• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.281-284
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• 2007

The effect of Ca addition on the microstructure evolution and deformation behavior of AZ31 magnesium alloy produced by hot extrusion was investigated. For this purpose, Ca was added into AZ31 melts to the level of 0.7 and 2.0 wt.% Ca. Then, AZ31 base alloy and Ca modified AZ31 alloys were extruded at $383^{\circ}C$. Ca added alloys showed finer grain size and increased hardness value rather than AZ31 base alloy. After isothermal hot compression, the shape of tested specimen exhibited a noticeable anisotropy due to the crystallographic texture effect. The ratio of major and minor axes of ovality was not directly related to test condition and Ca amount. Flow stress level increases with the increase of Ca addition at temperature below $300^{\circ}C$ because of fine microstructure. However, at high temperature and low strain rate region ($400^{\circ}C$ and $10^{-3}s^{-1}$), reverse tendency was observed since main deformation mechanism changes from dislocation slip to grain boundary sliding or diffusional process at high temperature.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.828-836
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• 1994

In order to investigate the high temperature deformation characteristics in YBaiCu307-, oxide superconductor, the compression test was performed at temperatures from $890^{\circ}C$ to $930^{\circ}C$ at initial strain rate between $1.0 x 10^{-5}s^{-1}\; and \; 1.0^{-4}s^{-1}$. As the temperature increased and the initial strain rate decreased, the flow stress decreased. The strain rate sensitivity exponent measured as 0.41-0.46, supporting occurence of a superplastic deformation. The activation energy for superplastic deformation was calculated as 500-580KJ/mol, which decreased with increasing Ag content. Microstructure of the superplastically-deformed specimens showed that a grain growth occurred during deformation, and it appeared to be considerable when Ag content increased, but most grains still remained equiaxed after deformation. In this study, the deformation mechanism of YBCO superconductor was the grain boundary sliding with the diffusional accommodation and the contribution of the gram boundary sliding to the total strain was estimated to be 65%.

• Microbiology and Biotechnology Letters
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• v.9 no.3
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• pp.165-171
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• 1981

The penicillin amidase from Escherichia coli (ATCC 9637) was immobilized by entrappment in gelatin and DEAE-cellulose mixture cross-linked with glutaraldehyde, and the kinetics in a differential column reactor was studied. The optimal operating condition of a differential reactor was reasonably met when the enzyme loading was 1g, and 30 mM substrate solution in 0.1 M phosphate buffer (pH 8.0) was fed at flow rate 4$m\ell$/min and 4$0^{\circ}C$. The optimal pH and temperature were found to be 8.0 and 55$^{\circ}C$, respectively. The Michaelis-Menten constant was 4.8 mM while the maximum velocity was 308 units/g of the immobilized enzyme under the condition of the differential reactor. The effect of substrate inhibition disappeared in the immobilized enzyme preparation. The differential reactor was proved to be good for studying the true kinetics since the pH drop and the external diffusional resistance could be eliminated.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.12-18
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• 1993

Abstract The effect of the film stress on the thermal stability of TiSi, films under the dielectric overcoat was investigated. TiS$i_2$ films with the sheet resistance of 1.2 ohm/sq. were produced by a solid-state reaction between sputtered Ti film and single-crystalline Si in an RTA (rapid thermal anneal) machine. Dielectric overcoats such as the USG (Undoped Silicate Glass, Si$O_2$) film and the PE-SiN(S$i_3$$N_4$) film were deposited by AP-CVD and PE-CVD, respectively, on the TiS$i_2$ film. The thermal stability of the TiSi, film was evaluated by changes in the sheet resistance, film stress and microstructure after furnace anneals at 90$0^{\circ}C$. Agglomeration of the TiSi2 film high temperatures results in the increase of sheet resistance and the decrease of tensile stress of TiSi, film. The stress level of the TiSi" PE-SiN and ~SG films at 90$0^{\circ}C$C was 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$ in tensile, respectively. Dielectric films deposited by CVD on TiSi, was effective on preventing agglomeration of TiSi,. The PE-SiN film mproved the thermal stability of TiSi, more effectively than the AP-CVD USG film. It is considered that agglomeration of the TiS$i_2$ film under the stress of dielectric overcoat at high temperature can be caused by a diffusional flow of atom called Nabarro-Herring microcreep.reep.