• Transactions on Electrical and Electronic Materials
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• 제4권4호
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• pp.18-21
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• 2003

Sol-gel processing of $BaTiO_3$ ceramics doped with La(0.01-1.00 at. $\%$) were prepared from metal barium, titanium n-butoxide and lanthanum iso-propoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results showed that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of $BaTiO_3$ powders and sintering conditions used.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.287-290
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• 2003

Sol-gel processing of $BaTiO_3$ ceramics doped with La(0.01~1.00 at.%) were prepared from metal barium, titanium n-butoxide and lanthanum iso-propoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results showed that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of $BaTiO_3$ powders and sintering conditions used.

• 자연과학논문집
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• 제13권1호
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• pp.51-63
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• 2003

$1-10^{-20}$atm의 산소 압력과 700K 및 1200K의 등온상태에서 Donor를 첨가한 $BaTiO_3$의 전기전도도를 조사하여 결함의 형태를 조사하였다. Donor를 첨가한 $BaTiO_3$에서 Donor의 첨가량이 증가함에 따라 최소 전기도도를 나타내는 극소점의 위치가 순수한 경우에 비아여 어느 정도 이동이 있었다. 이러한 극소점 위치의 이동으로 불순물의 상대적 함유량을 비교할 수 있었다. 매우 낮은 산소압력에서는 Dopant의 양에 무관하게 전도도 값이 일정하였으며 이러한 현상은 환원반응이 주된 원인임을 알았다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.374-377
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• 2003

Sol-gel processing of BaTiO$_3$ ceramics doped with La(0.01-1.00 at.%) were prepared from metal barium, titanium n-butoxide and lanthanum isopropoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results suggested that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of BaTiO$_3$ powders and sintering conditions used.

• Journal of information and communication convergence engineering
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• 제1권1호
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• pp.31-34
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• 2003

Sol-gel processing of $BaTiO_{3}$ ceramics doped with La (0.01∼1.00 at.%) were prepared from metal barium, titanium n-butoxide and lanthanum isopropoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results suggested that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of $BaTiO_{3}$ powders and sintering conditions used.

• 한국세라믹학회지
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• 제48권5호
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• pp.471-478
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• 2011

Investigations of crystal structure and phase transition of $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics doped with A-site substitution impurity (La, Nd) or B-site substitution impurity (Sb, Nb) at 2 mol% concentration were carried out. X-ray diffraction patterns of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics have been measured at pressures up to ~5 GPa with diamond anvil cell and synchrotron radiation. The patterns were obtained at room temperature using methanol-ethanol mixture as pressure-transmitting media. In order to refine the crystal structure, Rietveld analysis has been performed. The structures of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics are tetragonal in space group P4mm at ambient pressure and are transformed into a cubic phase in space group Pm$\bar{3}$m as the pressure increases. In this study, when A-site substitution donor $La^{3+}$ or $Nd^{3+}$ ion was added to $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics, the phase transition phenomena showed up at the pressure of 2.5~4.6 GPa, but when B-site substitution donor $Nb^{5+}$ or $Sb^{5+}$ ion was added to it, the phase transition appeared at relatively lower pressure of 1.7~2.6 GPa.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.74-74
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• 2001

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.88.1-88.1
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• 2000

• Bulletin of the Korean Chemical Society
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• 제23권10호
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• pp.1404-1408
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• 2002

The resonance Raman spectra of trans-polyacetylene films doped heavily with electron donor (Na) and acceptor (HClO4) have been measured with excitation wavelengths between 488- and 1320-nm, and the relationships between the Raman excitation photon energies (2.54-0.94 eV) and its wavenumbers were discussed. We found the linear dependence of the Raman shifts with the exchanges of excitation photon energies. In particular, the Raman wavenumbers in the C=C stretching $(V_1$ band) showed a dramatic decrease with the increase in Raman excitation photon energies. In the case of acceptor doping, its change is larger than that of donor doping. The observed wavenumber (1255-1267 $cm^{-1}$) of the $V_2$ band (CC stretch) of Na-doped form is lower than that of the corresponding band (1290-1292 $cm^{-1}$) of its pristine trans-polyacetylene, whereas the contrary is the case for the HClO4 doped form (1295-1300 $cm^{-1}$). The origin of doping-induced Raman bands is discussed in terms of negative and positive polarons.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.