• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.143-150
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• 1997

In this study, doffusion barrier properties of 1000 $\AA$ thick molybdenum compound(Mo, Mo-N, $MoSi_2$, Mo-Si-N) films were investigated using sheet resistance measurement, X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), Scanning electron mircoscopy(SEM), and Rutherford back-scattering spectrometry(RBS). Each barrier material was deposited by the dc magnetron sputtering and annealed at 300-$800^{\circ}C$ for 30 min in vacuum. Mo and MoSi2 barrier were faied at low temperatures due to Cu diffusion through grain boundaries and defects in Mo thin film and the reaction of Cu with Si within $MoSi_2$, respectively. A failure temperature could be raised to $650^{\circ}C$-30 min in the Mo barrier system and to $700^{\circ}C$-30 min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the $N_2$, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It is found that Mo-Si-N is the more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetraion preventing Cu reaction with the substrate for $30^{\circ}C$min at a temperature higher than $650^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.328-336
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• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.335-340
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• 1998

Colossal magnetoresistance $La_{0.67}Ca_{0.33}Mn_{0.99}^{57}Fe_{0.01}O_3$ material has been produced by a metal-salt routed sol-gel process method. Magnetic properties of $La_{0.67}Ca_{0.33}Mn_{0.99}^{57}Fe_{0.01}O_3$ have been studied with x-ray diffraction, Rutherford back-scattering spectroscopy(RBS), vibrating sample magnetometer, and Mossbauer spectroscopy. Crystalline $La_{0.67}Ca_{0.33}Mn_{0.99}^{57}Fe_{0.01}O_3$ was perovskite cubic structure with a lattice parameter $a_0=3.868$\AA$$. And there was no appreciable change in the value of the lattice parameter when a small amount (x=0.01) of iron was added. However, Mossbauer and VSM data indicate the Curie temperature of the $La_{0.67}Ca_{0.33}Mn_{0.99}^{57}Fe_{0.01}O_3$ decreased from 282 to 270 k and also the saturation magnetization from 84 to 81 emu/g at 77 K. Mossbauer spectra of $La_{0.67}Ca_{0.33}Mn_{0.99}^{57}Fe_{0.01}O_3$ have been taken at various temperatures ranging form 4.2 K to room temperature. Analysis of $^{57}Fe$ Mossbauer data in terms of the local configurations of Mn atoms has permitted the influence of the magnetic hyperfine interactions to be monitored. The isomer shifts show that the charge state of all Fe ions are ferric. The magnetoresistance of $La_{0.67}Ca_{0.33}Mn_{0.99}^{57}Fe_{0.01}O_3$ was about 33 % at semiconductor-metal transition temperature $T_{SC-M}=250K$.

• Korean Journal of Optics and Photonics
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• v.31 no.5
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• pp.218-222
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• 2020

In this paper, we have experimentally demonstrated a 2-kW-class spectrally-beam-combined laser with high beam quality, using narrow-linewidth ytterbium-doped polarization-maintaining fiber amplifiers. Five fiber amplifiers with different center wavelengths were implemented for the spectrally-beam-combined laser. The center wavelengths of the five amplifiers were 1062, 1063, 1064, 1065, and 1066 nm, respectively. A phase-modulated laser diode was used as a seed source for each amplifier. The seed sources were modulated by filtered pseudorandom-bit-sequence (PRBS) signals 5 GHz in linewidth. The polarization-maintaining large-mode-area fiber with a core size of 30 ㎛ was used as a delivery fiber to mitigate the stimulated Brillouin scattering (SBS) effect. The laser beams from five amplifiers were spectrally combined by a multilayer dielectric diffraction grating. The maximum output power and beam quality M² of the combined laser were measured to be 2.3 kW and 1.74, respectively.