• Clinics in Shoulder and Elbow
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• 제21권3호
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• pp.169-175
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• 2018

Traumatic anterior dislocation of the shoulder is one of the most common directions of instability following a traumatic event. Although the incidence of shoulder dislocation is similar between young and elderly patients, most studies have traditionally focused on young patients due to relatively high rates of recurrent dislocations in this population. However, shoulder dislocations in older patients also require careful evaluation and treatment selection because they can lead to persistent pain and disability due to rotator cuff tears and nerve injuries. This article provides an overview of the nature and pathology of acute primary anterior shoulder dislocation, widely accepted management modalities, and differences in treatment for young and elderly patients.

• 소성∙가공
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• 제6권3호
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• pp.213-220
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• 1997

The microstructure of the inconel 690 alloy was varied by the solution treatment and the thermal treatment. The specimens having different microstructures were examined in order to understand the strengthening mechanism of the inconel 690. The level of supersaturation of carbon in the solid solution was increased by applying a longer solution treatment at 115$0^{\circ}C$. As increased carbon content in the solid solution, more carbides precipitated during the thermal treatment at $700^{\circ}C$. Since the carbides played a role of obstacle on the movement of dislocations, a higher tensile strength was obtained in the sample having a large number of carbider. The accumulation of dislocations at the grain boundary carbides caused the development of intergranular fracture which led to a lower elongation.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1794-1799
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• 2008

The effect of misfit on the indentation behaviour of silver coated copper multilayer was studied by molecular dynamics simulation. It was found that the misfit bands on interface formed by the mismatch of lattice structure between copper and silver in slip direction [110] and the dislocation band width depended on the mismatched lattice constants of materials. More dislocations were created and glided by indentation, which created a "four-wing flower" structure consisting of pile. up of dislocation at the interface. The size of "flower" depended on the thickness of silver layer. The critical thickness for "flower" was approximately 4nm above which the "flower" disappeared. As the result, deformation mechanisms such as dislocation pile-up, dislocation cross-slip and movement of misfit dislocation were revealed. Only silver atoms in the dislocation pile-up were involved in the creation of the "flower" while the dislocations in copper were glided in slip direction on interface.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집A
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• pp.298-303
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• 2001

The critical thickness of an epitaxial film on a substrate in electronic or optoelectronic devices is studied on the basis of equilibrium dislocation analysis. Two geometric models, a single dislocation and an array of dislocations in heteroepitaxial system, are considered respectively to calculate the misfit dislocation formation energy. The isotropic linearly elastic stress fields for the models are obtained by means of complex potential method combined with alternating technique, and are used for calculating the formation energies. As a result, the effect of elastic mismatch between film and substrate on critical thickness is presented and $Si_xGe_{1-x}/Si$ epitaxial structure is analyzed to predict the critical thickness with varying germanium concentration.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• Journal of Trauma and Injury
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• 제26권3호
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• pp.229-232
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• 2013

Traumatic fracture-dislocations of the hip frequently result from high-energy injury, and hip dislocations are commonly associated with severe concomitant injuries. Sciatic nerve injury often accompanies traumatic fracture-dislocation of the hip, but neurologic examination at the time of injury is difficult in severely traumatized patients with decreased consciousness. We present such a case of multiple traumas with traumatic hip dislocation and sciatic nerve injury after reduction, and we found that magnetic resonance image (MRI) played an important role in developing a management plan.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2002년도 춘계학술강연 및 발표대회
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• pp.11-11
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• 2002

Plastic deformation was observed by TEM around the intragranular SiC particles in the $Al_2O_3$ matrix for $Al_2O_3/SiC$ nanocomposite system. The dislocations are generated at selected planes and there is a tendency for the dislocations to form a subgrain boundary structure with low-angel grain boundaries and networks. In this study, dislocation generated in the $Al_2O_3$ matrix during cooling down from sintering temperatures by the highly localized thermal stresses within and/or around SiC particles caused from the thermal expansion mismatch between $Al_2O_3$ matrix and SiC particle was observed. In monolithic $Al_2O_3$ and $Al_2O_3/SiC$ microcomposite system. These phenomena is closely related to the plastic relaxation of the elastic stress and strain energy associated with both thermal misfitting inclusions and creep behaviors. The plastic relaxation behavior was explained by combination of yield stress and internal stress.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.296-301
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• 2004

By the purpose to investigate the change of internal stress and mobile dislocation density in creep, the stress relaxation test is carried out in the condition of each strain. Mobile dislocation density increased until it reached minimum creep rate and after that, it decreased and internal stress didn't have the change approximately until it reached minimum creep rate and after that, it decreased. The stress relaxation rate is fast and approached zero after 1.5 seconds after the beginning of the stress relaxation. And the larger the applied stress is, the larger the internal stress is. By the evaluation of mobility of dislocation, the dislocations glide viscously in STS31OJlTB but it is the dislocations glide viscously which N passes by cutting Cr atom rather than typical viscosity movement after calculating mobility of dislocation.

• 한국결정학회지
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• 제7권2호
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• pp.156-164
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• 1996

GaAs ∑19, {331}/{331} [110]과 ∑3 {111}/{111} [110] 기울임입계의 구조적 특징을 고분해투과전자현미경을 이용하여 분석하였다. 이 입계들은 격자일치점의 면밀도가 높은 결정면을 평행하게 놓여 있으며, 특정한 원자배열단위를 나타낸다. 입계에서 관측된 이차입계전위들의 코어 직경의 약 2nm정도이며 이들이 놓인 입계부분에서 입계계단이 생성된다. 이들 입계계단과 이차입계전위의 상관관계를 DSC격자를 이용하여 고찰하였다.

• 한국재료학회지
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• 제10권11호
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• pp.784-788
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• 2000

The Vickers microhardness was measured on the basal (0001) plane of sapphire single crystals in the temperature range from 25$^{\circ}C$to 1000$^{\circ}C$. The substructure surrounding the indents was investigated using selective chemical polishing and etching, optical microscopy, and trasmission electron microscopy (TEM). At room temperature, cracks were predominant, and at intermediate temperatures (400$^{\circ}C$and 600$^{\circ}C$), extensive rhombohedral twinning was observed. On the other hand, at higher temperatures, prism plane slip bands on prism plane {1120}(원문참조) were dominant in the microstructure. TEM observations revealed that the dislocation substructure at the vicinity of the indents consisted of fairly straight dislocations lying in basal and/or prism planes and aligned along the <1100> and <1120> directions. The details of the glide dissociation of perfect <110> screw dislocations into three collinear 1/3<1100> partials on the prism plane and the Peierls potential for sapphire single crystals were discussed.