• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권8호
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• pp.563-569
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• 1999

Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.231-232
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• 2008

The coupling between electric, magnetic, and structural order parameters results in the so-called multiferroics, which possess ferroelectricity, ferromagnetism, and/or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) allow potential applications in information storage, spintronics, and in magnetic or electric field sensors. Perovskite compound $BiFeO_3$ (BFO) is antiferromagnetic below Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature(RT) due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors which cause leakage in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is fabricating donor doped BFO compounds and thin films. We report here the successful fabrication of the Nd, Ti co-doped $BiFeO_3$ ceramics and thin films by pulsed laser deposition technique.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.202-206
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• 2007

ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.217-221
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• 2008

In this study, We have been investigated the effect of calcination temperature and high-energy ball-milling of powder influences the $BaTiO_3$-based PTCR(Positive Temperature coefficient Resistance) characteristics and microstructure. The mixed powder was obtained from $BaCO_3$, $TiO_2$, $CeO_2$ ball-milled in attrition mill. The mixed powder was calcine from 1000 $^{\circ}C$ to 1200 $^{\circ}C$ in air and then it was sintered in reduction- re-oxidation atmosphere. As a result, The room-temperature electrical resistivity decreased and increased with increasing calcination temperature. specially, Attrition milled powder could have low room-temperature resistivity and high PTC jump order at 1100 $^{\circ}C$. attrition milling had lower room-temperature resistivity than ball milling. Particle size decreased by Attrition milling of powder influences in calcination temperature and room-temperature resistivity.

• 한국태양에너지학회 논문집
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• 제23권4호
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• pp.29-35
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• 2003

We studied the water splitting into $H_2$ and $O_2$ using two different semiconductor photo catalysts and redox mediator, mimicking the Z-scheme mechanism of the photosynthesis, $H_2$ evolution took place on a Pt-$SrTiO_2$ (Cr-Ta doped) photocatalyst using $I^-$ electron donor under the visible light irradiation. The Pt-$WO_3$ photocatalyst showed an excellent activity of the $O_2$ evolution using $IO_3^-$ electron acceptor under visible light. $H_2$ and $O_2$ gases evolved in the stoichiometric ratio($H_2/O_2$=2) under visible light using a mixture of the Pt-$WO_3$ and Pt-$SrTiO_3$ (Cr-Ta doped) suspended in NaI aqueous solution. We proposed a two-step photo-excitation mechanism using redox mediator under the visible irradiation.

• ETRI Journal
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• 제23권3호
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• pp.97-105
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• 2001

$1.6\;{\mu}m$ emission originated from $Pr^{3+}:\;(^3F_3,\;^3F_4)\;{\longrightarrow}\;^3H_4$ transition in $Pr^{3+}-\;and\;Pr^{3+}/Er^{3+}$-doped selenide glasses was investigated under an optical pump of a conventional 1480 nm laser diode. The measured peak wavelength and fullwidth at half-maximum of the fluorescent emission are ~1650nm and 120nm, respectively. A moderate lifetime of the thermally coupled upper manifolds of ${\sim}212{\pm}10{\mu}s$ together with a high stimulated emission cross-section of ${\sim}(3{\pm}1){\times}10^{-20}\;cm^2$ promises to be useful for $1.6{\mu}m$ band fiber-optic amplifiers that can be pumped with an existing high-power 1480 nm laser diode. Codoping $Er^{3+}$ enhances the emission intensity by way of a nonradiative $Er^{3+}:\;^4I_{13/2}\;{\longrightarrow}\;Pr^{3+}:\;(^3F_3,\;^3F_4)$ energy transfer. The Dexter model based on the spectral overlap between donor emission and acceptor absorption describes well the energy transfer from $Er^{3+}$ to $Pr^{3+}$ in these glasses. Also discussed in this paper are major transmission loss mechanisms of a selenide glass optical fiber.

• Advances in Energy Research
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• 제3권2호
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• pp.117-124
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• 2015

In this paper, we have reported an enhancement in thermoelectric properties of un-doped zinc oxide (ZnO) grown by molecular beam epitaxy (MBE) on silicon (001) substrate by annealing treatment. The grown ZnO thin films were annealed in oxygen environment at $500^{\circ}C-800^{\circ}C$, keeping a step of $100^{\circ}C$ for one hour. Room temperature Seekbeck measurements showed that Seebeck coefficient and power factor increased from 222 to $510{\mu}V/K$ and $8.8{\times}10^{-6}$ to $2.6{\times}10^{-4}Wm^{-1}K^{-2}$ as annealing temperature increased from 500 to $800^{\circ}C$ respectively. This observation was related with the improvement of crystal structure of grown films with annealing temperature. X-ray diffraction (XRD) results demonstrated that full width half maximum (FWHM) of ZnO (002) plane decreased and crystalline size increased as the annealing temperature increased. Photoluminescence study revealed that the intensity of band edge emission increased and defect emission decreased as annealing temperature increased because the density of oxygen vacancy related donor defects decreased with annealing temperature. This argument was further justified by the Hall measurements which showed a decreasing trend of carrier concentration with annealing temperature.

• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.41-44
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• 2014

본 연구에서는 $TiO_2$에 나이오븀 (Nb) 도펀트가 주입되었을 때의 활성화 에너지를 홀 효과 측정 시스템과 온도에 따른 photoluminescence (PL) 실험을 통하여 살펴보았다. Nb 이 도핑 된 n형 아나타제 $TiO_2$ 박막은 pulsed laser deposition (PLD) 기법으로 $SrTiO_3$기판에 성장되었다. 측정 결과, Nb 도너의 활성화 에너지 값은 홀 효과 측정에서는 14.52 meV, PL 측정에서는 6.72 meV로 다소 차이를 보였다. 이 결과는 기존의 어셉터 물질의 활성화 에너지들과는 차이를 나타내고 있으며, 향후 본 연구와 같은 shallow 도너 준위의 활성화 에너지 연구에 대한 더 많은 연구가 필요할 것으로 판단된다.

• 한국재료학회지
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• 제4권7호
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• pp.798-807
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• 1994

$BaTio_{3}$에 Ca가 첨가되면 상온 저항을 증가시키며 이는 $Ca^{2+}$가 $Ti^{4+}$를 치환하여 acceptor 불순물을 형성하기 때문이라고 생각된다. 그러나 $Ca^{2+}$는 $Ti^{4+}$보다 이온 반경이 크므로 그 자리를 치환하지 않는다는 주장도 있다. 본 실험에서는 $BaTiO_{3}$에 의한 acceptor가 존재하는지 알아보기 위하여 Ba/(Ti+Ca+Nb)=1이 되도록 Ca와 Nb를 첨가하여 산소 분압의 변화에 따른 고온 평형 전기 전도도를 측정하였다. 측정은 $1000^{\circ}C$에서 행하였으며 산소 분압은 $10^{-15}$ ~ 1 기압의 범위에서 조절하였다. 첨가된 Ca와 Nb의 농도를 변화시킨 결과, acceptor와 donor의 상호 보상 효과가 나타났다. 즉, Nb에 의한 donor를 보상하는 acceptor가 존재함을 확일하였고, 전도도 곡선의 결함 화학적인 해석에 의하여 Ca가 Ti자리를 치환함을 알았다. 이러한 acceptor의 존재는 ICTS에 의해서도 확인되었다.

• 마이크로전자및패키징학회지
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• 제27권4호
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• pp.19-24
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• 2020

열처리 공정을 이용하여 Si 도핑된 n형 β-Ga2O3의 전기적 특성을 변화시킨 후 전도도 변화 메커니즘에 대한 분석을 진행하였다. β-Ga2O3 시편들은 공기 또는 N2 분위기에서 800℃~1,200℃ 온도범위 내에서 30분 동안 열처리되었다. 우선 열처리로 인한 결정성 개선은 전기 전도도에 영향을 미치지 않음을 확인하였다. 하지만 공기중 열처리된 시편은 전도성이 악화된 반면 N2 열처리된 시편은 Hall 캐리어 농도와 이동도가 일부 개선되는 경향성을 보였다. X-ray photoemission spectroscopy(XPS)분석 결과, 산소공공(VO)의 농도는 가스 분위기에 상관없이 모든 열처리된 시편에서 증가하는 경향성을 보였다. 공기중 열처리된 시편에서의 VO 농도 증가는 β-Ga2O3내 VO가 Shallow donor가 아님을 보여주는 결과로 볼 수 있다. 그러므로 N2 열처리된 시편은 VO가 아닌 다른 메커니즘에 의해서 전도도가 향상되었을 가능성이 높다. Si의 경우 SiOx 결합상태를 보이는 Si의 농도가 열처리 온도 증가에 따라 증가하는 경향성을 보였다. 특이하게도 SiOx의 Si 2p peak의 면적 증가는 기존 Si의 화학적 변화 보다는 XPS 측정 영역내 Si농도 증가로 보였으며, SiOx와 전기전도도와의 상관성은 확인할 수 없었다. 결론적으로 본 연구를 통해 기존 보고된 실험결과와 달리 VO가 Deep donor임을 확인하였다. 이와 같은 β-Ga2O3 전도성의 결함 및 불순물 의존도에 대한 연구는 β-Ga2O3의 전기적 특성의 근본적인 이해를 바탕으로 물성 개선에 기여할 것으로 본다.