니라 축방향 자장의 세기도 각각 능동적으로 제어할 수 있도록 하였다. 또한 마이크로파원으로는 TWT (Traveling Wave Tube)를 사용하여 10 GHz에서 14 GHz 까지 다양한 주파수에서 운전이 가능할 수 있도록 설계하였다. 이러한 설계를 통하여 다양한 운전조건을 가질 수 있는 안정된 ECR 이온원을 부피가 작으면서도 유지보수를 최소화하는 구조로 만들 수 있으며, 본 이온원은 탄소 다가 이온을 만들어내기 위한 목적뿐 만 아니라 다양한 중이온을 작은 규모로 만들어내기 위한 장치에서도 사용될 수 있다.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.149-155
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• 2015

The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.212-217
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• 2000

Dielectric thin films for TFT(thin film transistor)s, such as silicon nitride$(Si_3N_4)$ and silicon oxide$(SiO_2)$, are usually deposited at $200~300^{\circ}C$. In this study, authors have tried to form dielectric films not by deposition but by oxidation with ECR(Electron Cyclotron Resonance) oxygen plasma, to improve the interface properties was not intensionally heated during oxidation. THe oxidation was performed consecutively without breaking vacuum after the deposition of a-Si: H films on the substrate to prevent the introduction of impurities. In this study, especially pulse mode of microwave power has been firstly tried during FCR oxygen plasma formation. Compared with the case of the continuous wave mode, the oxidation with the pulsed ECR results in higher quality silicon oxide$SiO_X$ films in terms of stoichiometry of bonding, dielectric constants and surface roughness. Especially the surface roughness of the pulsed ECR oxide films dramatically decreased to one-third of that of the continuous wave mode cases.