• 한국전기전자재료학회논문지
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• 제28권11호
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• pp.694-697
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• 2015

We investigated the characterizations of carbon films fabricated by dual magnetron sputtering under various RF powers for the improvement of physical properties in carbon fiber (CF). All sputtered carbon films exhibited amorphous structure, regardless of RF powers, resulting in uniform and smooth surfaces. The hardness and elastic modulus are increased with the increase of RF power, and the adhesion and friction properties of carbon films were improved with the increase of RF power. In the results, The increase of RF power in the sputtering method improved tribological properties of the carbon films, and these attributes can be expected to improve the physical properties of the carbon fiber reinforcement plastics.

• 한국전기전자재료학회논문지
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• 제35권5호
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• pp.488-493
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• 2022

Generally, diamond-like carbon films (a-C:H, DLC) have been shown to have a low coefficient of friction, a high hardness and a low wear rate. Pd-doped C thin film was fabricated using a dual magnetron sputtering with two targets of graphite and palladium. Graphite target RF power was fixed and palladium target RF power was varied. The structural, physical, and surface properties of the deposited thin film were investigated, and the correlation among these properties was examined. The doping ratio of Pd increased as the RF power increased, and the surface roughness of the thin film decreased somewhat as the RF power increased. In addition, the hardness value of the thin film increased, and the adhesive strength was improved. It was confirmed that the value of the contact angle indicating the surface energy increases as the RF power increases. It was concluded that the increase in RF power contributed to the improvement of the physical properties of Pd-doped C thin film.

• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.36-41
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• 2023

We investigated the properties of vanadium oxide (VOx) buffer layers deposited by a dual RF magnetron sputtering method under various target powers for inverted organic solar cells (IOSCs). Sputter fabricatged VOx thin films exhibited higher crystallinity with the increase of target power, resulting in a uniform and large grain size. The electrical properties of VOx films are improved with the increase of target power because of the increase of V content. In the results, the performance of IOSCs critically depended on the target power during the film growth because the crystalllinity of the VOx film affects the carrier mobility of the VOx film.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1648-1650
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• 1996

In present paper, Cu films $4{\mu}m$, thick were fabricated by dual deposition methods using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adherence, and reflection in Cu films [$Cu_{4-x}$(low resistivity) / $Cu_x$(high adherence) / Si- wafer] on the x thickness have been investigated. Cu films of $4{\mu}m$ thickness formed with dual deposition methods had the low electrical resistivity of about $2.6{\mu}{\Omega}{\cdot}cm$ and high adherence of about 700g/cm. In conclusion, it is possible for these films to be used for micro-devices.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권1호
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• pp.23-27
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• 2003

Structural properties of Cu-Ni alloy films, such as preferred orientation, crystallite size, in-ter-planar spacing, cross-sectional morphology, and electrical resistivity, are investigated in terms of tar-get configurations that are used in the film deposition by means of magnetron co-sputtering. Two different target configurations are considered in this study: a dual-type configuration in which two separate tar-gets (Cu and Ni) and different bias types (RF and DC) are used and a Ni-on-Cu type configuration in which Ni chips are attached to a Cu target. The dual-type configuration appears to have some advantages over the Ni-on-Cu type regarding the accurate control of atomic composition of the deposited Cu-Ni alloy. However, the dual-type-produced film exhibits a porous and columnar structure, the relatively large internal stress, and the high electrical resistivity, which are mainly due to the relatively low mobility of adatoms. The affects of thermal treatment and deposition conditions on the structural and electrical properties of dual-type Cu-Ni films are also discussed.

• 한국전기전자재료학회논문지
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• 제34권1호
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• pp.39-43
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• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.

• 전기화학회지
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• 제3권4호
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• pp.219-223
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• 2000

구리-바나듐 산화물 양극을 이용하여 $(Cu_{0.5}V_2O_5)$으로 구성된 전 고상의 리튬이차박막전지를 제작하였다. 구리-바나듐 산화물 박막은 reactive DC magnetron sputtering을 이용하여 co-sputtering에 의해 제조하였고 Lipon고체전해질은 순수한 질소 분위기 하에서 RF 스퍼터링으로 제조하였다. XRD분석을 통해 구리-바나듐 산화물 박막이 비정질임을 확인하였고, EC:DMC(1:1 in IM $LiPF_5$)액체전해질을 사용한 반전지 구조에서 그 전기화학적 특성을 고찰하였다. Lipon고체전해질의 이온전도도는 $25^{\circ}C$에서 $1.02\times10^{-6}S/cm$를 나타내었고 전고상 박막전지는 $1.5V\~3.6V$의 전압구간, $50{\mu}A/cm^2$의 전류밀도에서 500싸이클까지 약 $50{\mu}Ah/cm^2{\mu}m$의 방전용량을 유지하였다