• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.6
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• pp.1807-1818
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• 1991

The frictional characteristic of Zn-Ni electrogalvanized steel sheet was investigated by experimental procedures. To clarify the effect of surface property on the frictional characteristic of Zn-Ni coated steel sheet, Micro-hardness test, SEM analysis and X-ray diffraction analysis were carried out. Coefficients of friction for various stamping lubricant and Ni content in coated layer were measured by a draw bead friction test. The results show that frictional characteristic is very sensitive to Ni content of coated layer and depends on stamping lubricant. For Ni content less than about 11%, selection of proper lubricant is necessary to obtain low coefficient of friction in Zn-Ni coated steel sheet such as in case of cold rolled steel sheet.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.8
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• pp.642-653
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• 2008

In this paper, we propose a 3-D finite element (FE) analysis model with combined physical behavior and kinematical impact factors for evaluation of residual stress in multi-impact shot peening. The FE model considers both physical behavior of material and characteristics of kinematical impact. The physical parameters include elastic-plastic FE modeling of shot ball, material damping coefficient, dynamic friction coefficient. The kinematical parameters include impact velocity and diameter of shot ball. Multi-impact FE model consists of 3-D symmetry-cell. We can describe a certain repeated area of peened specimen under equibiaxial residual stress by the cell. With the cell model, we investigate the FE peening coverage, dependency on the impact sequence, effect of repeated cycle. The proposed FE model provides converged and unique solution of surface stress, maximum compressive residual stress and deformation depth at four impact positions. Further, in contrast to the rigid and elastic shots, plastically deformable shot produces residual stresses closer to experimental solutions by X-ray diffraction. Consequently, it is confirmed that the FE model with peening factors and plastic shot is valid for multi-shot peening analyses.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.320-323
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• 2014

Ga-doped $LiFePO_4$ cathode materials were synthesized using a hydrothermal method. The microstructural characteristics and electrochemical performances were systematically investigated using field emission scanning electron microscopy, high-resolution X-ray diffraction, energy dispersive X-ray spectroscopy, charge-discharge cycling, cyclic voltammetry, and electrochemical impedance spectroscopy. Among the as-prepared samples, $LiFe_{0.96}Ga_{0.04}PO_4$ demonstrates the best electrochemical properties in terms of discharge capacity, electrochemical reversibility, and cycling performance with an initial discharge capacity of $125mAh\;g^{-1}$ and high lithium ion diffusion coefficient of $1.38{\times}10^{-14}cm^2s^{-1}$ (whereas for $LiFePO_4$, these were $113mAh\;g^{-1}$ and $8.09{\times}10^{-15}cm^2\;s^{-1}$, respectively). The improved electrochemical performance can be attributed to the facilitation of Li+ ion effective diffusion induced by $Ga^{3+}$ substitution.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.529-532
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• 2006

Sn-filled $Co_8Sb_{24}$ skutterudites were synthesized by the encapsulated induction melting process. Single ${\delta}-phase$ was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conductivity of the Sn-filled $Co_8Sb_{24}$. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled $Co_8Sb_{24}$ skutterudite is a highly degenerate semiconductor. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be $z{\leq}0.5$ in the $Sn_zCo_8Sb_{24}$ system.

• Korean Journal of Optics and Photonics
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• v.8 no.2
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• pp.122-127
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• 1997

The hexagonal wurtzite structure of CdSe quantum dots are investigated by X-ray diffraction experiment. The absorption peaks due to quantum confinement effect are observed in the linear absorption spectra. Absorption coefficient changes at the lowest transition are measured with pump wavelength at the lowest transition and at the next higher transition from which direct intraband transition is not allowed. The measured larger absorption changes at the lowest transition confirm that the selection rules of intraband transition resulting from quantum confinement effect are satisfied. From the experimental results, therefore, we concluded that the CdSe quantum dots can be described as homogeneous system.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1672-1678
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• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

• Journal of the Korean Ceramic Society
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• v.26 no.6
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• pp.811-819
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• 1989

There have been many studies on the biological phenomena of Bioglasses, which nay be used as implant materials in human body. However, not many works on the Bioglass compositions have been reported. In the present study, the effect of Al2O3 substitution for SiO2 in Bioglass of Na2O-CaO-P2O5-SiO2 system on its structure and properties was examined. Infrared and Raman spectroscopic studies for the glass structural analysis, differential thermal analysis and X-ray diffraction analysis for crystallization of the glass were perfomed. Several physical properties, such as thermal expansion coefficient, softening point, microhardness and reaction phenomena, were also measured. The major crystalline phase, after heat treatment of the glasses, was Na2Ca2(SiO2)3 and the crystal was transformed into other phase with increased substitution of Al2O3. The added Al2O3 reduced non-bridging oxygen in glass structure and thermal expansion coefficient, but increased glass density, sofening point and microhardness. When the glasses are reacted in Tris-buffer solution, the substituted Al2O3 inhibited the formation of hydroxyapatite on the Bioglas surface, and no hydroxyapatite was formed for the sample which contained more than 6wt.% of Al2O3 even if they were reacted for 600 hours.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.123-126
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• 2001

The $0.98MgTiO_3-0.02BaTiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and EDS. According to the X-ray diffraction patterns of the $0.98MgTiO_3-0.02BaTiO_3$ ceramics, the hexagonal $BaMg_6Ti_6O_{19}$ and ilmenite $MgTiO_3$ structures were coexisted. The dielectric constant$({\varepsilin}_r)$ and quality factor$(Q{\times}f_r)$ were decreased with increasing the sintering temperature in the range of $1275^{\circ}C{\sim}1350^{\circ}C$. In the case of the $0.98MgTiO_3-0.02BaTiO_3$ ceramics sintered at $1275^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.27, 76,845, $-46.6ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.716-719
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• 2007

The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel (PDP) were investigated and analyzed. MgO films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure were inspected using XRD (X-ray diffraction), AFM (atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary electron emission coefficient $({\gamma})$ was obtained at the evaporation rate of $5{\AA}/sec$. The XRD results and cathode-luminescence (CL) spectra show the ${\gamma}$ values are correlated with F/F+ centers of the molecular structure of MgO films. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5{\AA}/sec$. In the MgO film deposited at $5{\AA}/sec$, the (200) orientation and F+ center were most intensive.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1114-1115
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• 2006

The preparation of single-phase $CuLaO_2$ with delafossite-type structure by means of the solid-state reaction method was investigated using X-ray diffraction. The results showed that notwhistanding the fact that there was a trace of metallic copper, nearly single-phase $CuLaO_2$ was obtained by using $La(OH)_3$ as a lanthanum source and by firing the mixed powder with nonstoichiometric composition ratio of $La(OH)_3:Cu_2O=1:1.425$ in a vacuum at 1273 K for 10 h. The measurement of electrical conductivity and Seebeck coefficient showed that $CuLaO_2$ thus obtained was a p-type semiconductor and had a Seebeck coefficient of approximately $70{\mu}V/K$.