• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.1
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• pp.297-300
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• 2006

In this paper, the EM wave absorbers were designed and fabricated for X-band sensors using Carbon of dielectric material with CPE. The complex relative permittivity of samples is calculated by the measured S-parameter data. We simulated the double-layered type EM wave absorber with broad bandwidth using the measured complex relative permittivity by changing the thickness and layer, which was fabricated based on the simulated design. The fabricated EM wave absorber consist of 1mm first layer sheet facing metal with Carbon composition ratio 70 vol% and 1.5 mm second layer sheet with Carbon composition ratio 60 vol%. The comparisons of simulated and measured results are good agreement. As a result, the optimized absorption ability of double-layered type EM wave absorber with thickness of 2.5 mm is higher than 10 dB from 7.8 GHz to 13.3 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.943-949
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• 2000

In this paper, the single and double heterostructure organic light-emitting devices(OLEDs) were fabricated. The single heterostructure OLED(TYPE 1) is consisted of TPD as a HTL(hole transfer layer) and Alq$_3$as an EML(emitting layer). The double heterostructure OLED(TYPE 2) is consisted of TPD as a HTL, Alq$_3$as an EML and PBD as an ETL(electron transfer layer). The another double heterostructure OLED(TYPE 3) is consisted of TPD as a HTL, PBD as an EML and Alq$_3$as an ETL. We obtained a strong green emission device with maximum EL emission wavelength 500nm in TYPE 3. When the applied voltage was 12V, the emission luminescence was 120.9cd/㎡. The chromaticity index of TYPE 3 was x=0.29, y=0.50. In the characteristic plot of current-voltage, TYPE 3 device was turned on at 6.9V. This voltage was a fairly low turn-on voltage. TYPE 1 and 2 device were turned on at 10V and 8.9V respectively. These types showed no good properties over that of TYPE 3.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.132-137
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• 2015

The effects of the mixing of an active material and a conductive additive on the electrochemical performance of an electric double layer capacitor (EDLC) electrode were investigated. Coin-type EDLC cells with an organic electrolyte were fabricated using the electrode samples with different ball-milling times for the mixing of an active material and a conductive additive. The ball-milling time had a strong influence on the electrochemical performance of the EDLC electrode. The homogeneous mixing of the active material and the conductive additive by ball-milling was very important to obtain an efficient EDLC electrode. However, an EDLC electrode with an excessive ball-milling time displayed low electrical conductivity due to the characteristic change of a conductive additive, leading to poor electrochemical performance. The mixing of an active material and a conductive additive played a crucial role in determining the electrochemical performance of EDLC electrode. The optimal ball-milling time contributed to a homogeneous mixing of an active material and a conductive additive, leading to good electrochemical performance of the EDLC electrode.

• Korean Journal of Metals and Materials
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• v.49 no.5
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• pp.419-424
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• 2011

Carbon nanotubes (CNTs) were directly synthesized on a copper (Cu) plate as a current collector by the catalytic thermal vapor deposition method for an electric double-layer capacitor (EDLC) electrode. The diameters of vertically aligned CNTs grown on the Cu plate were 20~30 nm. From cyclic voltammetry (CV) results, the CNTs/Cu electrode showed high specific capacitance with typical profiles of EDLCs. Rectangularshaped CV curves suggested that the CNTs/Cu electrode could be an excellent candidate for an EDLC electrode. The specific capacitances were in a range of 25~75 F/g with a scan rate of 10~100 mV/s and KOH electrolyte concentration 1~6 M, and were maintained up to 1000 charge/discharge cycles due to strong adhesion between the Cu substrate and the CNTs.

• Advances in Energy Research
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• v.8 no.1
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• pp.41-57
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• 2022

Electrochemical double-layer capacitors (EDLCs) based on solid polymer electrolytes (SPEs) have gained an immense recognition in the present world due to their unique properties. This study is about preparing and characterizing EDLCs using a natural rubber (NR) based SPE with natural graphite (NG) electrodes. NR electrolyte was consisted with 49% methyl grafted natural rubber (MG49) and zinc trifluoromethanesulfonate ((Zn(CF₃SO₃)₂-ZnTF). It was characterized using electrochemical impedance spectroscopy (EIS) test, dc polarization test and linear sweep voltammetry (LSV) test. NG electrodes were made using a slurry of NG and acetone. EIS test, cyclic voltammetry (CV) test and galvanostatic charge discharge (GCD) test have been done to characterize the EDLC. Optimized electrolyte composition with NR: 0.6 ZnTF (weight basis) exhibited a conductivity of 0.6 x 10^-4 Scm^-1 at room temperature. Conductivity was predominantly due to ions. The electrochemical stability window was found to be from 0.25 V to 2.500 V. Electrolyte was sandwiched between two identical NG electrodes to fabricate an EDLC. Single electrode specific capacitance was about 2.26 Fg^-1 whereas the single electrode discharge capacitance was about 1.17 Fg^-1. The EDLC with this novel NR-ZnTF based SPE evidences its suitability to be used for different applications with further improvement.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1489-1496
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• 2009

Amorphous indium-gallium-zinc-oxide thin-film-transistors (TFTs) were modeled successfully. Dependence of TFT characteristics on structure, thickness, and equilibrium electron-density of the active layer was studied. For mono-active-layer TFTs, a thinner active layer had higher field-effect mobility. Threshold voltage showed the smallest absolute value for the 20 nm active-layer. Subthreshold swing showed almost no dependence on active-layer thickness. For the double-active-layer case, better switching performances were obtained for TFTs with bottom active layers with higher equilibrium electron density. TFTs with thinner active layers had higher mobility. Threshold voltage shifted in the minus direction as a function of the increase in the thickness of the layer with higher equilibrium electron-density. Subthreshold swing showed almost no dependence on active-layer structure. These data will be useful in optimizing the structure, the thickness, and the doping ratio of the active layers of oxide-semiconductor TFTs.

• Journal of Magnetics
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• v.20 no.3
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• pp.308-311
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• 2015

We design a crisscrossed double-layer birdcage (DLBC) coil by modifying the coil geometry of a standard single-layer BC (SLBC) coil to enhance the homogeneity of transmitting magnetic flux density ($B_1{^+}$) along the main magnetic field ($B_0$)-direction for small-animal magnetic resonance imaging (MRI) at 300 MHz. The performance assessment of the crisscrossed DLBC coil is conducted by computational analysis with the finite-difference time domain method (FDTD) and compared with SLBC coil in terms of the $B_1$ and the $B_1{^+}$ distribution. As per the computational calculation studies, the mean value in the two-dimensional $B_1{^+}$ map obtained at the mid-axial slice with the proposed DLBC coil is slightly lower than that obtained with the SLBC coil, but the $B_1{^+}$ value of the DLBC coil in the outermost plane (40 mm away from the central plane) shows improvements of 19.3% and 24.8% over the SLBC coil $B_1{^+}$ value when simulating a spherical phantom and realistic mouse body modeling. These simulation results indicate that, the $B_1{^+}$ homogeneity along the z-direction was improved by using DLBC configuration. Our approach enables $B_1{^+}$ homogeneity improvement along the zdirection, and it can also be applied to ultra-high field (UHF) MRI systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.436-437
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• 2012

Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.315-321
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• 2015

Rare-earth zirconates, such as $La_2Zr_2O_7$ and $Gd_2Zr_2O_7$, have been investigated as one of the candidates for replacing conventional yttria-stabilized zirconia (YSZ) for thermal barrier coating (TBC) applications at higher turbine inlet temperatures. In this study, double-ceramic-layer (DCL) TBCs of YSZ 1st layer and $La_2Zr_2O_7$ top coat layer are fabricated by suspension plasma spray with serial liquid feeders. Microstructures, hardness profiles, and thermal durability of DCL-TBCs are also characterized. Fabricated DCL-TBCs of YSZ/$La_2Zr_2O_7$ exhibit excellent properties, such as adhesion strength (>25 MPa) and electrical thermal fatigue (~1429 cycles), which are comparable with TBCs fabricated by atmospheric plasma spray.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.199-203
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• 2008

High-efficiency phosphorescent organic light emitting diodes using TCTA-TAZ as a double host and $Ir(ppy)_3$ as a dopant were fabricated and their electro-luminescence properties were evaluated. The fabricated devices have the multi-layered organic structure of 2-TNATA/NPB/(TCTA-TAZ) : $Ir(ppy)_3$/BCP/SFC137 between an anode of ITO and a cathode of LiF/AL. In the device structure, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] were used as a hole injection layer and a hole transport layer, respectively. BCP [2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline] was introduced as a hole blocking layer and an electron transport layer, respectively. TCTA [4,4',4"-tris(N-carbazolyl)-triphenylamine] and TAZ [3-phenyl-4-(1-naphthyl)-5-phenyl-1,2,4-triazole] were sequentially deposited, forming a double host doped with $Ir(ppy)_3$ in the [TCTA-TAZ] : $Ir(ppy)_3$ region. Among devices with different thickness combinations of TCTA ($50\;{\AA}-200\;{\AA}$) and TAZ ($100\;{\AA}-250\;{\AA}$) within the confines of the total host thickness of $300\;{\AA}$ and an $Ir(ppy)_3$-doping concentration of 7%, the best electroluminescence characteristics were obtained in a device with $100\;{\AA}$-think TCTA and $200\;{\AA}$-thick TAZ. The $Ir(ppy)_3$ concentration in the doping range of 4%-10% in devices with an emissive layer of [TCTA ($100\;{\AA}$)-TAZ ($200\;{\AA}$)] : $Ir(ppy)_3$ gave rise to little difference in the luminance and current efficiency.