• Title/Summary/Keyword: E-beam

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Ion Beam Assisted Deposition System의 제작 및 자동화

  • 손영호
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.27-27
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    • 1998
  • 진공기술의 응용과 진공환경의 이용은 더 이상 논하지 않더라도 산업 전반에 그 충요성이 점점 더 커가고 있다. 이러한 여건에도 불구하고 진공율 이용하는 system 개밟의 국산화는 수 입하는 system으$\mid$ 수에 비하여 절대적으로 부족하며, 또한 개발하는 system의 자동화는 거의 이 루어지지 않고 있으며, 자동화된 진공판련 system은 거의 대부분 수입에 의흔하고 있다. 실험 실 규모에서부터 System올 하나하나 개밭하고, 이톨 자동화하는 노력과 일이 진행됨다면 산업 응용에 있어서도 자연스럽게 자동화된 system으$\mid$ 개발이 이루어 질 것이다 .. system 자동화는 상 품수명의 단축과 이에 따른 다품종 소량을 요구하는 시장수요에 대응하고, 인력절감과 고풀짙 화로 생산성 향상의 요구에 대응하기 위하여 필요하다. 본 연 구에 서 는 e-beam evaporator로 evaporation하면 서 ion beam으로 assist하여 thin film율 제 작하는 IBAD vacuum system율 싫 계 및 제 작하고[1,2], PLC[3,떼톨 이 용하여 system 자동화톨 하였다 .. thin film 제작 process는 먼저 기본 진공상태로 만뚫고 난 뒤, e-beam evaporator로 e evaporation하면서 ion beam source로 assist하여 substrate 011 thin film율 제조한다 226;. thin film올 제 조하면서 thickness monitor로 sample의 thickness rate톨 control 하고, sample의 균얼성과 밀착 성을 고려하여 substrate톨 rotation 및 heating 할 수 있도록 싫계, 제작하였다. 양질의 박막올 제조하기 위해서 진공환경이 좋은 상태로 제공되어야 한다. 이톨 위하여 oil free operation 0 I 가 능한 dry pump와 turbo molecular pump로 고진공 배기 하였다. 진공도의 흑점은 thermal effect 툴 고려하여 cold cathode ion gauge률 사용하였고, intro chamber와 main chamber 사이에는 g gate valve톨 설치하여 벌도로 운용되도록 하였다. 이러한 process를 박막의 두께, 진공도, 시 간, 온도, 공정 동의 조건올 기훈으로 자동화한 것이다. 또한 정전과 단수에 대한 interlock 기능 도 고려하였다.하였다.

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Characteristics of Charge Accumulation in Glass Materials under E-Beam Irradiation (E-빔 조사하에서 유리의 전하축퇴 특성)

  • Choi, Yong-Sung;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.377-378
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    • 2008
  • Space charge formation in various glass materials under electron beam irradiation was investigated. Charging of spacecraft occurs in plasma and radiation environment. Especially, we focused on an accident caused by internal charging in a glass material that was used as the cover plate of solar panel array, and tried to measure the charge distribution in glass materials under electron beam irradiation by using a PEA (Pulsed Electro-Acoustic method) system. In the case of a quartz glass (pure $SiO_2$), no charge accumulation was observed either during or after the electron beam irradiation. On the contrary, positive charge accumulation was observed in glass samples containing metal-oxide components. It is found that the polarity of the observed charges depends on the contents of the impurities. To identify which impurity dominates the polarity of the accumulated charge, we measured charge distributions in several glass materials containing various metal-oxide components and calculated the trap energy depths from the charge decay characteristics of all glass samples. Furthermore, the dependence of the polarity of accumulated charges on the component of glass materials is discussed by using the models of energy bands.

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Decay Process of Charge Distribution in E-beam Irradiated Polymers (전자빔 조사 폴리머의 전자 분포의 축퇴 과정)

  • Choi, Yong-Sung;Kim, Hyung-Gon;Hwang, Jong-Sun;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04c
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    • pp.69-72
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    • 2008
  • Decay processes of accumulated charge in e-beam irradiated polymers during elevating temperature are observed using pulsed electro-acoustic measurement system. Since the polymeric materials have many superior properties such as light-weight, good mechanical strength, high flexibility and low cost, they are inevitable materials for spacecrafts. In space environment, however, the polymers sometimes have serious damage by irradiation of high energy charged particles. When the polymers of the spacecraft are irradiated by high energy charged particles, some of injected charges accumulate and remain for long time in the bulk of the polymers. Since the bulk charges sometimes cause the degradation or breakdown of the materials, the investigation of the charging and the decay processes in polymeric materials under change of temperature is important to decide an adequate material for the spacecrafts. By measuring the charge behavior in e-beam irradiated polymer, such as polyimide or polystyrene, it is found that the various accumulation and decay patterns are observed in each material. The results seem to be useful and be helpful to progress in the reliability of the polymers for the spacecraft.

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탄소 음이온 빔에 의해 증착된 DLC 필름의 특성 평가

  • 김인교;김용환;이덕연;최동준;한동원;백홍구
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.59-59
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    • 1999
  • DLC(diamond-like carbon)필름은 다이아몬드와 유사한 강도, 낮은 마차계수, 높은 Optical band gap, NEA(negative electron affinity)등의 우수한 특성을 가지고 있어, 내마모 코팅이나 정보저장 매체의 윤활 코팅, FED(field emission display)의 전계방출소자등 다양한 분야에의 응용이 연구되고 있다. DLC 필름은 PECVD(plasma enhanced chemical vapor deposition), IBAD(ion beam assisted deposition), Laser ablation, Cathodic vacuum arc등의 process를 이용하여 증착되고 있다. 특히 이러한 필름의 물성은 입사되는 이온의 에너지에 의해 좌우되는데, Lifshitz 등의 연구에 의하여 hyperthermal species를 이용한 DLC 필름의 성장은 초기에 subsurface로의 shallow implantation이 일어난 후 높은 sp3 fraction을 갖는 필름이 연속적으로 성장한다는 subplantation model이 제시 되었다. 본 연구에서는 기판과 subplantation 영역이 이후 계속하여 증착되는 순수 DLC 필름의 특성 변호에 미치는 영향에 대하여 관심을 가지고 실험을 행하였다. 본 실험에서는 상기 제시되어 있는 방법보다도 더욱 정확하고도 독립적으로 탄소 음이온의 에너지와 flux를 조절할 수 있는 Cs+ ion beam sputtering system을 이용하여 탄소 음이온의 에너지를 40eV에서 200eV까지 변화시키며 필름을 증착하였다. Si(100) 웨이퍼를 기판으로 사용하였고 증착 압력은 5$\times$10-7torr 였으며 인위적인 기판의 가열은 하지 않았다. 또한 Ion beam deposited DLC film의 growth process를 연구하기 위하여 200eV의 탄소 음이온을 시간(증착두께)을 변수로 하여 증착하였고, 이 때에는 Kaufman type의 gas ion beam을 이용하여 500eV의 Ar+ ion으로 pre-sputering을 행하였다. 탄소 음이온의 에너지와 증착두께에 따라 증착된 film 내의 sp3/sp2 ratio 의 변화를 XPS plasmon loss 와 Raman spectra를 이용하여 분석하였다. 또한 증착두께에 따른 interlayer의 결합상태를 관찰하기 위하여 AES와 XPS 분석을 보조로 행하였다.

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E-beam evaporation을 이용하여 Si 기판위에 다양한 각도에 따라 성장된 $SiO_2$ 박막특성연구

  • Kim, Myeong-Seop;Lee, Hui-Gwan;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.255-255
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    • 2011
  • $SiO_2$는 유전체 물질로서 고온에 강하고 열 변화에 민감하지 않으며 자외선을 잘 투과시키는 특성 때문에 각종 광전자 소자에 많이 응용되고 있다. 최근에는 classical thermal oxidation 방식을 이용하여 태양전지의 효율을 증가하기 위한 표면 보호막, 유기발광다이오드의 보호막 및 barrier로 적용되고 있다. $SiO_2$ 박막의 경우 RF-DC sputtering, thermal evaporation, plasma enhanced chemical vapor deposition, E-beam evaporation 등의 다양한 방법을 통하여 제작되고 있다. 이들 중 E-beam evaporation 법은 높은 증착속도, 증착방향성, 낮은 불순물농도 등 많은 장점을 가지고 $SiO_2$ 박막 증착이 가증하다. 따라서 본 연구에서는 Si 기판위에 $SiO_2$를 증착각도를 0$^{\circ}$, 25$^{\circ}$, 50$^{\circ}$, 70$^{\circ}$로 변화시켜 증착하였고, 증착속도, 빔 세기, 기판 회전속도 등을 변화시켰다. 또한, 증착 각도에 따른 유전율 차이를 무반사 특성 향상에 응용하기 위해 다양한 layer 층을 순차적으로 성장시켰다. 제작된 $SiO_2$의 나노구조의 구조적, 광학적 특성은 field emission scanning microscopy, atomic force microscopy, UV-VIS-NIS spectrophotometer를 이용하여 분석되었다.

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Photocatalytic activities and surface properties of e-beam treated carbon paper deposited $TiO_2$ using Atomic Layer Deposition (ALD)

  • Kim, Myoung-Joo;Seo, Hyun-Ook;Luo, Yuan;Kim, Kwang-Dae;Kim, Young-Dok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.345-345
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    • 2010
  • Thin film of $TiO_2$ deposited on carbon paper was fabricated by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and $H_2O$ as precursors. In this work, the photocatalytic activities of $TiO_2$ films with and without e-beam treatment were compared. The samples were treated by e-beam using e-beam energy of 1MeV and exposure range between 5 and 15kGy. The photocatalytic activity was evaluated by the photocatalytic degradation of methyleneblue (MB) under UV irradiation (365nm) at room temperature using an UV-vis spectroscopy. The surface properties were characterized by scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The sample treated by the low radiation dose has more catalytic activity than other ones. SEM images show that the high radiation dose caused the $TiO_2$ to aggregation on carbon paper. Due to the aggregation of $TiO_2$, the partially exposed carbon paper was oxidized.

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Influence of the degradation of MgO protective layer on the Surface profiles and discharge characteristics in AC-PDP.

  • Lee, Soo-Beom;Jeoung, J.M.;Ko, B.D.;Oh, P.Y.;Moon, M.W.;Lee, J.H.;Lim, J.E.;Lee, H.J.;Han, Y.G.;Yoo, N.L.;Jeoung, S.H.;Son, C.G.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1207-1210
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    • 2005
  • The MgO protective layer provides protection from the discharge, lowers the discharge voltage and prolongs the AC-PDP lifetime. We have investigated the characteristics of degradation of MgO protective layer, which correlates to the image-sticking[1] and the lifetime in AC-PDP. The degraded MgO have been changed the surface morphology of MgO. It was found that panel lifetime depended on degradation of MgO protective.

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Studies on the Synthesis of Aminated PP-g-GMA Fibrous ion Exchanger by E-beam Pre-irradiation and Their Properties of Selective Adsorption for $NO_{3} ^{-}$ (E-beam 전조사에 의한 $NO_{3} ^{-}$ 선택 흡착용 아민화 PP-g-GMA 섬유 이온교환체의 합성과 그 특성에 관한 연구)

  • 황택성;이선아;이면주
    • Polymer(Korea)
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    • v.26 no.2
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    • pp.153-159
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    • 2002
  • In order to remove $NO_3;^-$ ion from ground-water, fibrous ion -exchangers, APP-g-GMA, were synthesized by GMA grafting onto PP trunk polymer with E-beam accelerator for pre-irradiation. Their degrees of grafting and amination yield increased up to $60^{\circ}C$ and showed maximum values as 133%, 88%, respectively. And their swelling ratio and ion exchange capacity at the maximum values are 86%, 2.5 meq/g, respectively which was higher than commercial ion-exchangers such as IMAC HP555 and Amberlite IRA 400. Optimum adsorption condition of $NO_3;^-$ ion was measured at pH 5~6 and -Cl form of APP-g-GMA containing trimethylammonium group showed the highest adsorption capacity.

Synthesis of SAPP-g-(AN/St) Fibrous Ion-Exchanger by E-beam Pre-irradiation and Their Adsorption Properties for Uranium Ion (E-beam 전조사법에 의한 SAPP-g-(AN/St) 섬유상 이온교환체의 합성 및 우라늄 흡착특성)

  • Hwang, Taek-Sung;Park, Jin-Won;Kim, Kwang-Young
    • Polymer(Korea)
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    • v.25 no.1
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    • pp.49-55
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    • 2001
  • The bi-functional ion exchangers, SAPP-g-(AN/St) were synthesized with mixed vinyl monomers(acrylonitrile and styrene) onto PP fabric by the pre-irradiation grafting with E-beam and its subsequent amidoximination and sulfonation. The degree of grafting of PP-g-(AN/St) was increased with decreasing acrylonitrile composition in the mixed monomers. The water uptake of copolymers increased with decreasing in the amidoxime ratio in the copolymers and increased by sulfonation, but decreased by amidoximation. The $UO_2^{2+}$ adsorption capacity of SPP-g-St, APP-g-AN, and SAPP-g-(AN/St) were 12.4, 34.0, and 38.0 mg/g, respectively and the optimum adsorption time is about 50 hrs. As a result of uranium adsorption, the synthesized ion exchanger, which we obtained have also good affinity toward the adsorption or chelating with $UO_2^{2+}$ ions.

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Indium Tin Oxide Based Reflector for Vertical UV LEDs (자외선 수직형 LED 제작을 위한 Indium Tin Oxide 기반 반사전극)

  • Jung, Ki-Chang;Lee, Inwoo;Jeong, Tak;Baek, Jong Hyeob;Ha, Jun-Seok
    • Korean Journal of Materials Research
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    • v.23 no.3
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    • pp.194-198
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    • 2013
  • In this paper, we studied a p-type reflector based on indium tin oxide (ITO) for vertical-type ultraviolet light-emitting diodes (UV LEDs). We investigated the reflectance properties with different deposition methods. An ITO layer with a thickness of 50 nm was deposited by two different methods, sputtering and e-beam evaporation. From the measurement of the optical reflection, we obtained 70% reflectance at a wavelength of 382 nm by means of sputtering, while only 30% reflectance resulted when using the e-beam evaporation method. Also, the light output power of a $1mm{\times}1mm$ vertical chip created with the sputtering method recorded a twofold increase over a chip created with e-beam evaporation method. From the measurement of the root mean square (RMS), we obtained a RMS value 1.3 nm for the ITO layer using the sputtering method, while this value was 5.6 nm for the ITO layer when using the e-beam evaporation method. These decreases in the reflectance and light output power when using the e-beam evaporation method are thought to stem from the rough surface morphology of the ITO layer, which leads to diffused reflection and the absorption of light. However, the turn-on voltage and operation voltage of the two samples showed identical results of 2.42 V and 3.5 V, respectively. Given these results, we conclude that the two ITO layers created by different deposition methods showed no differences in the electric properties of the ohmic contact and series resistance.