• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.9
• /
• pp.421-426
• /
• 2005

A wire-plate discharge system with a slit barrier has been proposed and investigated experimentally by focusing on the discharges on the slit barrier and ozone generation characteristics. This wire-plate discharge system with a slit barrier can generate an intensive corona discharges, and produce corona discharge twice, once from the corona wire electrode and second time from the surface and the slits of the slit dielectric barrier. As a result this propose wire-plate discharge system with the slit barrier can produce greatly increased ozone than without the slit barrier. This type of wire-plate discharge system with the slit barrier could be used for effective ozone generation as a means with retard to the removal of pollutant gas

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.2
• /
• pp.91-97
• /
• 2003

In addition to its strong oxidizing power, the ozone has definite advantages over other commercial oxidants, namely, no undesirable by- products or residues are formed. With growing interest in the improvement of the ozone production in the industrial fields, many types of ozonizer using the electrical discharges have been proposed for the higher efficiency and the higher Performance at atmospheric Pressure. Among them, a superposition of different type discharges has been proposed. Especially, since the improvement for the low efficiency of dc discharge and narrow gap of surface discharge is required, a do and an at voltage are applied to same reaction space (or volume) to increase energy density at the same space. An investigation was focused on the superposition with a dc (streamer) corona and 3 surface discharge. This paper describes the investigation results on fundamental ozone generation characteristics by this superimposed discharge.

• International Journal of Fluid Machinery and Systems
• /
• v.6 no.3
• /
• pp.121-136
• /
• 2013

This paper reports the 1-D fluid transient simulation results of the discharge flow conditions in a 6-cylinder reciprocating slurry pump. Two discharge manifold configurations are studied comparatively; a case with a hexagon shaped discharge manifold where each cylinder discharges at a single vertex, and a case where all the cylinders discharges are lumped together into a tank shaped manifold. In addition, the study examines the effect of two pulsation mitigation measures in the case of hexagonal manifold; a single inline orifice in one of the hexagon sides and a volumetric dampener at the manifold outlet. The study establishes the pressure and flow fluctuation characteristics of each configuration and decouples the pulsation characteristics of the pump and the discharge manifold.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.5
• /
• pp.231-237
• /
• 2001

Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

• Journal of Information Display
• /
• v.3 no.4
• /
• pp.13-18
• /
• 2002

In general, the background light that is produced during the reset period deteriorates the dark room contrast ratio in AC PDP. In this paper, we propose a modified ramp reset pulse that can reduce the background light to an imperceptible level. In the new reset waveform, the discharges between the scan and sustain electrodes are minimized by applying a positive bias voltage to the sustain electrode and only the weak discharges between the scan and address electrodes are found to occur during the reset period. We also adopted the MgO coated phosphor layer to improve the address voltage margin that was reduced when the bias voltage in the modified ramp reset waveform was applied. As a result, the address voltage margin of 45 V which is the same level of the conventional method was ortained and the dark room contrast ratio was improved up to 7500 : 1.

• Journal of Electrical Engineering and Technology
• /
• v.10 no.4
• /
• pp.1734-1737
• /
• 2015

Insulating characteristics of Cl₂-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl₂-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)_lim, for these binary gas mixtures were also derived and compared with those of the pure SF₆ gas.

• Journal of Hospice and Palliative Care
• /
• v.4 no.2
• /
• pp.161-164
• /
• 2001

Elephantiasis, which is the final stage of lymphedema, has swelling, papillomas and discharges in the skin. Although this disease is recorded in literature since 50 AD, the treatment is not yet. After all this time, complex lymphedema therapy (CLT) involving lymphatic massaging, bandaging, exercise, and skin care is becoming recognized as the best approach to care for people who develop lymphedema. The patient was a 30-year-old male who complained of swelling, papillomas, and discharges on left leg. He was received with CLT for 2 months, and the symptoms of him were improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.1
• /
• pp.26-33
• /
• 2001

The proposed system was composed of pre-processor which was executing binary/high-pass filtering and post-processor which ranged from statistic data to prediction. In post-processor work, step one was filter process of image, step two was image recognition, and step three was destruction degree/time prediction. After these processing, we could predict image of the last destruction timestamp. This research was produced variation value according to growth of tree pattern. This result showed improved correction, when this research was applied image Processing. Pre-processing step of original image had good result binary work after high pas- filter execution. In the case of using partial discharge of the image, our research could predict the last destruction timestamp. By means of experimental data, this prediction system was acquired $\pm$3.2% error range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.900-903
• /
• 2002

Partial discharges(PD) in air, corona discharges, deteriorate the insulation strength. So, it is necessary to detect PD at an early stage before the system failure and extensive damage to the equipment. PD emit signals which can be detected by applying an capacitive electric field diagnosis. In this paper, We measured signals by capacitive electric field sensor and analyzed FFT from PD, and then compared conventional electric PD detecting method to capacitive electric field diagnosis by $\Psi-q-n$, $\Psi-v-n$, $\Psi-n$, $\Psi-q$ distributions.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.3
• /
• pp.102-105
• /
• 2001

A parametric cmpariosn of etch rate and etch selectivity has been performed for GaN, InN and AIN etched in chlorine- and boron halides-based Inductively Coupled Plasma (ICP) discharges. Chlorine-based chemistries produced controllable etch rates (50~150 nm/min) and maximum etch selectivities ~6 for InN over GaN and ~10 for InN over AlN. Maximum etch selectivities of ~100 for InN over GaN and InN over AlN were obtained in boron halides-based discharges and smooth etched surface morphologies were also achieved.