• Nuclear Engineering and Technology
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• 제53권3호
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• pp.732-740
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• 2021

Scattering resonance of medium mass nuclides leads complex spectrum in the fast reactor, which requires thousands of energy groups in the spectrum calculation. When the broad-group cross sections are collapsed, reaction rate cannot be completely conserved. To eliminate the error from energy collapsing, the Super-homogenization method in energy collapsing (ESPH) was employed in the fast reactor code SARAX. An ESPH factor was derived based on the ESPH-corrected SN transport equation. By applying the factor in problems with reflective boundary condition, both the effective multiplication factor and reaction rate were conserved. The fixed-source iteration was used to ensure the stability of ESPH iteration. However, in the energy collapsing process of SARAX, the vacuum boundary condition was adopted, which was necessary for fast reactors with strong heterogeneity. To further reduce the error caused by leakage, an additional conservation factor was proposed to correct the neutron current in energy collapsing. To evaluate the performance of ESPH with conservation factor, numerical benchmarks of fast reactors were calculated. The results of broad-group calculation agreed well with the direct full-core Monte-Carlo calculation, including the effective multiplication factor, radial power distribution, total control rod worth and sodium void worth.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• 한국방사선학회논문지
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• 제2권3호
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• pp.19-25
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• 2008

현재 기존의 아날로그 형태의 필름/스크린 방식은 영상 저장 및 전송 등의 문제점이 대두되면서, X선에 반응하여 전하 캐리어를 생성시키는 광도전체 물질을 사용하는 직접 방식의 디지털 방사선 검출기로의 연구가 활발히 이루어지고 있다. 본 논문에서는 광도전체 물질인 Lead Oxide와 기존에 많이 연구가 진행 되었던 Lead(II) Oxide를 PIB(Particle In Binder) 방식으로 각각 제작하여 그 전기적 특성을 비교 평가하고자 하였다. 기존의 논문 중 물질의 입체각에 관한 논문에 따르면 정방계의 물질이 사방정계의 물질보다 좋은 특성을 보인다는 것을 기반으로 하여 PbO가 정방계의 ${\alpha}$-PbO와 사방정계의 ${\beta}$-PbO를 비교하였다. 정방계의 ${\alpha}$-PbO와 ${\beta}$-PbO를 PVB(Poly Vinyl Butyral)를 이용한 바인더를 사용하여 PIB(Particle In Binder) 방법으로 제조된 각 시편의 민감도(X-ray sensitivity), 누설전류(Leakage current) 및 SNR(Signal to Noise Rate)와 같은 전기적 특성을 실험을 통해 확인 비교한 것이다. 그리고 시편의 물리적인 특성을 보기 위한 기본적인 SEM(Scanning Electron Microscope) 사진을 촬영하였다. 본 논문에서는 완벽한 ${\alpha}$-PbO를 제작하지 못하였으므로 차후 물질을 제작하는 것에 대한 연구가 더 필요할 것으로 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• 한국전자파학회논문지
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• 제26권4호
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• pp.381-388
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• 2015

본 논문에서는 TV 유휴대역에서 가능한 응용서비스중 하나로서, UHF 대역(470~806 MHz)에서 동작하는 무선 영상전송 시스템을 구현하였다. 이 시스템은 RF 송수신기 모듈, 디지털 모뎀, 카메라, 스크린으로 구성된다. RF 송수신기와 디지털 모뎀을 연동하여 VGA급 화질의 카메라 영상을 2.6 인치 LCD 스크린에 표시하는 방식이다. RF 송수신기 구조는 크기와 비용을 줄이기 위해 직접변환 방식을 채택하였다. 성능지표인 Image Leakage를 향상시키기 위하여 PLL의 출력에 3차 하모닉 제거필터를 사용하였으며, DC offset 문제 해결을 위해 DAC 출력노드에 Current steering technique을 이용하여 공통모드 전압을 조절하게 하였다. 또한, 채널대역폭은 국가별 표준을 맞게 6, 7, 8 MHz 중 선택이 가능하다. 출력 파워와 수신감도는 각각 +10 dBm, -82 dBm이다. 디지털모뎀은 Kintex-7급 FPGA에서 구현하였다. QPSK와 512ch OFDM 변조를 기반으로 전송속도는 약 9 Mbps이다. 개발된 송수신 모듈을 이용하여 VGA급 화질을 무선으로 송수신하는데 성공하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.440-443
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• 2002

Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.

• 패션비즈니스
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• 제20권6호
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• pp.94-110
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• 2016

A necessity for infants, diapers are not only used over long durations, but are also in direct contact to the infants' skin, making the choice of diaper to be of utmost importance. Current interest in cloth diapers is rapidly increasing because of issues concerning the baby's health, green environment, and economy. However, previous researches on cloth diapers are limited to simply investigating the form and material of commercial cloth diapers. There are few in-depth researches for the optimal cloth diaper development. This is therefore a fundamental research for the development of optimized cloth diapers, and analyzes the difference in absorption depending on the placement of seam line (liner, darts, and I pattern), the locations of liquid spraying (1 cm and 8 cm ahead of the center), and the amount of liquid capacity (10 and 20 ml). Currently, the development of diaper patterns considers the crotch shape of the infants and the skin length deformation. As a result, in the case of the I-pattern, the horizontal seam line prevents water from spreading to the front and back, thus reducing the absorbed area. This result was more clearly visible when water was sprayed at the center. The effect of the seam line became more obvious when there was more water (20 ml); also, when water was sprayed at the center, more leakage was observed. Using the results of this research, implementation of horizontal seam is expected to prevent the upward spread of urine.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2008년도 춘계 학술발표회 초청강연 및 논문집
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• pp.938-946
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• 2008

This study is on sealing leakage holes where are in landfills to make clay cakes with clay particles, which have a negative surface charge using the method of electrophoresis. Generally, electrophoresis is the motion of charged particles in a colloid under the influence of an electric field; particles with a positive charge go to the cathode and negative to the anode. In this study in order to develop the prevention system of leakages of the leachate in landfills, one-dimensional electrophoresis tests were conducted for determining the properties of the motion of the electrophoresis and cutoff using the method of electrophoresis depending on various the effect factors such as types of clays, concentrations of the clays, and applied electric field. In case of the experiments of determining the optimum clays, Na and Ca-Bentonite, Na and Ca-Montmorillonite, which have greater zeta-potential, cation, exchange capacity as well as ability of cutoff, and Micro-cement inducing cementation were chosen and then the effect of those clays was investigated. Moreover, the properties of the motion and settling of the clays were investigated following electric field varied from 0 to 1V/cm at different concentration of the clays in order to determine both the properties of the motion of the clays and the efficiency of electric field when applying different direct current. Ultimately, the ability of cutoff was examined through measuring the permeability of the clay cakes derived from the one-dimensional electrophoresis tests.

• 한국결정성장학회지
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• 제13권6호
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• pp.272-278
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• 2003

초음파 분무에 의한 유기금속 화학증착법 (MOCVD)법으로 $Bi_4Ti_3O_{12}$(BIT)와 Bi와 Ti 대신에 La과 V을 동시에 치환시킨 ($Bi_{3.75}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV)박막을 ITO/glass 기판 위에 증착하였다. 산소 분위기에서 30분 동안 증착한 후, RTA 방식의 직접삽입법으로 열처리를 하였다. 박막은 페로브스카이트상 생성 온도, 미세구조, 전기적 성질에 관해서 조사하였다. XRD(X-Ray diffraction) 측정결과 BLTV 박막의 페로브스카이트상 생성 온도는 약 $600^{\circ}C$로써 BIT의 $650^{\circ}C$보다 더 낮았다. BLTV 박막의 누설전류는 인가전압 1 V에서 $1.52\times10^{-19}$ A/cm^2$로 측정되었다 또한, $650^{\circ}C$에서 증착했을 경우 잔류 분극값이 $5.6\mu$C/$cm^2$, 항전계값 96.5 kV/cm으로 명확한 강유전성을 보이고 있다.