• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.497-499
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• 2005

A portable terminal assistant market grows rapidly every year and it requires many change in research on display devices. Among many newly developing methods, OLED(Organic Light Emitting Diode) is considered an advanced flat display device because its excellent characteristics, including high speed response, full color performance, low power consumption and flux of panel. However changes in the market of display shows that the market will require 3-dimensional images, but it is hard for existing 2-dimensional displays to make 3-dimensional images. Therefore we will try to find various methods such as holograms. In this paper, we will show existing flat displays can make 3-dimensional images by applying Lenticular Screen printing techniques on the organic semiconductor display device.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.423-426
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• 2005

A new chip on glass(COG) technique by making use of a high power diode laser for LCD driver IC packaging of LCD has been developed. A laser joining technology of the connection of IC chip to glass panel has several advantages over conventional method such as hot plate joining: shorter process time, high reliability of joining, and better fur fine pitch joining. The reach time to cure temperature of ACF in laser joining is within 1 second. In this study, results show that the total process time of joining is reduced by halves than that of conventional method. The adhesion strength is mainly 100-250 N/cm. It is confirmed that the COG technology using high power diode laser joining can be applied to advanced LCDs with a fine pitch.

• Proceedings of the Korea Information Processing Society Conference
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• 2000.04a
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• pp.846-851
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• 2000

4-state 바코드의 정보는 우편번호, 배달순서코드, 고객 정보 등을 수록되며, 판독율 향상을 위한 오류정정 코드워드를 적용할 수 있다. 이 4-state 바코드는 우편물 자동구분처리의 효율화 및 우편물류의 정보표현, 전달, 처리를 효율적으로 지원되도록 개발하고 있다. 본 논문은 우편물 접수 및 처리과정에서 필요로 하는 4-state 고객 바코드 인쇄규격 검증 및 판독시스템 개발에 관한 것으로 4개의 높이로 구성된 바들의 특성과 바의 두께 및 공간 값이 균일한 간격으로 바가 인쇄되는 특징을 고려하여 Laser Diode 배열방법을 적용하였다. 또한, 우편물을 자동으로 이송시키고, 일정한 영역에 배열한 Laser Diode에 의하여 바의 두께, 공간, 높이 값을 정확하게 판독될 수 있도록 한 것이다.

• Journal of Power Electronics
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• v.19 no.6
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• pp.1591-1600
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• 2019

In this paper, a practical SPICE model for an IGBT and a PiN diode is proposed based on the Finite Differential Method (FDM). Other than the conventional Fourier model and the Hefner model, the excess carrier distribution can be accurately solved by a fast FDM in the SPICE simulation tool. In order to improve the accuracy of the SPICE model, the Taguchi method is adopted to calibrate the extracted parameters. This paper presents a numerical modelling approach of an IGBT and a PIN diode, which are also verified by SPICE simulations and experiments.

• International Journal of Air-Conditioning and Refrigeration
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• v.9 no.4
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• pp.10-16
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• 2001

An experimental study for free convective heat transfer in a thermal diode type enclosure is presented. The thermal diode is a device which allows heat to be transferred in one direction by convection due to density difference of the fluid, and consists of a rectangular-paralle-logrammic enclosure with a guide vane. It is used as heat collection system of solar energy due to its simple construction and low cost. Experimental parameters were guide vane thickness, the inclination angles of the parallelogrammic enclosure, and the lengths of the rectangular enclosure part. The parameter range of the flux Rayleigh numbers was $2.4\times{10}^8$~$9.8\times{10}^8$. The heat transfer rate of this system was shown 10~47% higher than that of other earlier research results without the guide vane. The correlation for fixed $\phi=60^\circ$ was obtained, Nu=0.0037(Ra^*)^{0.429}(d^*)^ {0.050}(Lr/H)^{0.0415}$.

• Journal of the Optical Society of Korea
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• v.14 no.1
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• pp.38-41
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• 2010

We design and fabricate a widely tunable laser diode made of InGaAsP-InP. The diode is monolithically integrated with a wavelength-selective coupled-ring reflector and semiconductor amplifiers. For realization of a compact size device, deeply etched multi-mode interference couplers and square ring resonators composed of total-internal-reflection mirrors are adopted and fabricated using a self-aligned process. It is demonstrated that the laser diode exhibits single mode operation and 16 nm tuning range with side-mode-suppression-ratio exceeding 20 dB.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• Proceedings of the Korean Magnestics Society Conference
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• 1994.10a
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• pp.80-81
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• 1994

• Proceedings of the KIEE Conference
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• 1984.07a
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• pp.199-201
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• 1984

• Proceedings of the Korean Magnestics Society Conference
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• 1996.05a
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• pp.84-85
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• 1996