• Proceedings of the IEEK Conference
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• 2000.06e
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• pp.106-109
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• 2000

The diode characteristics for therapy radiation sensor have been studied by irradiating therapy radiation from the MM22 microtron accelerator. Signal processing has been performed in the pulse mode which can process the signal fast. We have designed integrator, peak detector and synchronization circuit to detect diode signal in the pulse mode for implementation of portal image. We also read the diode signal by A/D board and displayed the peak value with LabView program. Because the quality of portal image obtained by film in the case of therapy radiation is much worse than that of diagnostic film, Digital radiography system by rectifier diode detector was suggested for portal Image.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.5
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• pp.644-651
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• 2009

In this paper, the design results of a $22.5^{\circ}$ diode phase shifter for the RADANT lens and two $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layer shows about $2^{\circ}$ phase shift error.

• Current Optics and Photonics
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• v.1 no.2
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• pp.113-117
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• 2017

With the increasing use of high-power laser diode bars (LDBs) and stacked LDBs, the issue of thermal control has become critical, as temperature is related to device efficiency and lifetime, as well as to beam quality. To improve the thermal resistance of an LDB set, we propose and analyze a bypass heat sink with a top canopy structure for an LDB set, instead of adopting a thick submount. The thermal bypassing in the top-canopy structure is efficient, as it avoids the cross-sectional thermal saturation that may exist in a thick submount. The efficient thickness range of the submount in a typical LDB set is guided by the thermal resistance as a function of thickness, and the simulated bypassing efficiency of a canopy is higher than a simple analytical prediction, especially for thinner canopies.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.336-336
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• 2011

AMOLED에 대한 관심이 높아짐에 따라 LTPS (Low Temperature Poly Silicon) TFT에 대한 연구가 활발히 이루어지고 있다. 다결정 실리콘은 단결정 실리콘에 비해 100 cm2/V 이상의 이동도를 보이는 우수한 특성으로 인해 AMOLED 디스플레이에 적합하며 여러 기업에서 LTPS 공정을 이용한 TFT제작을 연구 중이다. LTPS 공정은 현재 ELA (Excimer Laser Annealing) 방식으로 대면적 유리기판에 ELA 방법을 적용함에 있어 설비투자 비용이 지나치게 높아진다는 단점을 가지고 있다. 설비투자 비용의 문제점을 해결하기 위해 Diode Laser을 이용하여 Annealing하는 방법에 대해 연구하였다. 본 연구는 Diode Laser Annealing 방식을 이용하여 poly-Si을 구현하였다. 단결정 실리콘을 제작하기 위해 ICP-CVD장비를 이용하여 150$^{\circ}C$에서 SiH4, He2 혼합, He/SiH4의 flow rate는 20/2[sccm], RF power는 400 W에서 700 W으로 가변, 증착 압력은 25mTorr으로 하였다. 940 nm 파장의 30 W Diode Laser를 8 mm Spot Size로 a-Si에 순간 조사하여 결정화, 그 결과 grain을 형성한 polycrystalline 구조를 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.3
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• pp.1-8
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• 1998

In this paper, the optical pick-up used for general audio/video players having more market share than the others is designed with 4-wire suspension type actuator and the hologram laser diode which laser diode, photo diode, beam splitter, and grating lens are integrated in. This optical pick-up is designed in very simple optical system with the characteristics of hologram laser diode. Thus, it has high productivity, the number of the parts is reduced, and also the shape of the assembling parts becomes simple.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.11
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• pp.640-645
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• 1999

This paper proposes a new series-connected diode rectifier which draws sinusoidal input currents. The proposed rectifier system is configured by adding an auxiliary circuit to the conventional 12-pulse series-connected diode rectifier and employing a current injection technique. A low kVA($0.02P_{\circ}$(PU) ) active current source injects a triangular current into the interphase reactor of the diode rectifier. The current injection results in near sinusoidal input current from the utility with less than 1% THD. The resulting system is suitable for high voltage and high power applications. Experimental and simulation results are provided from a 220V, 3kVA prototype rectifier system.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.362-371
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• 2018

This work proposes FPGA implementation of Carrier Disposition PWM for closed loop seven level diode clamped multilevel inverter in speed control of induction motor. VLSI architecture for carrier Disposition have been introduced through which PWM signals are fed to the neutral point seven level diode clamped multilevel using which the speed of the induction motor is controlled. This proposed VLSI architecture makes the power circuit to work better with reduced stresses across the switches and a very low voltage and current total harmonic distortion (THD). The output voltages, currents, torque & speed characteristics for seven level neutral point diode clamped multilevel inverter for AC drive was studied. It has observed the proposed scheme introduces less distortion and harmonics. The results were validated using real time results.

• Journal of the Korea Institute of Military Science and Technology
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• v.8 no.3 s.22
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• pp.64-72
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• 2005

In this paper, we propose a design method of the millimeter-wave(W-Band) waveguide cavity harmonic voltage controlled oscillator(VCO) using a Gunn diode for the armor sensor. Using the 3-dimensional simulation tool(Ansoft $HFSS^{TM}$), we were able to find the impedance matching point between waveguide and Gunn diode and estimate the oscillation frequency. A varactor diode is used for the frequency tuning, and we find out the equation for the calculation of the tunable frequency range. The designed VCO shows good performances; 17dBm output power at 94GHz center frequency, 520MHz frequency tuning range similar to the estimated value(480MHz).

• Journal of radiological science and technology
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• v.44 no.2
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• pp.141-146
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• 2021

This study aimed to explore whether photodynamic therapy using Radachlorin and diode laser is an effective inhibitor of Candida albicans. Suspensions of Candida albicans were obtained, inoculated in petri dishes with Radachlorin, and incubated for 30 min. Then, the laser light of a diode laser was irradiated at at energy densities of 3 J/cm², 5 J/cm², 7 J/cm². As a result, Candida albicans showed a killing rate of 91.5% at an energy density of 7 J/cm². This study found that photodynamic therapy using a Radachlorin and diode laser was effective for the inhibition of Candida albicans.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.50-57
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• 1986

The fabricatoin sequence of GaAs MIS type diode and its electrical characteristics are presented. Used wafers were undoped GaAS wafer adn Te-doped GaAs wafer. Au and AuGe/Ni was used as schottky contact metal and ohmic contact metal respectively. Oxide layer on GaAs surface was formed by water vapor saturated oxide growth technique and dry oxidation technique. In Te-doped GaAs wafer, cutin voltage of MIS type diode was enhanced about 3V comparing with non-oxide layer diode. From light I-V characteristics fill factor of MIS type Te-doped GaAs diode was about 64%, Voc(open circuit voltage) was 0.67V.