• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.992-993
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• 2002

We have fabricated the diffractive optical head(DOH) for optical pick up, which one adaptable to a optical recoding information storage. DOH consists of a focusing grating coupler(FGC) and a solid immersion Jens(SIL). FGC is device that the light converge into a focus by surface lattice. FGC have been studied as a potential application of pick up head for the information storage. In this study, FGC was designed and fabricated to make focus near to possible diffraction limit. We also fabricated recording head combined with SIL. The focus was measured in the range of $1.1{\mu}m$ as near to possible diffraction limit in the FGC having a focusing length of $600{\mu}m$ and a lattice area of 500 * $500{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.781-785
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• 2000

Chalcogenide glasses are suggested as a candidate for optical recording. In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ thin films. We have used a He-Ne laser light(633nm) to probe and record of the grating. Also the polarization state of object beam was modulated with a λ/4 wave plate. The polarization state of the +1st order diffracted beam was generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The result is shown that the diffraction efficiency of circularly polarized recording represents higher than other polarization state.ate.e.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.762-765
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• 2014

We fabricated a periodically poled lithium niobate (PPLN) by direct laser-writing of a quasi-phase-matching (QPM) structure in photolithographic process. Because we do not need to prepare a photomask by electron-beam writing, the "maskless" process shortens the fabrication time and significantly reduces the cost. We evaluated the poling quality of the direct laser-written PPLN by measuring the diffraction noise from the surface relief pattern of the fabricated QPM grating and comparing the results to those from a conventional PPLN made with a photomask. The quality of the PPLN fabricated by direct laser-writing was shown to be equivalent to that fabricated by the conventional method.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.36-46
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• 1993

The formula of the diffraction patterns which were made by the grating with the variable periods were derived. The diffraction patterns which had the various data value of the variable periods were simulated by the IBM PC., and the characteristics of the patterns were discussed. The purposes of this study was to find the periods of the real grating and their degree of variation by using the results of the experiment.

• Journal of the Optical Society of Korea
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• v.6 no.4
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• pp.141-164
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• 2002

A 42 channel demultiplexer for dense wavelength division multiplexing(WDM) using photopoly-mer volumetric diffraction grating that has excellent optical properties and low cost capability, has been designed and optically demonstrated. From the experimental results, we have obtained the 3 dB bandwidth of 0.18 nm, crosstalk suppression of 20 dB and channel uniformity of 1.6 dB for 50 GHB channel spacing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.39-42
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• 2000

Cutrent technological development toward miniaturization requires smaller components. These components usually generate complex multi-DOF motions other than simple 1-DOF motlon. Therefore it is essential to develop measurement methodology for 6-DOF motions. In this paper, a new 6-DOF measurement system for milli-struchlre is presented. This methodology basically employs the Optical Beam Deflection Method (OBDM) with a diffraction grating. A laser beam is emitted toward the difliaction grating which could be attached on the surface of a milli-structue and the incident ray is dif'||'&'||'acted in several directions. Among these difliacted beams, $0^{th}$ and $\pm$ $1^{th}4" order difkicted rays are detected by 4 Quadrant Photodiodes. From coordinate values fram each detector, we can get information for 6-DOF motions with lineariration method, Required resolutions for milli-struchue measurement are suh-micrometer in translation and arcsec in rotation. Experimental results indicate that proposed system has possibility to satisfy this requirement.

• Journal of Sensor Science and Technology
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• v.26 no.1
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• pp.28-34
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• 2017

An NIR grism Si optical area sensor spectrometer with in-band reference wavelength is designed and fabricated. It is composed of a transmission type diffraction grating (spatial density 300 line/mm), a rectangular N-BK7 prism (apex angle 30 degree), NIR filter(cutoff wavelength 720 nm), an imaging convex lens(focal length 50 mm F1.8) and an IR modified DSLR camera (Canon EOS40D) of Si optical area sensor ($3,888{\times}2,592$ pixels, pixel size $5.710{\mu}m$). "In-band reference wavelength function" is implemented using non-dispersive 0th diffraction order optical beam. The NIR grism spectrometer is tested in a laboratory using a halogen lamp and a Neon lamp. And the spectrometer is used in an astronomy field for obtaining the planet Jupiter NIR spectrum. In-band reference wavelength i.e. un-deviation wavelength is 846 nm, an wavelength resolution is 0.3027 nm/pixel, an wavelength resolving power is 2,794 and an wavelength range is 650~1,000 nm.

• Journal of Information Display
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• v.2 no.3
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• pp.6-12
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• 2001

Formation of intensity gratings was studied with two s-polarized (s+s) configuration in polymer liquid crystals (PLCs) containing a photochromic moiety (azobenzene) and a mesogenic unit (tolane, T-AB; cyanobiphenyl, CB-AB) by photoinduced alignment of PLCs. Remarkable differences were observed between the two PLCs. T-AB showed a faster response to the change in the diffraction intensity than CB-AB. In T-AB, alignment change took place faster than that of CB-AB. By introducing the tolane unit at the side chain, we obtained a diffraction efficiency of 30 % in the Raman-Nath regime

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.161-166
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• 1997

A improved method to measure the wavefront aberration of aspheric lens is described. In this study, which is a kind of lateral shearing interferometry, a sinusoidal diffraction grating is used for better quality of interferogram. Also,the grating is inclined to horizontal axis for obtaining the two orthogonal derivatives and minimizing moving error simultaneously. Measurement result shows that the repeatability is about 6 times better then that of previouse Ronchi Test.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.