• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.24.2-24.2
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• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

• Current Photovoltaic Research
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• v.7 no.1
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• pp.1-8
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• 2019

The $Cu(In,Ga)Se_2$ (CIGS) thin film obtained by two-step process (metal deposition and Se annealing) has a rough surface morphology and many voids at the CIGS/Mo interface. To solve the problem a precursor that contains Se was employer by depositing a (In,Se)/(Cu,Ga) stacked layer. We devised a two-step annealing (vacuum pre-annealing and Se annealing) for the precursor because direct annealing of the precursor in Se environment resulted in the small grains with unwanted demarcation between stacked layers. After vacuum pre-annealing up to $500^{\circ}C$ the CIGS film consisted of CIGS phase and secondary phases including $In_4Se_3$, InSe, and $Cu_9(In,Ga)_4$. The secondary phases were completely converted to CIGS phase by a subsequent Se annealing. A void-free CIGS/Mo interface was obtained by the two-step annealing process. Especially, the CIGS film prepared by vacuum annealing $450^{\circ}C$ and subsequent Se annealing $550^{\circ}C$ showed a densely-packed grains with smooth surface, well-aligned bamboo grains on the top of the film, little voids in the film, and also little voids at the CIGS/Mo interface. The smooth surface enhanced the cell performance due to the increase of shunt resistance.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.77-81
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• 2020

Commercialization of flexible OLED displays, such as rollable and foldable displays, has attracted tremendous interest in next-generation display markets. However, during bending deformation, cracking and delamination of thin films in the flexible display panels are the critical bottleneck for the commercialization. Therefore, measuring mechanical properties of the fragile thin films in the flexible display panels is essential to prevent mechanical failures of the devices. In this study, tensile properties of the metal and ceramic nano-thin films were quantitatively measured by using a direct tensile testing method on the water surface. Elastic modulus, tensile strength, and elongation of the sputtered Mo, MoTi thin films, and PECVD deposited SiN_x thin films were successfully measured. As a result, the tensile properties were varied depending on the deposition conditions and the film thickness. The measured tensile property values can be applied to stress analysis modeling for mechanically robust flexible displays.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• The Journal of Korean Academy of Prosthodontics
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• v.43 no.1
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• pp.78-94
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• 2005

Purpose. The purpose of this study was to compare the effects of various surface treatments by measuring resonance frequency and histomorphometric analyses. Material and methods. In 5 adult dogs, the mandibular premolar were extracted. Six months later, 30 screw titanium implants (Dentium Co., Seoul, Korea) 6mm in length and 3.4mm in diameter, were placed in the mandibles of 5 dogs. Implants were divided into five groups following to surface treatment methods ; Group 1 is machined controls, Group 2 is sandblasted with large grit and acid-etched (SLA), Group 3 is anodized (Autoelectric Co., Korea, 660Hz, Duty10), Group 4 is hydroxyapatite(HA) coated by ion beam assisted deposition(E-beam), Group 5 is hydroxyapatite(HA) coated with Sol-gel coating process. Resonance frequency was measured implant placement immediately, and 3, 6 weeks and 10 weeks of healing perods. With the animal subject's sacrifice 10 weeks after implantation, implants were removed on bloc and histologic and computer-based histomorphometric analyses were performed. Histomorphometric analysis involved quantification of the entire bone to metal contact around the implants. Statistical analyses were performed using the SPSS for Windows (ver. 9.0 SPSS Inc.) Statistical differences were considered significant at P<0.05. Results. The results were as follows : 1) In five groups, mean value of resonance frequency analysis(RFA) were highest in group 5 (Sol-gel implant) at implantation and those of group 4 (E-beam)was highest at 10 weeks . but there was no correlation between surface treatments and RFA. 2) In all surface treatment groups, the RFA values of implants decreased until 3 weeks and increased to 10 weeks. 3) The percentage of direct bone-to-implant contact (BIC) had statistical significance between five groups in cancellous bone, (P<0.05) the percentage of bone density inside the thread had no statistical significance between five groups. (P>0.05) 4) There was a significant difference between cortical bone and cancellous bone in BIC. (P<0.05) and bone density. (P<0.05) 5) There was a correlation between the RFA value of implants at 10 weeks and BIC in cancellous bone, and between the RFA value of implants at 10 weeks and bone density in cortical bone. (P<0.05). Conclusions. These results indicate that surface treatment does not affect the implant stability in case of good bone quality.