• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1181-1187
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• 2013

Water-dispersible ZnS:Mn nanocrystals were synthesized by capping the surface of the nanocrystal with O-(2-Aminoethyl)polyethylene glycol (PEG-$NH_2$, Mw = 10,000 g/mol) and O-(2-Carboxyethyl)polyethylene glycol (PEG-COOH, Mw = 10,000 g/mol) molecules. The modified PEG capped ZnS:Mn nanocrystal powders were thoroughly characterized by XRD, HR-TEM, EDXS, ICP-AES and FT-IR spectroscopy. The optical properties were also measured by UV/Vis and photoluminescence (PL) spectroscopies. The PL spectra showed broad emission peaks at 600 nm with similar PL efficiencies of 7.68% (ZnS:Mn-PEG-NH2) and 9.18% (ZnS:Mn-PEG-COOH) respectively. The measured average particle sizes for the modified PEG capped ZnS:Mn nanocrystals by HR-TEM images were 5.6 nm (ZnS:Mn-PEG-NH2) and 6.4 nm (ZnS:Mn-PEG-COOH), which were also supported by Debye-Scherrer calculations. In addition, biological toxicity effects of the nanocrystals over the growth of wild type E. coli were investigated. They showed no biological toxicity to E. coli until very high concentration dosage of 1 mg/mL of the both nanocrystal samples.

• Analytical Science and Technology
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• v.36 no.5
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• pp.216-223
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• 2023

Aluminium (Al) is one of the major elements in rocks and its concentration can be varied, depending on different rock types as well as sources. The present study aimed to propose an analytical method based on the UV-Vis as a cheap, simple, and common instrument equipped in most laboratories for Al quantification in rocks after the microwave assisted acid digestion. The aluminone and 8-hydroxyquinoline were investigated for the colorimetric assay. The results show that the 8-hydroxyquinoline reagent was more favorable in terms of the minimized affects of the potential interferences present in the digested solutions, i.e., Fe³⁺, Si⁴⁺ and F^-. The calibration curve was constructed from 0.10 mg/L to 3.00 mg/L with the goodness of linearity (R² = 0.9996). The limits of detection and quantification (LOD and LOQ) were estimated, i.e., 0.029 mg/L and 0.087 mg/L, respectively. The 8-hydroxyquinoline was applied to real rock samples, demonstrating favorable precision (RSD = 0.34 %-1.8 %) and no remarkable differences were found compared to the inductively coupled plasma-mass spectrometry (ICP-MS) as a reference measurement approach.

• The Journal of Korean Academy of Prosthodontics
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• v.36 no.2
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• pp.203-244
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• 1998

The human mandible is always under the condition of loading by the various forces extorted by the attached muscles. The loading is an important condition of the stomatognathic system. This condition is composed of the direction and amount of forces of the masticatory muscles, which are controlled by the neuromuscular system, and always influenced by the movement of both opening and closing. Mandible is a strong foundation for the teeth or various prostheses, nevetheless it is a elastic body which accompanies deformation by the external forces on it. The elastic properties of the mandible is influenced by the various procedures such as conventional restorative treatments, osseointegrated implant treatments, reconstructive surgical procedures and so forth. Among the treatments the osseointegrated implant has no periodontal ligaments, which exist around the natural teeth to allow physiologic mobility in the alveolar socket. And so around the osseointegrated implant, there is almost no damping effect during the transmission of occlusal stress and displacements. If the osseointegrated implants are connected by the superstructure for the stabilization and effective distribution of occlusal stresses, the elastic properties of mandible is restricted according to the extent of 'splinting' by the superstructure and implants. To investigate the change of elastic behaviour of the mandible which has osseointegrated implant prosthesis of various numbers of implant installment and span of superstructre, a three dimensional finite element model was developed and analyzed with conditions mentioned above. The conclusions are as follows : 1. The displacements are primarily developed at the area of muscle attachment and distributed all around the mandible according to the various properties of bone. 2. The segmentation in the superstructure has few influence on the distribution of stress and displacement. 3. In the load case of ICP, the concentration of tensional stress was observed at the anterior portion of the ramus($9.22E+6N/m^2$) and at the lingual portion of the symphysis menti($8.36E+6N/m^2$). 4. In the load case of INC, the concentration of tensional stress was observed at the anterior portion of the ramus($9.90E+6N/m^2$) and the concentration of tensional stress was observed at the lingual portion of the symphysis menti($2.38E+6N/m^2$)). 5. In the load case of UTCP, the relatively high concentration of tensional stress($3.66E+7N/m^2$) was observed at the internal surface of the condylar neck.

• Korean Chemical Engineering Research
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• v.50 no.5
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• pp.772-777
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• 2012

Factors acting on the deactivation of $V_2O_5/TiO_2$ catalysts were investigated in the selective catalytic reduction(SCR) process for long term operation. The activity of $V_2O_5/TiO_2$ catalysts was decreased rapidly after 8 months from the starting of operation in the selective catalytic reaction processes. From ICP-AES analysis, the deactivation of the used catalysts could be caused from the calcium component included in urea solution as a reducing agent. It was found from the $NH_3$-TPD experiments that the strong basic element like Ca component drastically affected the acidity of the $V_2O_5/TiO_2$ catalyst. The results gave an explanation on the reason why the component of Ca, even though its concentration is very low, could lead to the deactivation of $V_2O_5/TiO_2$ catalyst in the selective catalytic reaction processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Polymer(Korea)
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• v.35 no.1
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• pp.35-39
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• 2011

In this work, mesoporous carbons (CMK-3) were prepared by a conventional templating method using mesoporous silica (SBA-15) for using catalyst supports in polymer electrolyte membrane fuel cells (PEMFCs). The CMK-3 were chemically activated to obtain high surface area and small pore diameter with different potassium hydroxide (KOH) amounts, i.e., 0, 1, 3, and 4 g as an activating agent. And then Pt-Ru was deposited onto activated CMK-3 (K-CMK-3) by a chemical reduction method. The characteristics of Pt-Ru catalysts deposited onto K-CMK-3 were determined by surface area and pore size analysis, X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and inductive coupled plasma-mass spectrometry (ICP-MS). The electrochemical properties of Pt-Ru/K-CMK-3 catalysts were also analyzed by cyclic voltammetry (CV). From the results, the K3g-CMK-3 carbon supports activated with 3 g KOH showed the highest specific surface areas. In addition, the K3g-CMK-3 led to uniform dispersion of Pt-Ru onto K-CMK-3, resulted in the enhancement of elelctro-catalystic activity of Pt-Ru catalysts.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.141-149
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• 1997

L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders were prepared by both GNP(Glycine-Nitrate Process) and solid state reaction method in various of calcination temperature(800-1000.deg. C) and time in air. Also, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contacts on YSZ(Yttria-Stabilized Zirconia) substrate were prepared by screen printing and sintering method as a function of sintering temperature(1100-1450.deg. C) in air. Sintering behaviors have been investigated by SEM(Scanning Electron Microscope) and porosity measurement. Compositional and structural characterization were carried out by X-ray diffractometer and ICP AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) analysis. Electrical characterization was carried out by the electrical conductivity with linear 4 point probe method. As the calcination period increased in solid state reaction method, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ phase increased. Although L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ single phase was obtained only for 48hrs at 1000.deg. C, in GNP method it was easy to get single and ultra-fine L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders with submicron particle size at 650.deg. C for 30min. The particle size and thickness of L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contact by solid state reaction method did not change during the heat treatment, while those by GNP method showed good sintering characteristics because initial powder size fabricated from GNP method is smaller than that fabricated from solid state reaction method. Based on enthalpy change from thermodynamic data and ICP-AES analysis, it was suggested to make cathode contact in composition of (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$ Mn $O_{3}$ which have little second phase (L $a_{2}$Z $r_{2}$ $O_{7}$) for high efficient solid oxide fuel cells applications. As (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$Mn $O_{3}$ cathode contact on YSZ substrate was sintering at 1250.deg. C the temperature that liquid phase sintering did not occur. It was possible to obtain proper cathode contacts with electrical conductivity of 150(S/cm) and porosity content of 30-40%.m) and porosity content of 30-40%.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.315-315
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• 2010

결정질 실리콘을 포함하는 태양전지의 광전효율은 표면에 입사되는 태양광의 반사를 제외하면 흡수된 광자에 의해 생성되는 전자-정공쌍의 상대적인 비율인 내부양자효율에 의존하게 된다. 실제 생성된 전자-정공쌍은 기판재료의 결정상태와 전기광학적 물성 등에 의해 일부가 재결합되어 2차적인 광자의 생성이나 열로서 작용하고 최종적으로 전자와 정공이 완전히 분리되고 전극에 포집되어 실질적인 유효전류로 작용한다. 16% 이상의 고효율 결정질 실리콘 태양전지양산이 요구되고 있는 현실에서 광전효율 개선 위해 가장 우선적으로 고려되어야 할 변수는 입력 태양광스펙트럼에 대한 결정질 실리콘 표면반사율을 최소화하여 광흡수를 극대화하는 것이라 할 수 있다. 이의 해결을 위하여 대기와 실리콘표면 사이의 굴절률차이가 크면 클수록 태양광스펙트럼에 대한 결정질 실리콘의 광반사는 증가하기 때문에 상대적으로 낮은 굴절률의 $SiO_x$나 $SiN_x$와 같은 반사방지막을 광입력 실리콘표면에 증착하여 광반사율 저감공정을 적용하고 있다. 이와 더불어 결정질 실리콘표면을 화학적으로 혹은 플라즈마이온으로 50-100nm 직경의 바늘형 피라미드형상으로 texturing 함으로 광자들의 다중반사 등에 기인하는 광흡수율의 증가를 기대할 수 있기 때문에 태양전지효율 개선에 긍정적인 영향을 미치는 것으로 이해된다. 본 실험에서도 고효율 다결정 실리콘 태양전지 양산공정에 적용 가능한 ICP-RIE기반 결정질 실리콘표면에 대한 texturing 공정기술을 연구하였다. Double Langmuir 플라즈마 진단시스템(DLP2000)을 적용하여 사용한 $SF_6$와 $O_2$ 개스유량과 챔버압력, 플라즈마 파워에 따른 이온밀도, 전자온도, 포화이온전류밀도, 플라즈마포텐셜의 공간분포를 모니터링하였고 texturing이 완료된 시료에 대하여 A1.5G 표준태양광스펙트럼의 300-1100nm 파장대역에서 반사율을 측정하여 그 변화를 관찰하였다. 본 연구에서 얻어진 결과를 간략히 정리하면 Si texturing에 가장 적합한 플라즈마파워는 100W, $SF_6/O_2$ 혼합비는 18:22, 챔버압력은 30mtorr 등이고 이에 상응하는 플라즈마의 이온밀도는 $2{\sim}3{\times}10^8\;ions/cm^3$, 전자온도는 14~15eV, 포화전류밀도는 $0.014{\sim}0.015mA/cm^2$, 플라즈마포텐셜은 38~39V 범위 등이었다. 현재까지 얻어진 최소 평균반사율은 14.2% 였으며 최적의 texturing패턴 플라즈마공정 조건은 이온에 의한 Si표면원자들의 스퍼터링과 화학반응에 의한 증착이 교차하는 플라즈마 에너지 및 밀도 상태인 것으로 해석된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.