• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1041-1047
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• 1997

In this paper the dielectric properties of (0.8-x)Pb(Mb$_{1}$3//Nb/2/3)O$_3$/BaTiO$_3$-CaZrO$_3$(x=0.1, 0.15, 0.2, 0.25) ceramics were investigated. Specimens were prepared by the conventional mixed oxide method and sintering temperature and time were 1000~115$0^{\circ}C$ 2hr, respectively. The structural and dielectric properties with variation of sintering temperature and composition were investigated. All the specimens sintered at 115$0^{\circ}C$ for 2hr showed the highest value of 1043. With increasing the contents of CZ and frequency dielectric constant was decreased and which was decreased with increasing temperature from 3$0^{\circ}C$ to 15$0^{\circ}C$.

• 설비공학논문집
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• 제11권4호
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• pp.528-536
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• 1999

This work studies the effects of transient reflectance on the thermal responses of a metal(gold) thin-film during ultrashort laser heating. The heating process is calculated using the conventional conduction model (parabolic one-step: POS), parabolic two-step model (PTS) with and without variable properties, hyperbolic two-step model (HTS). Results from the HTS model are very similar to those from the PTS model, since the laser heating time in this study is greater than the electron relaxation time. PTS model with variable properties, however, results in totally different temperature profiles compared to those from POS models or calculation with constant properties. Transient reflectances are estimated from electron temperature distributions and based on the linear relationship between the electron temperature and complex dielectric constants. Reflectance of the front surface can be changed with respect to dielectric constants, while those of the rear surface remain unchanged.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.783-786
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• 2000

In this paper, physical properties and dielectric characteristics of LLDPE and EVA which are used as a blending material to improve PE's performance are studied. LLDPE of 0.92[g/cm3] and EVA with the EVA contents of 12.5[%1 were selected as specimens, and X-ray diffraction(XRD) are used to analysis physical properties. We measured dielectric constant with the frequency range from 20[Hz] to 1 [MHz], applied voltage 6[V] and the temperature from 25[$^{\circ}C$] to 110[$^{\circ}C$]. From XRD, LLDPE has a crystallinity of 53[%] and, 46[%] for EVA. LLDPE has as low tan$\delta$ as of 10$^{-3}$ ~10$^{-4}$ and inflection point near 500[Hz]. At frequency region lower than 500[Hz], tan$\delta$ decreases with frequency and increases with temperature and it is considered to be caused by conductive carriers within specimen. Over 500[Hz], it is the reverse and we thought that it was caused by decrease of relaxation time due to Debye theory, EVA has tan$\delta$with the values of 10$^{-2}$ ~10$^{-3}$ , which is higher than that of LLDPE, and it has inflection point at 60[Hz]. It is shown that Dielectric characteristics of EVA are similar to LLDPE's.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1162-1164
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• 1993

The Thermally Stimulated Current(TSC) spectroscopy has been applied to study the influence of the structual cahange and interface on the electrical properties of epoxy composites. Three DGEBA-MeTHPA matrix model samples mixed different ratios and silica($SiO_2$) filled sample and silaln treating-filled sample has been studied. Above room temperature, the relaxation mode $\alpha$ peak associated with Tg has been located at $110^{\circ}C$. Below glass transition temperature(Tg), three relaxation modes are observed in all samples: a $\beta$ mode situated at $10^{\circ}C$, a $\gamma$ mode located at $-40^{\circ}C$ and a $\delta$ mode appeared in $-120^{\circ}C$. The analysis of its fine structure indicates that constitution of elementary processes is characterized by the activation energy and relaxation time. Also the dielectric relaxation properties have been investigated to compare the the change of the molecular structure and motion to the relaxation properties and conduction mechanism in TSC spectra.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집
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• pp.27-32
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• 2004

Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A method for determining the dielectric relaxation time ${\tau}$ of floating 'monolayers on the water surface is presented. MDC floing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time ${\tau}$ of monolayers in the isotropic polar orientational phase is determined using a liner relationship between the monolayer compression speed a and the molecular area Am. Compression speed a was about 30,40,50mm/min. LB layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film.The physicochemical properties of the LB films were examined by UV absorption spectrum, SEM and AFM. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 3~9. Also, we then examined of the MIM device by means of I-V characteristic of the device is measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• 수산해양기술연구
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• 제26권1호
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• pp.8-13
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• 1990

LiF(Mg, Cu, P) 단결정의 미시적 이완매개변수와 유전손실 등을 구하기 위하여 TSD glow곡선을 측정하고, 측정된 glow곡선을 초기상승법, 가열율법 및 전면적법으로 해석하였다. 쌍극자의 이완시간 $\tau$, pre-exponential인자 $\tau$하(o) 및 활성화에너지E는 각각 12.19S, 1.97$\times$10 상(-12)S 및 0.55eV이었다. 또한 TSD glow곡선을 사용하여 온도영역 300k~340k 사이에서 구한 LiF(Mg, Cu, P)단 결정의 tan$\delta$값은 약 3$\times$10 상(-2)이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.75-79
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• 1993

The Thermally Stimulated Current(TSC) method has been allied to study the influence of the structural change and interface on the electrical properties of epoxy composites. Three DGBA- MeTHPA matrix model samples mixed different ratios arts silica(SiO$_2$) filled sample and silaln treating-filled sample have been studied. Above room temperature, the relaxation mode ${\alpha}$ peak associated with T$\_$g/ has been located at 110$^{\circ}C$. Below glass transition temperature(T$\_$g/), three relaxation modes are observed in all samples : a ${\beta}$ mode situated at 10$^{\circ}C$, a ${\gamma}$ mode located at -40$^{\circ}C$ and a $\delta$mode appeared in -120$^{\circ}C$, which may be due to segmental motion, side chains, substitution and terminal groups. The analysis of its fine structure indicates that constitution of elementary processes is characterized by the activation energy and relaxation time. Also the change of the molecular structure and their thermal motion are compared with the relaxation mode and conduction mechanism in TSC spectra through the dielectric properties and FTIR measurements.

• 한국세라믹학회지
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• 제36권12호
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• pp.1374-1380
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• 1999

The cause of Scond Harmonic Generation (SHG) in thermally poled silica glass is suggested basedon the electrical and dielectric relaxation measurements. The absorption currents as functions of time were measured for various types of silica glasses and analyzed by the theory of Space Charge Polarization. Space charge polarization occurs when an ionic conducting material is subjected to dc electric field with blocking electrode. Thermal poling performed to induce SHG in silica glass is basically identical to the process generating space charge polarization. Hence it was found that gene-ration removal reproduction and temperature dependence of SHG in poled silica is directly related to those of space charge polarization. It turned out that the fundamental parameters governing the SHG in poled silica are charge carrier concentration and mobility. Based on the theory of space charge polarization and experimental results of electrical rela-xation the method to increase the intensity of SHG is proposed.

• 전자공학회논문지D
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• 제36D권6호
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• pp.44-51
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• 1999

High density DRAM의 cell capacitor로 촉망 받고 있는 고유전체 BST박막 커패시터의 저 전계(<0.2MV/cm) 영역에서의 전기전도 현상을 분석하였다. 저 전계 영역에서 Pt/BST/Pt구조의 MIM 커패시터에 일정 전계를 인가한 후 전류를 측정하는 I(t)방법을 이용하여 유전완화전류와 누설전류를 분리해내어 박막의 측정온도 변화, 전계의 크기, 인가방향 변화, 후속 열처리에 따른 BST 박막의 전기전도 기구를 분석하였다. 그 결과, 유전완화전류는 Hoppiong process에 의한 BST박막내부의 trap된 전자들의 이동에 의한 전하재배치로 설명되어지며, 누설전류도 박막내의 trap에 의한 poole-Frenkel process에 의한 것임을 알 수 있었다. 그리고 각 전류성분에 기억하고 있는 trap이 BST박막내의 산호 결핍임을 추정하였다.

• 대한전자공학회논문지SD
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• 제38권5호
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• pp.329-337
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• 2001

고유전 (Ba, Sr)TiO/sub 3/ (BST) 박막을 이용한 DRAM storage capacitor의 저전계 영역에서의 전하손실을 발생시키는 커패시터의 누설전류는 유전완화전류와 진성 누설전류로 이루진다고 알려져 있다. 특히, 기가급 DRAM의 동작 전압(~IV)에서 유전완화전류가 진성 누설전류에 비해 훨씬 크기 때문에 이에 대한 심도 있는 연구가 필요하다. 본 연구에서는 thermally stimulated current (TSC) 측정법을 BST 박막에 처음으로 적용하여 트랩의 에너지 level 및 공정변화에 따른 트랩 밀도의 상대적 평가를 하였다. 그리고, 기존에 사용되던 전류-전압(I-V) 측정이나 전류-시간(I-t) 측정과 비교 및 분석함으로써 유전완화 전류의 원인을 규명하고 TSC 측정법의 신뢰성을 살펴보았다. 먼저 안정적인 TSC 측정을 위해 전계, 시간, 온도 및 승온속도에 따른 polarization condition을 알아보았다 이 조건을 이용한 TSC 측정으로부터 BST 박막에서의 트랩의 energy level이 0.20(±0.01) eV와 0.45(±0.02) eV임을 알 수 있었다. Rapid thermal annealing (RTA)을 이용한 후속 열처리에 따른 TSC 측정을 통하여 이 트랩들이 산소결핍(oxygen vacancy)에 기인함을 확인할 수 있었다. MIM BST 커패시터의 열처리에 대한 TSC 특성은 전류-전압(I-V) 및 전류-시간(I-t) 특성과 같은 경향성을 보인다. 이것은 TSC 측정이 BST 박막내의 트랩을 평가하는데 있어서 매우 효과적인 방법이라는 것을 보여준다.