• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2787-2790
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• 2011

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1098-1104
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• 2014

New electron deficient acceptor-acceptor-acceptor type of monomer unit composed of weak electron accepting benzimidazole and relatively strong electron accepting benzothiadiazole derivatives namely 4,7-bis(6-bromo-1-(2-ethylhexyl)-1H-benzo[d]imidazol-2-yl)benzo[c][1,2,5]thiadiazole (BBB) was synthesized. The Stille polycondensation of the newly synthesized BBB monomer with electron donating 2,6-bis(trimethyltin)-4,8-bis(2-ethylhexyloxy)benzo[1,2-b:4,5-b']dithiophene (BDT) afforded donor-acceptor-acceptor-acceptor type of polymer namely 2,6-(4,8-bis(2-ethylhexyloxy)benzo[1,2-b:4,5-b']dithiophene)-alt-4,7-bis(1-(2-ethylhexyl)-1H-benzo[d]imidazol-2-yl)benzo[c][1,2,5]thiadiazole (PBDTBBB). The opto-electrical studies revealed that the absorption band of PBDTBBB appeared in the range of 300 nm-525 nm and its highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels were positioned at -5.18 eV and -2.84 eV, respectively. The power conversion efficiency (PCE) of the polymer solar cell (PSC) prepared from PBDTBBB:PC71BM (1:2 wt %) blend was 1.90%.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.117.1-117.1
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• 2011

We have demonstrated Forst-type resonance energy transfer (FRET) in the quasi-solid type dye-sensitized solar cells between organic fluorescence materials as an energy donor doped in polymeric gel electrolyte and ruthenium complex as an energy acceptor on surface of $TiO_2$. The strong spectral overlap of emission/absorption of energy donor and acceptor is required to get high FRET efficiency. The judicious choice of energy donor allows the enhancement of light harvesting characters of energy acceptor in quasi-solid dye sensitized solar cells which increase the power conversion efficiency. The enhanced light harvesting effect by the judicious choice/design of the fluorescence materials and sensitizing dyes permits the enhancement of photovoltaic performance of DSSC.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2000.04a
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• pp.150-151
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• 2000

Some chromophores that can undergo a pronouncend colour change when acted upon an extenal agency, such as light, heat, pH, or chemical agents, have many potential applicationa as functional dyes. They may be used as indicators, optical sensors, biochemical probes, optical and thermal recording materials. The results will investigate donor-acceptor chromophores which have the potential for such colour change processes. In particular, cross-conjugated donor-acceptor chormophores, analogous to indigo and squarylium-type chromophores, will be examined for pH sensitizing and for their oxidation-reduction colour change behaviour.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.24-29
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• 2001

GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

• Korean Journal of Materials Research
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• v.17 no.1
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• pp.1-5
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• 2007

GaN thin fan were grown by spin coated colloidal GaOOH precursor. Polycrystalline GaNs with crystalline size of $10{\sim}100nm$ were grown on $SiO_2$ substrate. The shape of crystallite above $900^{\circ}C$ had the hexagonal plate and column type. X-ray diffraction patterns for them correspond to those of the hexagonal wurtzite GaN. With increasing droplets. i.e, thickness of deposited layers, XRD intensity increased. PL (photoluminescence) spectrum consisted with an weak near band-edge emission at 3.45 eV and a broad donor-acceptor emission band at 3.32 eV. From the low temperature PL measurement on GaN grown at $800^{\circ}C$ that the shallow donor-acceptor recombination induced emission was more intense than the near band-edge excitonic emission.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.89-92
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• 2009

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2010.03a
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• pp.40-40
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• 2010

Studies on attractive color changing property of dye chromophore and fluorophore have been greatly enjoyed in the related industrial and research fields such as optoelectronics, chemosensor, biosensor and so on. The optical property based on D-$\Pi$-A intramolecular charge transfer (ICT) system of chromophore molecules can be utilized as suitable sensing probes for checking media polarity and determining colorimetric chemosensing effect, especially heavy metal detection. These finding are obtained by absorption and emission properties. In this work, donor-acceptor D-$\Pi$-A type fluorescent dyes were designed and synthesized with the corresponding donor and acceptor groups. The selected donor moieties might be provided prominent amorphous properties which are very useful in designing and synthesizing functional polymers and in fabricating devices. Another reasons to choose are commercial availabilities in high purity and low price. Donor-bridge-acceptor (D-A) type dyes can produce impressive optical-physical properties, yielding them potentially suitable for applications in the synthesis of small functional organic molecules. Small organic functional molecules have unique advantages, such as better solubility, amorphous character, and represent an area of research which needs to be explored and developed. Currently, their applications in metalorganic compounds is rapidly expanding and becoming widespread in self-assembly processes, photoluminescence applications, chiral organocatalysts, and ingrafts with nanomaterials. Colloidal nanoparticles have received great attentions in recent years. The photophysical properties of nanoparticles, particularly in terms of brightness, photostability, emission color purity and broad adsorption range, are very attractive functions in many applications. To our knowledge background, colloidal nanoparticles have been enjoyed their applications in bio-probe research fields. This research interest can be raised by the advantages of the materials such as high photoluminescence quantum yields, sharp emission band, long-term photostability and broad excitation spectra. In recent, the uses of nanoparticles being embedded in a polymer matrix and binded on polymer surface have been explored and their properties such as photo-activation and strong photoluminescence have been proposed. The prepared chromophores and nanoparticles were investigated with absorption and emission properties, solvatochromic behaviors, pH induced color switching effects, chemosensing effects and HOMO/LUMO energy potentials with computer simulation. In addition, synthesized fluorophore dyes and particles were applied onto PE/Aramid fiber fluorescing colorations. And the related details were then discussed.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1670-1674
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• 2014

Two red emitters, 2-(7-(4-(diphenylamino)styryl)-2-methyl-4H-chromen-4-ylidene)malonitrile (Red 1) and 2-(7-(julolidylvinyl)-2-methyl-4H-chromen-4-ylidene)malonitrile (Red 2) have been designed and synthesized for application as red-light emitters in organic light emitting diodes (OLEDs). In these red emitters, the julolidine and triphenyl moieties were introduced to the emitting core as electron donors, and the chrome-derived electron accepting groups such as 2-methyl-(4H-chromen-4-ylidene)malononitrile were connected to electron donating moieties by vinyl groups. To explore the electroluminescence properties of these materials, multilayered OLEDs using red materials (Red 1 and Red 2) as dopants in $Alq_3$ host were fabricated. In particular, a device using Red 1 as the dopant material showed maximum luminous efficiencies and power efficiencies of 0.82 cd/A and 0.33 lm/W at $20mA/cm^2$. Also, a device using Red 2 as a dopant material presented the CIEx,y coordinates of (0.67, 0.32) at 7.0 V.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.84-84
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I$_2$ (D$^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3meV The exciton peak, lid, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The I$_1$$\^$d/ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a (V$\sub$se/ - V$\sub$zn/) - V$\sub$zn-/