• 제목/요약/키워드: Diode

검색결과 4,469건 처리시간 0.033초

Digital Control of a Power Factor Correction Boost Rectifier Using Diode Current Sensing Technique

  • Shin, Jong-Won;Hyeon, Byeong-Cheol;Cho, Bo-Hyung
    • Journal of Power Electronics
    • /
    • 제9권6호
    • /
    • pp.903-910
    • /
    • 2009
  • In this paper, a digital average current mode control using diode current sensing technique is proposed. Although the conventional inductor current sensing technique is widely used, the sensed signal of the current is negative. As a result, it requires an additional circuit to be applied to general digital controller ICs. The proposed diode current sensing method not only minimizes the peripheral circuit around the digital IC but also consumes less power to sense current information than the inductor current sensing method. The feasibility of the proposed technique is verified by experiments using a 500W power factor correction (PFC) boost rectifier.

RF전력증폭기에 직렬다이오드선형화기를 이용한 전치보상기 구현 (A implementation of predistorter using the Series Diode Linearizer for RF Amplifiers)

  • 원용규;윤만수;이상철;정찬수
    • 전기학회논문지P
    • /
    • 제52권1호
    • /
    • pp.28-34
    • /
    • 2003
  • In this paper, a predistortion linearizer using series diode is proposed for linearizing the power amplifier in microwave radio systems. The power amplifier should be operated near saturation region to achieve high efficiency. But at this region, amplitude and phase distortions of the amplifier remarkably increase with the increase of input power and cause a significant adjacent channel interference. The linearizer is composed of a series diode with a parallel capacitor, which provides positive amplitude and negative phase deviations with the increasing input power. This type of linearizer using the nonlinearity of diode has improved the C/I(Carrier to Intermodulation Distortion) ratio well. By applying this linearizer to two-tone 880MHz power amplifier, adjacent channel leakage power is improved up to 5dBm.

Titanium Dioxide Sol-gel Schottky Diodes and Effect of Titanium Dioxide Nanoparticle

  • Maniruzzaman, Mohammad;Zhai, Lindong;Mun, Seongcheol;Kim, Jaehwan
    • Journal of Electrical Engineering and Technology
    • /
    • 제10권6호
    • /
    • pp.2343-2347
    • /
    • 2015
  • This paper reports the effect of Titanium dioxide (TiO2) nanoparticles on a TiO2 sol-gel Schottky diode. TiO2 nanoparticles were blended with TiO2 sol-gel to fabricate the Schottky diode. TiO2 nanoparticles showed strong anatase and rutile X-ray diffraction peaks. However, the mixture of TiO2 sol-gel and TiO2 nanoparticles exhibited no anatase and rutile peaks. The forward current of the Schottky diode drastically increased as the concentration of TiO2 nanoparticles increased up to 10 wt. % and decreased after that. The possible conduction mechanism is more likely space charge limited conduction.

Implementation of Tuneable Filter Using CPW Coupled Line and Varactor Diode

  • Park, Jeong-Heum
    • 조명전기설비학회논문지
    • /
    • 제20권9호
    • /
    • pp.40-44
    • /
    • 2006
  • This study investigated a new tuneable bandpass filter based on coplanar waveguide coupled line structure, and using the varactor diode for tuning the center frequency of the filter. The filter was designed by a commercial simulator and had a tuning range of 180[MHz] from 0.95[GHz] to 1.13[GHz]. The filter acceptable values regarding the insertion loss was less than 3[dB] and its return loss greater than 12[dB]. The figure of merit of the implemented tuneable filter increased with the reverse bias voltage up to 14[V] on the varactor diode. The proposed filter has a promising future as it can be used in integration processes and in various materials as substrate.

Silicon P-N Junction Diode에 대한 X-Ray 및 Gamma-Ray 의 Dose Ratec 측정 (Measurements of X-Ray and Gamma Ray Dosse Rate by the Silicon P-N Junction Diode)

  • 정만영;김덕진
    • 전기의세계
    • /
    • 제13권3호
    • /
    • pp.13-20
    • /
    • 1964
  • The measurements of X-ray and Gamma-ray Dose Rate have been successfully made by measuring the short circuit current of the Silicon P-N Junction Diode being irradiated. The short circuit current flows when a silicon P-N Junction Diode is irradiated by X-ray of Gammaray radiations due to photovoltaic effect. A brief analysis is given in order to verify the proportionality of a short circuit current to the Dose Rate. Using this method, measurements of X-ray Dose Rate were carried out in the range of 0.05-1600 r/m successfully. The calibration was made by comparing with Victoreen condenser r-meter. Some advantages in this Dose Rate meter over a condenser r-meter were found. One can measure a continous variation of X-ray Dose Rate with this rate meter at the control console of X-ray device.

  • PDF

고출력 laser diode를 위한 AR, HR coating simulation에 관한 연구 (A study on AR, HR coating simulations for the high power laser diode)

  • 류정선;윤영섭
    • E2M - 전기 전자와 첨단 소재
    • /
    • 제9권5호
    • /
    • pp.498-505
    • /
    • 1996
  • In the present work, we have developed the simulator to optimize the process conditions of the AR(antireflection) and HR(high-reflection) coatings for the high power laser diode. The simulator can run on the PC. After making the simple optical model, we establish the Maxwell equations for the model by the operator conversion. By using the Mathematica, we derive a matrix for the multilayer system by applying the equations to the model and optimize the AR and HR coating process conditions by obtaining the reflection rate from the matrix. We also prove the validity of the simulator by comparing the simulation with the characteristics of the laser diode which is AR and HR coated according to the optimized conditions.

  • PDF

Pd-SiC 쇼트키 다이오드를 이용한 $CH_4$ 가스센서 ($CH_4$ Gas Sensor Utilizing Pd-SiC Schottky Diode)

  • 김창교;이주헌;이영환
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
    • /
    • pp.163-166
    • /
    • 1998
  • The mechanism of methane sensing by Pd-SiC diode was investigated over the temperature range of 400~$600^{\circ}C$. The effects or methane gas reaction on the parameters such as barrier height, initial rate of methane gas reaction are investigated. The methane gas reaction kinetics on the device are also discussed. The physical and chemical mechanism responsible for methane detection are proposed. Analysis of steady-state reaction kinetics using I-V method confirmed that methane gas reaction processes are responsible for the barrier height change in the diode.

  • PDF

Chua다이오드의 비선형제어 (Nonlinear Control of Chua's Diode)

  • 임소영;이호진;이정국;김성열;이금원;이준모
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2006년 학술대회 논문집 정보 및 제어부문
    • /
    • pp.285-287
    • /
    • 2006
  • The paper treats the nonlinear robust control of Chua's circuit having Chuar's diode as an element based on the internal model principle. The Chua's diode has unknown nonlinear parameters and the circuits parameters are alos assumend unknown. Nonlinear regulator equations are established to obtain 3-fold equilibrium equations on which the output error is zero. Also an internal model of the 3-fold exosystem is constructed for obtaining the control law. Pole Placement method is used for obtaining the feeback control law. Simulation results are presented for tracking the sinusoidal and constant reference input signal. Asymptotic trajectory control and the suppression of chaotic motion in spite of uncertainties in the system are accomplished.

  • PDF

Pd-SiC 쇼트키 다이오드의 수소 가스 감지 특성 (A Study on a Palladium-Silicon Garbide Schottky Diode as a Hydrogen Gas Sensor)

  • 이주헌;이영환;김창교;조남인
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
    • /
    • pp.858-860
    • /
    • 1998
  • A Pd-SiC Schottky diode for detection of hydrogen gas operating at high temperature was fabricated. Hydrogen-sensing behaviors of Pd-SiC Schottky diode have been analyzed as a function of hydrogen concentration and temperature by I-V and ${\Delta}I$-t methods under steady-state and transient conditions. The effect of hydrogen adsorption on the barrier height was investigated. Analysis of the steady-state kinetics using I-V method confirmed that the atomistic hydrogen adsorption process is responsible for the barrier height change in the diode.

  • PDF

Enhancement of outcoupling efficiency of OLEDs by using nanoimprinted polymer nanostructures

  • Jeon, So-Hee;Kang, Jae-Wook;Park, Hyung-Dol;Shim, Jong-Youp;Jeong, Jun-Ho;Kim, Se-Heon;Youn, Jae-R.;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.521-522
    • /
    • 2008
  • An etch-less simple method was developed to fabricate two-dimensional nanostructures on glass substrate directly by using UV curable polymer resin and UV nanoimprint lithography in order to improve output coupling efficiency of OLEDs. OLEDs integrated on nanoimprinted substrates enhanced electro-luminance intensity by up to 50% compared with the conventional device.

  • PDF