• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.176-176
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• 2009

Influences of dose and particle size of $Al_2O_3$ filler and sintering time on the dielectric properties of $Al_2O_3$ filler/CaO-$Al_2O_3-SiO_2$ (CAS) glass composites were investigated with a view to applying the composites to the substrate material in low temperature co-firing ceramic (LTCC) technology. The increased addition of $Al_2O_3$ filler with the particle size of 1 ${\mu}m$ monotonically decreased the density of the sintered specimen at a given temperature, while sintering of the 10 wt% $Al_2O_3$ added specimen at $925^{\circ}C$ for 2 h demonstrated 96.0 % of the relative density, dielectric constant of 6.34, and quality factor of 2,760 GHz. As for the influence of the particle size of the $Al_2O_3$ filler, there existed an optimum particle size (30 ${\mu}m$) to ensure successful densification (96.5 %) of the 10 wt% $Al_2O_3$/CAS composites at $925^{\circ}C$ for 2 h, at which condition the specimen demonstrated dielectric constant of 5.45 and quality factor of 3,740 GHz. When the influence of the sintering time of the 10 wt% $Al_2O_3$) (30 ${\mu}m$) added specimen was investigated at the sintering temperature of $925^{\circ}C$, an overly long sintering time degraded dielectric properties due to the over-sintering and the significant growth of the second phase such as anorthite, while the sintering for 4 h demonstrated 96.58 % of the relative density, dielectric constant of 5.4, and quality factor of 4,050 GHz. These results demonstrate the feasibility of the investigated material as the substrate material in LTCC technology.

• 전자공학회논문지D
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• 제35D권2호
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• pp.78-85
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• 1998

공진주파수의 온도계수(.tau./sub f/)가 큰 양(+)의 값을 가졌거나 혹은 음(-)의 값을 지녀 실제 활용되지 못하고 있는 마이크로파 유전체를 대역통과 필터에 응용하기 위한 대역통과 필터의 설계 방법이 제안되었고, 이 방법에 따라 제작된 대역통과 필터의 온도 안정성이 확인되었다. 이 방법에서 유전체 대역통과 필터를 구성하는 각각의 유전체 공진기는 서로 상반된 유전율의 온도계수(.tau./sub .epsilon./)를 지닌 유전체를 접합시켜 만든 SIR(Stepped Impedance Resonator) 구조로 되어있으며, 공진조건으로부터 접합 SIR의 공진주파수가 온도 변화에 안정하기 위한 길이 조건과 필터 설계에 필요한 susceptance slope parameter가 구해졌다. 설계하고자 하는 접합 SIR을 이용한 대역통과 필터는 중심주파수 915 MHz에서 통과대역폭 20 MHz를 갖도록 하였으며, 접합 SIR의 유전재료는 유전율의 온도계수(.tau./sub .epilon./)가 양(+)의 값을 갖는 MgTiO/sub 3/(.tau./sub .epilon./=+99 ppm/.deg. C)와 음(-)의 값을 갖는 Ba(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/(.tau./sub .epilon./=-77 ppm/.deg. C)을 이용하였다. 최종적으로 필터 설계식에 따라 설계된 접합 SIR 대역통과 필토의 온도 안정성이 시뮬레이션과 실제 제작을 통해 확인되었다.