• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.109.1-109.1
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• 2015

Understanding the reaction mechanisms and structures underlying the adsorption of biomolecules on semiconductors is important for functionalizing semiconductor surfaces for various bioapplications. Herein, we describe the characteristic behavior of a primary nucleobase adsorbed on the semiconductor Ge(100). The adsorption configuration of guanine, a primary nucleobase found in DNA and RNA, on the semiconductor Ge(100) at an atomic level was investigated using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. When adsorbed on Ge(100) at room temperature, guanine appears dark in STM images, indicating that the adsorption of guanine on Ge(100) occurs through N-H dissociation. In addition, DFT calculations revealed that "N(1)-H dissociation through an O dative bonded structure" is the most favorable adsorption configuration of all the possible ones. We anticipate that the characterization of guanine adsorbed on Ge(100) will contribute to the development of semiconductor-based biodevices.

• Environmental Engineering Research
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• v.16 no.1
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• pp.35-39
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• 2011

An integrated gasification combined cycle (IGCC) system has been attracting attention due to its increased energy conversion efficiency and ability to treat various carbonaceous materials. IGCC is also expected to play an important role in the future supply of hydrogen energy. The use of a palladium-based membrane to separate the hydrogen from the synthesis gas stream has been intensively studied due to its exceptional hydrogen-separating capability. However, theoretical research on hydrogen separation is still an unfamiliar area in Korea. First-principle density functional theory was applied in this study to investigate the dissociative adsorption of hydrogen onto a palladium surface. The stability of hydrogen on the surface was theoretically evaluated with various adsorption configurations, partial pressures and temperatures. Further theoretical and experimental studies were also suggested to find a more hydrogen-selective material.

• Bulletin of the Korean Chemical Society
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• v.15 no.2
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• pp.139-145
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• 1994

The DOS, COOP and O 1s binding energy are calculated for Ni24(100) model surface with oxygen adsorbed on it. The calculation is made with PC/386 using the program obtained by converting EHMACC(VAX version) into PC version. The calculation shows the dissociative adsorption of oxygen molecule, of which the main cause is attributed to the transfer of the $d{\pi}$ and $d{\delta}$ electrons of Ni to the antibonding $1{\pi}_g$ of oxygen molecule. The O ls shift on the adsorption is calculated using the valence potential method, and the results agree fairly good with the experimental values.

• Bulletin of the Korean Chemical Society
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• v.9 no.6
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• pp.388-393
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• 1988

The chemisorption of CO molecules on polycrystalline nickel surface has been studied by investigating the resulting chemisorbed species with the X-ray photoelectron spectroscopy at temperatures between 300K through 433K. It is found that the adsorbed CO molecules are dissociated by the simple C-O bond cleavage as well as by the disproportionation reaction at temperatures above 373K. The former type dissociation is more favored at low coverages and at elevated temperatures. The isotherms of CO chemisorption are obtained from the xps intensities of C 1s peaks, and then the activation energy of the dissociative adsorption is estimated as a function of the CO exposure. These activation energies are extrapolated to zero coverage to obtain the activation energy of chemisorption in which thermal C-O bond cleavage takes place. The value obtained is 38.1 kJ/mol.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.197-197
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• 2011

In this study, in contrast with cases in which Scanning Tunneling Microscopy (STM) tip-induced reactions were instigated by the tunneling electrons, the local electric field, or the mechanical force between a tip and a surface, we found that the tungsten oxide (WO3) covered tungsten (W) tip of a STM acted as a chemical catalyst for the S-H dissociative adsorption of phenylthiol and 1-octanethiol onto a Ge(100) surface. By varying the distance between the tip and the surface, the degree of the tip-catalyzed adsorption could be controlled. We have found that the thiol head-group is the critical functional group for this catalysis and the catalytic material is the WO3 layer of the tip. After removing the WO3 layer by field emission treatment, the catalytic activity of the tip has been lost. 3-mercapto isobutyric acid is a chiral bi-functional molecule which has two functional groups, carboxylic acid group and thiol group, at each end. 3-Mercapto Isobutyric Acid adsorbs at Ge(100) surface only through carboxylic acid group at room temperature and this adsorption was enhanced by the tunneling electrons between a STM tip and the surface. Using this enhancement, it is possible to make thiol group-terminated surface where we desire. On the other hand, surprisingly, the WO3 covered W tip of STM was found to act as a chemical catalyst to catalyze the adsorption of 3-mercapto isobutyric acid through thiol group at Ge(100) surface. Using this catalysis, it is possible to make carboxylic acid group-terminated surface where we want. This functional group-selective adsorption of bi-functional molecule using the catalysis may be used in positive lithographic methods to produce semiconductor substrate which is terminated by desired functional groups.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.132-132
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• 2012

Depositing $CaF_2$[0.6% lattice-mismatch] on the Si(001)-$4^{\circ}$ off surface [composed of a single (001) domain with regularly-arrayed double-layer DB steps and located between (1 1 19) and (1 1 21)] held at $700^{\circ}C$, $CaF_2$ molecules are preferentially adsorbed on the dimers and dissociated to Ca and F atoms. Dissociated Ca atoms form a silicide layer of a $2{\times}3$ structure on the (001) terrace, while F atoms are desorbed from the surface. Once the terrace is covered with a calcium silicide layer, CaF starts to be adsorbed selectively on the steps, as shown in Fig. (a). With $CaF_2$ deposition exceeding 1 ML, the (1 1 17) surface having 1-D $CaF_2$ nanodots are formed as shown in Fig. (b). By the present STM study, it has been clearly disclosed that the calcium silicide interfacial layer is preformed prior to adsorption of $CaF_2$ on vicinal Si(001) surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.112-112
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• 2011

The interaction of water molecules with solid surfaces has been a subject of considerable interests, due to its importance in the fields from atmospheric and environmental phenomena to biology, catalysis and electrochemistry [1,2]. Among various kinds of surfaces, a lot of theoretical and experimental studies have been performed regarding water on MgO(100), however, to date, there has been no direct observation of water molecules on MgO by scanning tunneling microscope (STM) as compared with those on metal surface. Here, we will present the direct observation and manipulation of single water molecules on ultrathin MgO(100) films using low-temperature scanning tunneling microscope (LT-STM) [3]. Our results rationalize the previous theoretical predictions of isolated water molecules on MgO including the optimum adsorption sites and non-dissociative adsorption of water. Moreover, we were able to dissociate a water molecule by exciting the vibrational mode of water, which is unattainable on metal surfaces. The enhanced residual time of tunneling electrons in molecules on the insulating film is responsible for this unique pathway toward dissociation of water.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.59-65
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• 1997

Efficient Si(100) etching by thermal H atoms at low substrate temperatures has been achieved. Gas-phase etching product $SiH_4$(g) upon H atom bombardment resulting from direct abstraction of $SiH_3$(a) by impinging H atoms was detected with a quadrupole mass spectrometer over the substrate temperature range of 105-408 K Facile depletion of all surface silyl ($SiH_3$) groups the dissociative adsorption product of disilane ($Si_2H_6$) at 105K from Si(100)2$\times$1 by D atoms and continuous regeneration and removal of $SiD_3$(a) were all consumed. These results provide direct evidence for efficient silicon surface etching by thermal hydrogen bombardment at cryogenic temperatures as low as 105K We attribute the high etching efficiency to the formation and stability of $SiH_3$(a) on Si(100) at lowered surface temperatures allowing the $SiH_3$(a) abstraction reaction by additional H atom to produce $SiH_4$((g).

• 한국가스학회:학술대회논문집
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• 2005.10a
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• pp.83-87
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• 2005

The kinetics of the direct synthesis of DME was studied under different conditions over a temperature range of $220\~280^{\circ}C$, syngas ratio $1.2\~ 3.0$ All experiment were carried out over hybrid catalyst, composed to a methanol synthesis catalyst (Cu/ZnO/$Al_2O_3$) and a dehydration Catalyst ($\gamma$-Al_2O_3$) The observed reaction rate qualitatively follows a Langmiur-Hinshellwood type of reaction mechanism. Such a mechanism is considered with three reaction, methanol synthesis, methanol dehydration and water gas shift reaction. From a surface reaction with dissociative adsorption of hydrogen, methanol and water, individual reaction rate was determined

• Journal of Korean Society of Environmental Engineers
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• v.35 no.7
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• pp.457-463
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• 2013

The removal of sulfonamide antibiotics (SAs) by activated carbon was investigated by using granular activated carbon (GAC) tests and density functional theory (DFT) simulations. The GAC absorption tests show the removal efficiency of 68.4~90.7% and 99.0~99.9% in 1 and 24 hours, respectively. In both GAC tests, the removal efficiency of sulfamethazine (SMZ) was the highest followed by those of sulfathiazole (STZ) and sulfamethoxazole (SMTZ): SMZ > STZ > SMTZ. In DFT adsorption simulations, we found that the 4-aminobenzenesulfonamide parts of SMZ and STZ and the 3-methyl-1,2-oxazol-5-amine part of SMTZ are preferentially adsorbed on the edges of graphene model, provided that the adsorbates keep their structures without dissociation upon adsorption process. The adsorption energies of SMZ, STZ, and SMTZ are -4.91, -4.64, and -4.62 eV, respectively. This adsorption strength (SMZ > STZ > STMZ) agrees with the trend of the removal efficiency of SAs by GAC. In addition, dissociative adsorption configurations of SAs are discussed.