• 제목/요약/키워드: DuoPIGatrion ion source

검색결과 2건 처리시간 0.016초

유기박막표면에 DuoPIGatron 이온소스를 이용한 IPS 셀의 전기광학 특성 (EO performance of IPS cell on the inorganic films surface using DuoPIGatron ion source)

  • 김병용;황정연;김상훈;한정민;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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    • pp.89-90
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    • 2006
  • Electro-optical (EO) characteristics of in-plane switching (IPS) cell on the polyimide surface using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned IPS-cell on poly imide surface ; the stable VT curve in the ion-beam-aligned IPS cell on a poly imide (PI) surface with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned IPS cell on a polyimide (PI) surface with ion beam exposure using new type IB equipment was obtained.

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무기박막표면에 DuoPIGatron 이온소스를 이용한 TN-LCD 셀의 전기광학 특성 (EO performance of TN cell on the inorganic films surface using DuoPIGatron ion source on NDLC thin film)

  • 황정연;김병용;김상훈;한정민;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.432-433
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    • 2006
  • Electro-optical (EO) characteristics of twisted nematic (TN) - liquid crystal display (LCD) on the NDLC thin film using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the NDLC thin film was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned TN-cell on polyimide surface ; the stable VT curve in the ion-beam-aligned TN cell on the NDLC thin film with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned TN cell on the NDLC thin film with ion beam exposure using new type IB equipment was obtained.

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