• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.424-427
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• 2003

We have investigated the microstructural analysis of epitaxial lateral overgrowth (ELO), pendeoepitaxy (PE), and superlattice structures used as technology for the reduction of structural defects like dislocation in nitride semiconductors using transmission electron microscopy. We confirmed that the regrowth process such as ELO and PE is very effective technique on the reduction of threading dislocation (less than $10^6/cm^2$) in the specific area. However, to decrease the defect density in the whole nitride films and the suppress the generation of defect by regrowth, we should find the optimized conditions. Besides, the process using double PE and AlGaN/GaN superlattice structure showed no effect on the defect reduction up to now.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• 마이크로전자및패키징학회지
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• 제9권3호
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• pp.49-56
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• 2002

본 연구에서는 평탄형 (exact) GaAs 기판과 $2^{\circ}$, $6^{\circ}$, $10^{\circ}$ 경사형 (offcut) GaAs 기판 등 네 종류의 기판에 유기금속 기상성장장치를 이용하여 InGaP 에피막을 성장시켰고, 기판경사도에 따른 계면의 탄성특성이 InGaP 에피막의 전위밀도에 미치는 영향에 대하여 최초로 연구하였다. 탄성변형은 TXRD의 격자부정합과 격자 misfit등을 고려하여 산출되었고, 전위밀도는 에피막의 x-선 반치폭을 이용하여 계산되었다. 기판경사도가 $6^{\circ}$일 때 계면의 탄성특성이 가장 양호하였고, x-선 반치폭은 가장 낮았다. 11 K PL측정 결과, 기판경사도 증가에 따라 PL 발진파장은 감소하였고, 기판경사도가 $6^{\circ}$에서 PL 강도 역시 가장 높았다. 에피막의 TEM 관측 결과, 회절패턴은 전형적인 zincblende 구조를 보였고, 기판경사도 $6^{\circ}$에서 전위밀도가 가장 낮게 관측되어 TXRD 및 저온 PL측정 결과와 부합되었다. 본 연구의 결과와 소자제작 특성 및 빔특성을 종합적으로 고려해 볼 대, 광전소자용 InGaP/GaAs 이종접합구조에서 최적의 기판경사도는 $6^{\circ}$임을 밝혔다.

• 한국재료학회지
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• 제4권3호
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• pp.349-356
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• 1994

재료의고온소성변형과 수명예측 및 수명향상을 위하여 재료의 변형기구를 규명하는 것이 매우 중요하다. 이를 위하여 전위환모델이 자주 사용되며, 현재 실험적인 결과를 토대로 한 두개의 중요한 전위환모델로서, Orlova등고 Mills등이 제시한 모델들이 있다. 이들은 모두AI-5.5at.%MG을 사용하였으나 상호 상반된 전위환모델을 설명하고 있다. 그러므로 본 연구에서는 상반된 전위환 모델을 확인하기 위하여 AI-5.5at.%MG을 사용하여 573K의 약 30MPa에서 $\varepsilon$=0.03까지 크\ulcorner시험을 하고, 이러한 크\ulcorner시험후 이어서 각각 약 15,10 및 oMPa의 응력감소 시험도 수행하였으며, 동시에 응력감소 시험 전과 후의 전위구조를 관찰하여 전위환모델을 고찰하였다.

• 한국주조공학회지
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• 제40권4호
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• pp.118-127
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• 2020

Microstructural evolution during a heat treatment and high-temperature tensile properties have been investigated in conventionally cast CM247LC. In as-cast specimens, MC carbides with high amounts of Ta, Ti, Hf, and W were found to exist in the interdendritic regions, and γ' was observed in the form of cubes and octocubes prior to decomposition into cubes. In the heat-treated condition, some portion of eutectic γ-γ' remained, and uniform cubic γ' was observed in both interdendritic regions and dendrite core. Three types of carbides with different stoichiometries and compositions were found at the grain boundaries. MC carbides with high Hf contents were observed in the vicinity of eutectic γ-γ'. The highest tensile strength value was found at 750℃, whereas the greatest ductility appeared at 649℃. The effect of the temperature on the tensile properties was closely related to the dislocation structure. With increase in the test temperature, the density of dislocations inside γ' decreased, whereas that in the γ matrix increased. Stacking faults generated in γ' at 750℃ had a strengthening effect, whereas thermally activated dislocation motion at a high temperature was considered to have the opposite effect.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 춘계학술대회논문집
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• pp.49-52
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• 2003

The effects of nitrogen on the deformation behavior of duplex stainless steel have been studied The variation of strength was correlated with the characteristic microstructures. Analysis based on Hall-Petch relation confirmed that nitrogen enhances phase-boundary strengthening effect. The evolution of dislocation structure, slip traces, and misorientation distribution during deformation were also characterized to elucidate the effect of nitrogen on inelastic deformation mechanism.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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• pp.72-72
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• 2004

대부분의 금속 재료는 제조 공정 중에 인장, 압축, 압연, 압출, 인발 등 소성 변형을 수반하는 가공의 단계를 거치게 된다. 가공 단계에서 가해준 변형률 및 이에 따라 형성된 전위구조 등은 생산재의 기계적 성질에 많은 영향을 미친다. 그리고 소성 변형이 수반되는 또 하나의 과정은 피로, 크리프 손상 등의 소성 변형을 수반하게 되는 기계적 손상이다 이러한 기계적 손상에 의해서도 전위가 도입되며, 전위의 집적부위에서 균열이 생성되기도 한다. 따라서 기계적 손상을 비파괴적으로 평가하는데 있어서도 소성 변형의 영향을 파악하는 것이 하나의 중요한 문제가 된다.(중략)

• 한국언어정보학회지:언어와정보
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• 제17권2호
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• pp.67-91
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• 2013

This paper describes Korean Nominal Bank, a project that provides argument structure for instances of the predicative nouns in the Sejong parsed Corpus. We use the language resources of the Sejong project, so that the same set of data is annotated with more and more levels of annotation, since a new type of a language resource building project could bring new information of separate and isolated processing. We have based on the annotation scheme based on the Sejong electronic dictionary, semantically tagged corpus, and syntactically analyzed corpus. Our work also involves the deep linguistic knowledge of syntaxsemantic interface in general. We consider the semantic theories including the Frame Semantics of Fillmore (1976), argument structure of Grimshaw (1990) and argument alternation of Levin (1993), and Levin and Rappaport Hovav (2005). Various syntactic theories should be needed in explaining various sentence types, including empty categories, raising, left (or right dislocation). We also need an explanation on the idiosyncratic lexical feature, such as collocation and etc.

• 한국세라믹학회지
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• 제31권3호
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• pp.249-256
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• 1994

By surface structure and X-ray topographic observation, growth mechanism of NAB single crystal grown by TSSG technique using a BaB4O7 flux was studied. Surface structure of grown crystals were investigated by optical microscope. Growth history and crystal defects included within grown crystal were investigated using X-ray topography. The {001} faces were grown by 2-D nucleation growth. As decreasing cooling rate, growth mechanism of {111} and {11} was changed from 2-D nucleation growth to the growth by screw dislocation. Only surface striations developed parallel to a-axis were observed on {010} faces. Growth sector of NAB crystals were divided into {001}, {111}, {010}, {021}, {11}. The inclusion which was usually trapped between {001} faces was investigated.