• Journal of Information Display
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• v.4 no.4
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• pp.19-24
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• 2003

By using vacuum in-line driving and photoluminescence measuring system, we have examined the electrical and optical characteristics of plasma display panel produced by vacuum in-line sealing technology. In addition, the relationship between luminous efficiency and base vacuum level before filling discharge gas was analyzed. In the case of base vacuum level of $1.33{\times}10^{-1}$ Pa, the firing voltage of a 2-inch diagonal PDP panel was ranged from 312 to 343 V depending on the discharge gas pressure of $2.667{\times}10^4$ to $4{\times}10^4$ Pa at room temperature, Whereas in the case of $1.33{\times}10^{-4}$ Pa, the firing voltage was reduced by 40 V and luminescence was improved slightly.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.633-636
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• 2008

A series novel films of polyimide (PI) and co-polyimide (Co-PI) containing fluorine with colorless, flexible properties was prepared by a two-step process from various commercial aromatic monomers such as 4,4'-(Hexafluoro iso propylidene) diphthalic anhydride (6FDA), 2,2'-Bis(Trifluoromethyl) benzidine (TFDB), 2,2-bis(3-amino-4-hydroxyphenyl) hexafluoropropane (AH6FP) and Bis(4-(3-aminophenoxy)phenyl)sulfone (BAS). Furthermore, these obtained transparent and flexible Co-PI films exhibited excellent thermal stability with the decomposition temperature (at 5% weight loss) around of $500^{\circ}C$ and the glass transition temperature ($T_g$) in the range of $275-350^{\circ}C$.

• Journal of Information Display
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• v.8 no.4
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• pp.10-14
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• 2007

LCD performance is generally evaluated in terms of luminance and color versus viewing angle. In the present paper, we show that this type of display can be favorably characterized in terms of polarization. We show that ELDIM EZContrast instrument which is routinely used for viewing angle measurements can be upgrade for measuring the polarization state of the light at each incidence and azimuth angle. More precisely, the degree of polarization of light, its ellipticity and polarization direction can be measured at each incidence angle between 0 and $88^{\circ}$ and for all the azimuth angles (from 0 to $360^{\circ}$). Important differences between the displays can be detected and related to their internal structures when luminance and color profiles are quite similar. The same setup can also be used to characterize optical components of the LCDs.

• Journal of the Korean Chemical Society
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• v.49 no.2
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• pp.233-238
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• 2005

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.859-862
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• 2008

We present a new tool to measure precisely the emissive properties of displays at the pixel level with submicrometric spatial resolution. It is useful to check the technological defects and their impact on the emissive properties of the displays. Backlight films and transflective and reflective displays are measured.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1428-1428
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• 2005

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.212-213
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• 2004

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.40.2-40
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.111-111
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• 1997

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.13-17
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• 2009

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.