• Journal of Integrative Natural Science
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• v.3 no.4
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• pp.237-240
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• 2010

Recently, number of studies for porous silicon have been investigated by many researchers. Multistructured porous silicon (PSi), distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by an electrochemical etch of $P^{{+}{+}}$-type silicon wafer of resistivity between 0.1 $m{\Omega}cm$ with square wave current density, resulting two different refractive indices. In this work, We have fabricated a simple and portable organic vapor-sensing device based on DBR porous silicon and investigated the optical characteristics of DBR porous silicon. DBR porous silicon have been characterized by FT-IR, Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to a toxic vapor (TEP, DMMP, DEEP) at room temperature.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.81-89
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• 1999

Among various wavelength conversion technologies, that using the cross-gain modulation in laser diode makes it possible to deal with the high speed signal quite simply and efficiently. In this paper, presented was the applicability of an improved time-domain large-signal dynamic model as a CAD tool to analyzed the characteristics of SSGDBR(Superstructure Grating Distributed Bragg Reflector) laser diodes used for wavelength converters. Using this model, it was shown that this kind of wavelength converter can provide the widely tunable wavelength conversion of the high speed data above 10 Gbps. We also investigated the effect of input optical power and the bias current on the characteristics of the device such as extinction ration and eye diagram. The modeling results show very similar trend to the experimental reports.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.280-286
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• 2006

A distributed Bragg reflector (DBR) for the application of $1.3{\mu}m$ vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.31-36
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• 2004

In comparison with in-plane lasers, predicting the output power and differential quantum efficiency of Vertical-Cavity Surface-Emitting Lasers(VCSELs) is very difficult due to the distributed Bragg reflector(DBR) layers. Therefore, effective cavity model and transfer matrix method have been adapted in order to calculate the output power and differential quantum efficiency The effective cavity model is inappropriate to calculate output power and differential quantum efficiency while it is practically adequate to calculate the threshold gain and threshold current density The reason is that the effective cavity model can not take account of the absorption in GaAs stack layer right below the metal aperture. In this paper, we have compared the threshold current and differential quantum efficiency calculated by using transfer matrix method with effective cavity model and we have made a study of the validity of the effective cavity model. Finally, we have confirmed the versatility of the transfer matrix method with these studies.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.666-672
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• 2003

In this paper, we described the fabrication and the performance of wavelength tunable distributed bragg reflector (DBR) laser diode (LD), having different waveguide coupling mechanisms; integrated-twin-guide (ITG) DBR-LD and butt coupled (BT) DBR-LD. This deviceis fabricated by metal organic vapor phase epitaxy (MOVPE) growth and planar buried heterostructure (PBH)-type transverse current confinement structure. The result of measurement, the optical performance of BT-DBR-LD is better over 2 times than that of ITG-DBR-LD at the variation of threshold current and output power, and slop efficiency due to the higher coupling efficiency of the butt coupled structure than the integrated twin guide structure. The maximum wavelength tuning range is about 7.2nm for ITG DBR-LD and 7.4nm for BT DBR-LD. Both types of lasers have a very high yield of single mode operation with a side-mode suppression ratio of more than 35dB.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.391-396
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• 2006

Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polystyrene to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated polystyrene. Optically encoded DBR PSi/polystyrene composite films retain the optical reflectivity. Optical characteristics of DBR PSi/polystyrene composite films are stable and robust for 2 hrs in a pH=7 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.330.2-330.2
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• 2014

III-V족 화합물반도체는 트랜지스터와 광다이오드, 레이저 등의 광전소자 제작물질로 오랫동안 사용 되어 왔다. III-V 화합물 반도체로 제작된 광전소자의 특성을 향상시키기 위해선 다양한 형태의 표면구조가 필요하며, distributed feedback 레이저나 distributed Bragg reflector 레이저의 경우 높은 aspect-ratio를 가지는 구조를 필요로 한다. 현재까지 높은 aspect-ratio를 가지는 III-V족 화합물반도체 구조제작을 위해 reactive ion etching (RIE) 방식을 사용 하였는데, 이 방법은 ion collision에 의한 표면손상과 더불어 에칭 잔여물이 남아 반도체 표면을 오염시키는 문제점을 가지고 있다. 이를 개선하기 위하여 MaCE (Metal-Assited chemical etching)법이 최근 제안되었는데, 본 연구에서는 MaCE 방법을 통하여 다양한 형태의 GaAs 표면구조를 제작하였다. 본 실험을 통하여 에칭용액 조건에 따라 GaAs의 구조적 특성과 morphology가 달라지는 것을 확인하였다.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.544-547
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• 2006

A time-domain modeling approach is used to study characteristics of a widely tunable coupled-ring reflector (CRR) laser diode(LD). The CRR consists of a bus waveguide and two coupled ring resonators coupled to the bus without resorting to distributed Bragg grating structure. The tuning range can be a few tens of nanometers with a side mode suppression ratio exceeding 35dB through the adjustment of currents into the phase control sections in the rings. The CRR laser diode has long effective cavity length compared to conventional laser diodes. Accordingly, a broad additional resonance peak in the amplitude modulation characteristics is observed between 20 to 30 GHz, implying the extension of amplitude modulation bandwidth.

• Journal of Integrative Natural Science
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• v.8 no.1
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• pp.67-74
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• 2015

Sensing characteristics for porous smart particle based on DBR smart particles were reported. Optically encoded porous silicon smart particles were successfully fabricated from the free-standing porous silicon thin films using ultrasono-method. DBR PSi was prepared by an electrochemical etch of heavily doped $p^{++}$-type silicon wafer. DBR PSi was prepared by using a periodic pseudo-square wave current. The surface-modified DBR PSi was prepared by either thermal oxidation or thermal hydrosilylation. Free-standing DBR PSi films were generated by lift-off from the silicon wafer substrate using an electropolishing current. Free-standing DBR PSi films were ultrasonicated to create DBR-structured porous smart particles. Three different surface-modified DBR smart particles have been prepared and used for sensing volatile organic vapors. For different types of surface-modified DBR smart particles, the shift of reflectivity mainly depends on the vapor pressure of analyte even though the surfaces of DBR smart particles are different. However huge difference in the shift of reflectivity depending on the different types of surface-modified DBR smart particles was obtained when the vapor pressures are quite similar which demonstrate a possible sensing application to specify the volatile organic vapors.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.245-248
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• 2007

We report a novel optical structure for bottomemitting white OLEDs. The structure includes, reformulated color filter, dielectric mirror to enforce cavity resonance, and micro-scatterer to extract more light and diffuse the viewing angle dependency. With the new structure, the color gamut was 104% of that of NTSC, the combined transmission efficiency of the color filter was 83%/3 and the color shift at $45^{\circ}$ was maintained below 0.02 in the 1976 CIE color space. The color performance of White OLED + color filter system can match comparably that of RGB OLED + microcavity system.