• Title/Summary/Keyword: Diffraction efficiency Polarization Holography

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The properties of diffraction efficiency in polarization holography using the chalcogenide thin films by the electric field effects. (칼코게나이드 박막에서 전계효과에 의한 편광 홀로그래피 회절효율 특성)

  • 장선주;여철호;박정일;정홍배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.9
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    • pp.791-795
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    • 2000
  • Amorphous chalcogenide glasses have a wide variety of light-induced effects. In this study, we have investigated the diffraction efficiency of chalcogenide. As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ thin films by the various applied electric fields. The holographic grating in these thin films has been formed using a linearly polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two method of applied electric field in the perpendicular and parallel to the direction of inducing beam. We obtained that properties of diffraction efficiency in the two methods of applied electric field. The result is shown that the diffraction efficiency of parallel electric field is 285% increase, η=1.1$\times$10$^{-3}$ and the diffraction efficiency of perpendicular electric field is 80% decrease, η=9.83$\times$10$^{-5}$ . Also, we have investigated the anisotropy property on chalcogenide thin films by the electric field effects.

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Chalcogenide 박막의 Ag층 두께 의존적 holographic 특성

  • Nam, Gi-Hyeon;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.107-107
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    • 2010
  • In this study, we have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Ag/AsGeSeS thin films with the incident laser beam wavelength for the improvement of the polarization diffraction grating efficiency. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity. The result is shown that the diffraction efficiency of Ag/AsGeSeS double layer thin film for the Ag thickness, the maximum grating diffraction efficiency using 60nm Ag layer is 0.96%.

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Characteristics of the Polarization Dependence Holographic Diffraction Efficiency using the $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ Multi-Layer ($MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ 다층박막에서 편광상태에 따른 회절효율 특성)

  • Lee, Jung-Tae;Yeo, Cheol-Ho;Shin, Kyung;Lee, Ki-Nam;Kim, Jong-Bin;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.04a
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    • pp.127-130
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    • 2003
  • We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver, $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ muliti-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under different polarization state(intensity, phase polarization holography). The diffraction efficiency was obtained by first order intensity. The maximum diffraction efficiency of $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver was 0.8% and The maximum diffraction efficiency of $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer(multi-layer I, multi-layer II) were 1.4% and 3.1%.

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Ag 두께의 변화에 따른 chalcogenide layer의 회절효율 특성

  • Nam, Gi-Hyeon;Jeong, Hong-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.197-197
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    • 2009
  • We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

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비정질 As2Se3 박막의 Ag 의존적 홀로그래픽 격자 형성 특성 분석

  • Nam, Gi-Hyeon;Kim, Jang-Han;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.275-276
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    • 2011
  • We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide As2Se3 thin films with Ag layer. The basic optical parameter which is a refractive index and extinction coefficent was taken by n&k analyzer. The source of laser was selected based on these parameter. Holographic gratings have been formed using He-Ne laser (wavelength: 632.8 nm) Diode Pumped Solid State laser (DPSS, wavelength: 532.0 nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

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A Study of Diffraction Efficiency Depended on $Ag^+$ of Amorphous Chalcogenide Thin Films (Amorphous chalcogenide 박막의 $Ag^+$ 의존적 회절효율 특성에 관한 연 구)

  • Jeong, Won-Kook;Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.134-134
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    • 2010
  • We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.

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The dependence of the electric field effect of diffraction efficiency using polarization beam on calcogenide thin films (칼코게나이드 박막에서 편광 빔 회절 효율의 전계 효과 의존성)

  • Jang, Sun-Joo;Yeo, Cheol-Ho;Park, Jeong-Il;Lee, Hyun-Yong;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1861-1863
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    • 1999
  • The polarization gratings were fabricated in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film applicable to a medium of the polarization holography and their diffraction efficiencies$(\eta)$ were monitored by real-time measurement. The polarization gratings prepared consisted of the multi-layer thin film system. As a method to improve the $\eta$, we have investigated its change for the field effect. As the results, the value of $\eta$ strongly depended on the voltage applied to the film and the maximum value, $\eta_{max}$ was enhanced to be about 4 times in comparison with that of not biased sample. In addition, an increase in the $\eta$ can be estimated to be due to additional creation of new defects caused by the electric field across the film.

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Design and analysis of two-dimensional binary phase masks for the fabrication of two-and three-dimensional periodic structures (2차원 및 3차원의 주기적인 구조 제작을 위한 2차원 이진 위상마스크의 설계와 분석)

  • 김남식;원영희;고근하;조두진
    • Korean Journal of Optics and Photonics
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    • v.12 no.1
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    • pp.17-24
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    • 2001
  • Two-dimensional binary-phase diffraction gratings which can be employed to fabricate two- and three-dimensional periodic structures are designed and analyzed using rigorous coupled-wave analysis. These gratings serve as phase-masks which generate several diffracted waves from a normally incident beam and thus can produce a periodic interference pattern in space via nearfield holography. The properties of the diffracted beams can be controlled by varying the polarization and wavelength of the incident beam, surface-profile, groove depth and duty cycle of the mask. For the two-dimensional structure, optimum results can be obtained when the diffraction efficiency of the zero-order beam is minimized while that of the first-order maximized. On the other hand, when the diffraction efficiency of the zero-order is appreciable or even greater than other orders, we can obtain a variety of three-dimensional interference patterns which may be used to fabricate photonic crystals of tetragonal-body-centered and hexagonal structures in a submicron scale. scale.

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