• Journal of the Korean Ceramic Society
• /
• v.54 no.4
• /
• pp.303-307
• /
• 2017

Pure $In_2O_3$, 0.5 and 1.0 wt% Mg doped $In_2O_3$ hollow spheres were synthesized by ultrasonic spray pyrolysis of a solution containing In-, Mg-nitrate and sucrose and their gas sensing characteristics to 5 ppm $C_2H_5OH$, p-xylene, toluene, and HCHO were measured at 250, 300 and $350^{\circ}C$. Although the addition of Mg decreases the specific surface area and the volume of meso-pores, the gas response (resistance ratio) of the 0.5 wt% Mg doped $In_2O_3$ hollow spheres to 5 ppm $C_2H_5OH$ at $350^{\circ}C$ (69.4) was significantly higher than that of the pure $In_2O_3$ hollow spheres (24.4). In addition, the Mg doped $In_2O_3$ hollow spheres showed the highest selectivity to $C_2H_5OH$. This was attributed to the dehydrogenation of $C_2H_5OH$ assisted by basic MgO into reactive $CH_3CHO$ and $H_2$.

• Journal of the Korean Ceramic Society
• /
• v.51 no.4
• /
• pp.278-282
• /
• 2014

Due to high ionic conductivity and favorable oxygen electrocatalysis, doped $Bi_2O_3$ systems are promising candidates as solid oxide fuel cell cathode materials. Recently, several researchers reported reasonably low cathode polarization resistance by adding electronically conducting materials such as (La,Sr)$MnO_3$ (LSM) or Ag to doped $Bi_2O_3$ compositions. Despite extensive research efforts toward maximizing cathode performance, however, the inherent catalytic activity and electrochemical reaction pathways of these promising materials remain largely unknown. Here, we prepare a symmetrical structure with identically sized $Y_{0.5}Bi_{1.5}O_3$/LSM composite electrodes on both sides of a YSZ electrolyte substrate. AC impedance spectroscopy (ACIS) measurements of electrochemical cells with varied cathode compositions reveal the important role of bismuth oxide phase for oxygen electrocatalysis. These observations aid in directing future research into the reaction pathways and the site-specific electrocatalytic activity as well as giving improved guidance for optimizing SOFC cathode structures with doped $Bi_2O_3$ compositions.

• Journal of information and communication convergence engineering
• /
• v.4 no.1
• /
• pp.18-22
• /
• 2006

A small-sized gas identification system has been fabricated and characterized using an integrated gas sensor array and artificial neural-network. The sensor array consists of four thick-film oxide semiconductor gas sensors whose sensing layers are $In_{2}O_{3}-Sb_{2}O_{5}-Pd-doped\;SnO_2$ + Pd-coated layer, $La_{2}O_{5}-PdCl_{2}-doped\;SnO_2,\;WO_{3}-doped\;SnO_{2}$ + Pt-coated layer and $ThO_{2}-V_{2}O_{5}-PdCl_{2}\;doped\;SnO_{2}$. The small-sized gas identification instrument is composed of a GMS 81504 containing an internal ROM (4k bytes), a RAM (128 bytes) and four-channel AD converter as MPU, LEDs for displaying alarm conditions for three gases (liquefied petroleum gas: LPG, liquefied natural gas: LNG and carbon monoxide: CO) and interface circuits for them. The instrument has been used to identify alarm conditions for three gases among the real circumstances and the identification has been successfully demonstrated.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.294-297
• /
• 2009

We computationally investigated the effects of oxygen and alkaline-earth on the emission wavelength of the $Eu^{2+}$-doped oxide phosphor. Using QSPR method, we found that the oxygen and alkaline-earth atom around the Eu atom increase and decrease the emission wavelength, respectively. We also investigated the $Eu^{2+}$-doped sulfide, nitride, and oxynitride phosphors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.5
• /
• pp.457-460
• /
• 2006

Y doped zinc oxide (YZO) thin films were deposited on F doped $SnO_2$ (FTO) glass substrate by sol-gel method using the spin-coating system. A homogeneous and stable solution was prepared by dissolving acetate in the solution added diethanolamine as sol-gel stabilizer. YZO films were obtained after preheated on the hot-plate for 5minute before each coating; the number of coating was 3 times. After the coating of last step, annealing of YZO films performed at $450^{\circ}C$ for 30 minute. In order to confirming of a ultraviolet ray interruption and down-conversion effects, optical properties of YZO films, transmission spectrum and fluorescent spectrum were used. Also, for understanding the obtained results by experiment, the elestronic state of YZO was calculated using the density functional theory The results obtained by experiment were compared with calculated structure. The detail of electronic structure was obtained by the discrete variational Xa (DV-Xa) method, which is a sort of molecular orbital full potential method. The density of state and energy levels of dopant element were shown and discussed in association with optical properties.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.301.2-301.2
• /
• 2016

Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.452-452
• /
• 2013

ZnO is one of the most attractive transparent conductive oxide (TCO) films because of low toxicity, a wide band gap material and relatively low cost. However, the electrical conductivity of un-doped ZnO is too high to use it as TCO films in practical application. To improve electrical properties of undoped ZnO, transition metal (TM) doped ZnO films such as Al doped ZnO or Ti doped ZnO have been extensively studied. Here, we prepared Ti doped ZnO thin films by atomic layer deposition (ALD) for the application of TCO films. ALD was used to prepare Ti-doped ZnO thin films due to its inherent merits such as large area uniformity, precise composition control in multicomponent thin films, and digital thickness controllability. Also, we demonstrated that ALD method can be utilized for fabricating highly ordered freestanding nanostructures of Ti-doped ZnO thin films by combining with BCP templates, which can potentially used in the photovoltaic applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.87-88
• /
• 2012

Metal oxide nanostructures have been applied to various fields such as energy, catalysts and electronics. We have freely designed one and two-dimensional (1 and 2-D) metal (transition metals and lanthanides) oxide nanostructures, characterized them using various techniques including scanning electron microscopy, transmission electron microscopy, X-ray diffraction crystallography, thermogravimetric analysis, FT-IR, UV-visible-NIR absorption, Raman, photoluminescence, X-ray photoelectron spectroscopy, and temperature-programmed thermal desorption (reaction) mass spectrometry. In addition, Ag- and Au-doped metal oxides will be discussed in this talk.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2016.05a
• /
• pp.92-92
• /
• 2016

• Korean Journal of Materials Research
• /
• v.23 no.9
• /
• pp.517-524
• /
• 2013

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.