• Title/Summary/Keyword: Dielectric resistance

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Dynamic Time Constant Based High-Performance Insulation Resistance Calculation Method (동적 시정수 기반 고성능 절연 저항 계산 기법)

  • Son, Gi-Beom;Hong, Jong-Phil
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.24 no.8
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    • pp.1058-1063
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    • 2020
  • This paper presents a new insulation resistance calculation technique to prevent electric shock and fire accidents due to the dielectric breakdown in the primary insulation section of the IT ground system. The solar power generation market is growing rapidly due to the recent expansion of renewable energy and energy storage systems, but as the insulation is destroyed and fire accidents frequently occur, a device for monitoring the insulation resistance state is indispensable to the IT grounding method. Compared to the conventional algorithm that use a method of multiplying a time constant to a fixed coefficient, the proposed insulation resistance calculation method has a fast response time and high accuracy over a wide insulation resistance range by applying a different coefficient according to the values of the insulation impedance. The proposed dynamic time constant based insulation resistance calculation technique reduces the response time by up to 39.29 seconds and improves the error rate by 20.11%, compared to the conventional method.

Electrical Properties of TiO$_2$added ZnO (SnO$_2$가 첨가된 ZnO의 전기적성질)

  • 최우성;박춘배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.221-223
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    • 1995
  • The electrical conductivity of SnO$_2$added ZnO was investigated using the DC and AC methods. The electrical conductivity of SnO$_2$added ZnO was decreased with increasing the concentration of SnO$_2$. The cal쳐lated effective dielectric constants of 3 mol%, 5 mo1%, and 7 mol% are ~7, ~13, and ~120, respectively. The factor of the decrease for the electrical conductivity seems to be the increase of the resistance of grain decreasing the size of grain.

Conduction Phenomena of the Polypropylene Film (폴리프로필렌 필름의 전도현상)

  • 이준욱;김용주;김봉협
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.34 no.9
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    • pp.349-354
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    • 1985
  • The conducting currents of polypropylene film was measured a function with electric fields at temperature of 25,35,45( C). It appears that there are four regions of conducting currents, depending upon the strength of the applied electric field` ohmic region based on ionic conduction, Poole-Frenkel region, Schottky region and negative resistance region. Several information of dielectric constant and potential barrier height were obtained.

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Effects of carbon blacks on the electrical properties of EPDM compounds (EPDM 컴파운드의 전기적 특성에 미치는 카본블랙의 영향)

  • Lee, Chul-Ho;Cho, Yong-Suk;Jeon, Young-Jun;Kim, Sang-Wook
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1593-1595
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    • 1999
  • Effects of carbon black species and concentration on the mechanical and electrical properties of alumina trihydrate filled EPDM compounds were investigated. Mechanical properties improved with increasing carbon black concentration, and these effects were prominent in carbon blacks haying large specific area. In the case of non-conductive carbon black. tracking resistance improved when a small amount of carbon black was added to EPDM. Conductive carbon black showed detrimental effect to dielectric losses, volume resistivity and tracking resistance of EPDM compound.

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Effect of Organic Solvents on the Electrical Properties of a Neat Epoxy Resin System

  • Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.2
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    • pp.89-92
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    • 2012
  • The effect of organic impurities on the electrical properties of a neat epoxy resin was studied. 0.05, 0.5 and 1.0 phr of iso-propyl alcohol (IPA) and methylene chloride (MC) mixture (50/50 wt%) were used as impurities. The current density, volume resistance and impedance characteristics of the epoxy/IPA/MC systems were measured with a high voltage source meter and broadband dielectric spectroscopy. Glass transition temperature (Tg) was measured by a differential scanning calorimetry (DSC) and it was found that Tg decreased slightly with increasing IPA/MC content. It was also found that Tg values of the epoxy systems with various IPA/MC contents were closely related to the current density, volume resistance and impedance characteristics.

Synthesis and Physical Property of Multi-Functional Siloxane Protective Coating Materials Applicable for Electronic Components

  • Kim, Cheol Hyun;Cho, Hyeon Mo;Lee, Myong Euy
    • Bulletin of the Korean Chemical Society
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    • v.35 no.6
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    • pp.1665-1669
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    • 2014
  • Four multialkoxy-functionalized siloxane base-polymers (BP-1~4) were synthesized through either hydrosilylation or condensation reactions in order to prepare multi-networked siloxane polymers having appropriate physical properties for protective coating in fabrications of electronics. Formulations of 4 base-polymers gave coating materials A and B. Product A showed well-controlled flowing and leveling properties, and product A-2 was successfully applied to protective insulating coating for junction areas of connectors and chips in PDP controller. Tack free time, extrusion rate, dielectric breakdown voltage, hardness, thermal stability, water resistance and flame resistance of products A and B were examined.

A Study on the Negative Resistance and Oscillation Phenomena of OPP Film (OPP 필름의 부성저항과 발진현상에 관한 연구)

  • Kim, Gwi-Yeol;Yun, Mun-Soo;Hong, Jin-Ung;Lee, Joon-Ung
    • Proceedings of the KIEE Conference
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    • 1989.07a
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    • pp.364-366
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    • 1989
  • In this paper, the electrical conduction phenomena of oriented polypropylene film were studied. Especially, as for the range of negative characteristics, it is observed that as increasing ambient temperature, the characteristics are shifted gradually towards the low intensity side of applied field with the decreasing width of the range as well as the fact that the currant oscillation takes place at the both transition points of the characteristics and that the point at the place the dielectric breakdown, occurs. Finally, it is also suggestive that the oscillation characteristics observed on the negative resistance range of the biaxially oriented specimen show the possibility to utilize it as active element materials.

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Dielectric Characteristic Analysis of Thermally Aged Insulating Oil for Transformers (열적열화된 변압기용 절연유의 유전특성 분석)

  • Jung, J.W.;Lee, B.S.;Song, I.K.;Park, J.S.;Kwak, H.R.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1594-1596
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    • 2001
  • The purpose of this paper is to provide the fundamental data which can be used for the design of pole transformers. For the purpose, electrical characteristics of aged mineral oil and silicone oil were analyzed by comparing with the results of virgin ones. For the experiment, an oil bath which can keep constant temperature was constructed to thermally deteriorate the specimens. And transformer materials were put together in the bath according to the their ratio in weight in the pole transformer. And the parameters such as relative permittivety, tan$\delta$ and specific resistance were measured. As a results, the permittivity of silicone oil was higher than that of mineral oil, and its decreasing rate with temperature was also higher. In addition, it was found that tan$\delta$ and specific resistance of virgin and aged oil began to differ at similar temperature.

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Analog CMOS Performance Degradation due to Edge Direct Tunneling (EDT) Current in sub-l00nm Technology

  • Navakanta Bhat;Thakur, Chandrabhan-Singh
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.3
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    • pp.139-144
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    • 2003
  • We report the results of extensive mixed mode simulations and theoretical analysis to quantify the contribution of the edge direct tunneling (EDT) current on the total gate leakage current of 80nm NMOSFET with SiO2 gate dielectric. It is shown that EDT has a profound impact on basic analog circuit building blocks such as sample-hold (S/H) circuit and the current mirror circuit. A transistor design methodology with zero gate-source/drain overlap is proposed to mitigate the EDT effect. This results in lower voltage droop in S/H application and better current matching in current mirror application. It is demonstrated that decreasing the overlap length also improves the basic analog circuit performance metrics of the transistor. The transistor with zero gate-source/drain overlap, results in better transconductance, input resistance, output resistance, intrinsic gain and unity gain transition frequency.

Thermal Performance of Cooling System for a Laptop Computer Using a Boiling Enhancement Microstructure (비등 촉진 마이크로 구조물을 이용한 휴대용 컴퓨터 냉각시스템의 열성능에 관한 연구)

  • Cho, N.H.;Jeong, W.Y.;Park, S.H.
    • Proceedings of the KSME Conference
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    • 2008.11b
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    • pp.2043-2052
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    • 2008
  • The increasing heat generation rates in CPU of notebook computers motivate a research on cooling technologies with low thermal resistance. This paper develops a closed-loop two-phase cooling system using a micropump to circulate a dielectric liquid(PF5060). The cooling system consists of an evaporator containing a boiling enhancement microstructure connected to a condenser with mini fans providing external forced convection. The cooling system is characterized by a parametric study which determines the effects of volume fill ratio of coolant, existence of a boiling enhancement microstructure and pump flow rates on thermal performance of the closed loop. Experimental data shows the optimal parametric values which can dissipate 33.9W with a film heater maintained at $95^{\circ}C$.

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