• Title/Summary/Keyword: Down-Mixer

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Effect of Mixer Structure on Turbulence and Mixing with Urea-water Solution in Marine SCR System (선박용 SCR 시스템에서 혼합기 구조에 따른 난류유동과 우레아 수용액의 혼합특성)

  • Kim, Tae-Kyoung;Sung, Yon-Mo;Han, Seung-Han;Ha, Sang-Jun;Choi, Gyung-Min;Kim, Duck-Jool
    • Journal of Advanced Marine Engineering and Technology
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    • v.36 no.6
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    • pp.814-822
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    • 2012
  • To improve the flow and mixing characteristics of marine SCR system, two different mixer including up-down and swirl type mixer were considered. The purpose of this study is to analyse turbulence intensity and uniformity index in detail and to improve the performance of SCR with respect to the mixer structure. The results showed that, the concentration uniformity index is improved by about 5% with the utilization of both mixers in the front of catalyst part. Although the RMS value and relative turbulence intensity increased after the up-down type mixer, it could observed that the value of two parameters decreased with the flow proceeding forward to the downstream. For the case of swirl type mixer, the decrease of RMS value and relative turbulence intensity were relatively smaller than that of up-down type mixer, and uniform distribution of relative turbulence intensity was observed. As a results, it could be concluded that the mixing effects and the distance of the two kinds of mixer were different.

Design of Double Bond Down Converting Mixer Using Embeded Balun Type (발룬 내장형 이중대역 하향 변환 믹서 설계 및 제작)

  • Lee, Byung-Sun;Roh, Hee-Jung;Seo, Choon-Weon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.6
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    • pp.141-147
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    • 2008
  • This paper describes the design of frequency down converting Mixer in the receiver to use compound semiconductor and CMOS product process. The basic theory and structure of frequency down converting Mixer is surveyed, and we design mixer circuit with active balun which use the compound semiconductor and CMOS process. This mixer convert a single ended signal to differential signal at input port of RF and LO instead of matching circuit to get dual band balanced mixer structure and characteristic broadband. This designed mixer has a conversion gain $-1{\sim}-6[dB]$ at $2{\sim}6[GHz]$ bandwidths. However, the simulation of the designed mixer with active balun has the result of a 7[dB] conversion gain for -2[dBm] LO input power and -10[dBm] input P1[dB] at 5.8[GHz].

Image-rejection down-conversion mixer for bluetooth application using CMOS (CMOS를 이용한 Bluetooth용 이미지 제거 하향 주파수 변환기 설계)

  • 김대연;이진택;오승민;이상국
    • Proceedings of the IEEK Conference
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    • 2000.11a
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    • pp.365-368
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    • 2000
  • This paper describes image-rejection down conversion mixer for bluetooth application using 0.35u CMOS process. the proposed architecture is composed of LO phase shifter, mixer core, IF buffer, and IF phase shifter. IF phase shifter is designed using polyphase fillet. Simulation results show conversion gain = l0㏈, input 1㏈ compression point = -15.7㏈m. input third-order intercept point(IIP3) = -4.4㏈m, and image-rejection ratio = 37.8㏈, respectively, at 3V supply voltage, and 15.7㎃ current.

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Design of Direct Conversion Transceiver Mixer with Functional Active Load for Linearity enhancement (기능성 능동 부하를 이용하여 선형성이 향상된 직접 변환 송수신기용 믹서의 설계)

  • Hong, Nam-Pyo;Kim, Do-Gyun;Jung, In-Il;Choi, Young-Wan
    • 한국정보통신설비학회:학술대회논문집
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    • 2007.08a
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    • pp.7-10
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    • 2007
  • 최근 이동통신을 이용해 다양한 서비스를 제공하기 위하여 멀티 밴드, 멀티 채널의 송수신기를 단일칩화 하기 위한 연구가 활발히 진행되고 있다. CMOS 집적 회로 기술은 가격 경쟁력이 높고 집적도가 높아 멀티 밴드, 멀티 채널 송수신기를 집적화하기에 적합하다. 그러나 0.18 ${\mu}m$ 이하의 채널 길이를 갖는 CMOS 집적 회로는 1.8 V 이하의 낮은 공급 전압을 제공함으로 높은 이득을 갖는 mixer의 구현이 어렵고, mixer에서 발생되는 2, 3차 상호 변조에 의한 왜곡으로 선형성이 문제가 된다. 이런 문제점을 해결하기 위해서 기능성 능동부하를 적용하여 선형성을 향상한 Direct Conversion Down Mixer를 설계 분석 하였다.

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Low Spurious Image Rejection Mixer for K-band Applications

  • Lee, Moon-Que;Ryu, Keun-Kwan;Kim, Hyeong-Seok
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.6
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    • pp.272-275
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    • 2004
  • A balanced single side-band (SSB) mixer employing a sub-harmonic configuration is designed for up and down conversions in K-band. The designed mixer uses anti-parallel diode (APD) pairs to effectively eliminate even harmonics of the local oscillator (LO) spurious signal. To reduce the odd harmonics of LO at the RF port, we employ a balanced configuration for LO. The fabricated chip shows 12$\pm$2dB of conversion loss and image-rejection ratio of about 20dB for down conversion at RF frequencies of 24-27.5GHz. As an up-conversion mode, the designed chip shows 12dB of conversion loss and image-rejection ratio of 20 ~ 25 dB at RF frequencies of 25 to 27GHz. The odd harmonics of the LO are measured below -37dBc.

Design of 900MHz CMOS RF Front-End IC for Digital TV Tuner (디지털 TV 튜너용 900MHz CMOS RF Front-End IC의 설계 및 구현)

  • 김성도;유현규;이상국
    • Proceedings of the IEEK Conference
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    • 2000.11b
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    • pp.104-107
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    • 2000
  • We designed and implemented the RFIC(RF front-end IC) for DTV(Digital TV) tuner. The DTV tuner RF front-end consists of low noise IF amplifier fur the amplification of 900 MHz RF signal and down conversion mixer for the RF signal to 44MHz IF conversion. The RFIC is implemented on ETRI 0.8u high resistive (2㎘ -cm) and evaluated by on wafer, packaged chip test. The gain and IIP3 of IF amplifier are 15㏈ and -6.6㏈m respectively. For the down conversion mixer gain and IIP3 are 13㏈ and -6.5㏈m. Operating voltage of the IF amplifier and the down mixer is 5V, current consumption are 13㎃ and 26㎃ respectively.

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A Low Power and High Linearity Up Down Converter for Wireless Repeater (무선 중계기용 저전력, 고선형 Up-down Converter)

  • Hong, Nam Pyo;Kim, Kwang Jin;Jang, Jong-Eun;Chio, Young-Wan
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.3
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    • pp.433-437
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    • 2015
  • We have designed and fabricated a low power and high linearity up down convertor for wireless repeaters using $0.35{\mu}m$ SiGe Bipolar CMOS technology. Repeater is composed of a wideband up/down converting mixer, programmable gain amplifiers (PGA), input buffer, LO buffer, filter driver amplifier and integer-N phase locked loop (PLL). As of the measurement results, OIP3 of the down conversion mixer and up conversion mixer are 32 dBm and 17.8 dBm, respectively. The total dynamic gain range is 31 dB with 1 dB gain step resolution. The adjacent channel leakage ratio (ACLR) is 59.9 dBc. The total power consumption is 240 mA at 3.3 V.

Down Conversion Mixer for Millimeter Band (밀리피터파 대역 하향 변환 혼합기)

  • Ji, Hong-Gu;Oh, Seung-Hyeub
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.11
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    • pp.1318-1323
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    • 2010
  • A lot of demand for parts of millimeter wave band, as would be expected 57~63 GHz band down conversion mixer was designed and fabricated using IHP 0.25 um SiGe process. Designed and fabricated mixer was double balanced type and located reduced 3D balun at RF port and buffer amplifier at outport for suppression LO signal and conversion gain. Fabricated mixer measured conversion gain of 13.8 dB, $P1dB_{in}$ -17 dBm and 88 mA of current consumption characteristics, respectively.

A 24-GHz Wide-IF Down-Conversion Mixer Based on 0.13-μm RFCMOS Technology (0.13-μm RFCMOS 공정 기반 24-GHz 광대역 하향 변환 혼합기)

  • Kim, Dong-Hyun;Rieh, Jae-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.11
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    • pp.1235-1239
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    • 2010
  • In this work, a wideband technique has been proposed that improves the IF bandwidth of mixers and a 24-GHz down-conversion mixer employing the proposed technique has been designed and fabricated based on 0.13-${\mu}m$ RFCMOS technology. The mixer showed the conversion gain of $2.7{\pm}1.5$ dB from DC to 5.25 GHz IF for a fixed LO frequency of 24 GHz. Measured P-1dB and LO-RF isolation was -8.7 dBm and 21 dB, respectively. The mixer draws DC current of 10.6 mA from 1.3 V supply.

Design of Mixer using Neutralization Technique (Neutralization을 이용한 주파수 변환기 설계)

  • Choi, Moon-Ho;Choi, Won-Ho;Kim, Yeong-Seuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.311-320
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    • 2008
  • In this paper, a 2.4 GHz low-voltage CMOS double-balanced down-conversion mixer using neutralization technique has been proposed and verified by circuit simulations and measurements. The grounded source structure was used for low-voltage operation. The neutralization technique was used to improve a conversion gain. The proposed mixer is fabricated in $0.25{\mu}m$ CMOS process for a 2.4 GHz wireless receiver. The mixer consumes 1.94 mW and gives conversion gain of 5.66 dB, input IP3 of 0.7 dBm and P1dB of -11.2 dBm at 1.5 V power supply. Measured results for the designed mixer show improved conversion gain of 2.86 dB over conventional mixer of grounded source structure.