• 한국결정성장학회지
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• 제5권4호
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• pp.394-399
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• 1995

산소 팔면체의 tilting에 의한 초격자 구조를 하고 있는 $(Na_{0.5}Sr_{0.5})(Ti_{0.5}Nb_{0.5})O_{3}$의 온도 변화에 다른 유전 특성 및 X-선 회절에 의한 구조의 변화를 살펴보았다. 유전 손실 측정에서 관측되는 380 K 부근의 peak는 primitive cell이 정방정에서 입방정으로 변화함에 따라 생기는 peak임을 알 수 있었으며 이 때 유전율의 변화는 관측되지 않았다. 따라서 유전 손실이 재료 내의 구조적 변화를 인지하는데 유전율보다 민감하다는 것을 알 수 있었다. Primitive cell 이 입방정으로 변화한 후에도 산소 팔면체의 tilting에 의한 초격자 회절선은 여전히 관측되었으며 500 K 정도에서 완전히 사라짐을 알 수 있었다. 하지만 이때 유전 특성의 변화는 관측되지 않았다.

• 지질공학
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• 제15권3호
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• pp.281-288
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• 2005

본 연구에서 는 복소유전율상수 반응으로부터 벤토나이트 공시체의 물성치인 체적함수비와 수분분포 특성 을 파악하기 위하여 수행되었다. 벤토나이트 재료는 현재 폐기물처분장에서 차수재료로 널리 이용되고 있다. 차수재료의 경우, 일반적으로 투수계수가 $10^{-7}\;cm/sec$ 이하로 작아야 한다. 난투수성 재료에 대해 온도구배 에 따른 수분분포 특성을 파악하기 위해 FDR-V 측정 장비를 적용해 이들을 측정하였다. 그 결과, 복소유전율상수는 체적 함수비와 온도 증가에 따라 함께 증가함을 알 수 있었다. 온도구배 에 따른 복소유전율상수 변화는 수분이동이 온도가 높은 쪽에서 낮은 쪽으로 증가함을 확인하였으며, 이는 수분분포 특성을 보여 준 것이다.

• 한국전자파학회논문지
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• 제25권10호
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• pp.1087-1094
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• 2014

본 연구에서는 유전체의 산란 특성 분석을 위해 이용되는 CFIE(Combined Field Integral Equation) 모멘트법의 계산효율을 높이기 위해 임피던스 경계면 조건을 적용시킨 수치해석 기법과 그 적용 범위에 대한 분석결과를 제시한다. 임피던스 경계면의 적용은 유전체의 등가 표면 전류(Js)와 등가 표면 자류(Ms)를 하나의 전류 또는 자류 성분으로 표현할 수 있으며, 임피던스 경계면 조건을 적용해 계산효율을 높인 수치해석 기법의 정확도는 기존의 CFIE 모멘트법과 이론값(Mie-series 해법, Small Perturbation 산란모델)을 이용하여 비교/분석하였다. 임피던스 경계면 조건을 적용한 수치해석 기법의 적용 범위 상대유전율 허수부 12 이상에서 1 dB 이내의 계산 편차를 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.22-22
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• 2010

0.1~5.0 at% CuO doped ZnO specimens were fabricated by a commercial ceramic process and sintered at 900~$1200^{\circ}C$ for 3h in air. The relative densities were over 97% for all samples and average grain size increased with CuO doping. The defect trap levels i.e. ionization energies of defects were increased linearly with CuO contents as 0.2 eV to 0.7 eV by using admittance spectroscopy and dielectric functions. The apparent activation energies of grain boundaries were varied but in the range of 0.96~1.1 eV. Dielectric constant were increased with CuO contents and sintering temperatures.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.979-986
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• 2001

This paper was researched the effect of slurry stability on the mechanical and electrical property of the porcelain insulator with various raw materials such as feldspar, quartz, clay and l7wt% alumina. The slurry was fabricated after ball milling the mixed raw materials. Green compacts were made by the extrusion and were sintered at 1300$\^{C}$ for 60min in the tunnel kiln. All of the specimens were densified 96% of the theoretical density. The 3-point flexural strength($\sigma$$\_$B/) of the specimen stabilized slurry pH 7.8 was 1650 k9/㎠ and the vickers hardness(Hv) and the fracture toughness(K$\_$IC/) were 27.5 GPa and 2.2 MPa$.$m$\^$$\sfrac{1}{2}$/, respectively. The mechanical properties of the specimen stabilized slurry PH 9.3 were 1716 kg/㎠($\sigma$$\_$B/), 27.6 GPa(Hv) and 3.0 MPa$.$m$\^$$\sfrac{1}{2}$/(K$\_$IC/), respectively. The dielectric strength was increased from 8.3kV/mm to 13.2kV/mm as the increase of the slurry pH from 7.8 to 9.3. Therefore the physical properties of the specimen stabilized slurry pH 9.3 were improved.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.679-687
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• 2001

It is known that amorphous BaTiO$_3$ thin films have good insulating properties[1][2]. In this investigation, amorphous BaTiO$_3$ thin films were deposited by rf magnetron sputtering on thick BaTiO$_3$ films of AC powder EL devices which were fabricated by screen-printing. The electrical and optical properties of the EL devices were then investigated. Adding amorphous BaTiO$_3$ thin film, it showed that leakage current density was decreased. Especially, leakage current density was decreased more with he sample of 0.5-hour deposition than the sample of 4-hours deposition. This result led to the improvement of luminous efficiency by 11%. It could be concluded that proper amorphous BaTiO$_3$ thin film deposition improved the surface property of dielectric layer.

• 한국세라믹학회지
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• 제33권1호
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• pp.17-24
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• 1996

Pb(Mg1/3Nb2/3)O3 powder with high purity chemical homogeniety and reactivity was prepared by solvent eva-poration of common solution. The common solution was fabricated using a Pb(NO3)2 Mg(NO)3 and NB solution which was prepared by dissolving NbC in H2O2 acquous solution. In precusor powder prepared by solvent evaporation method the synthetic temperature of Pb(Mg1/3 Nb2/3)O3 phase was lowered. And the formation of homogeneous Pb(Mg1/3Nb2/3)O3 phase was enhanced but the formation of pyrochlore phase was reduced. The dielectric constant of PMN ceramics from the synthesized powder was found to increase with both sintering temperature and excess MgO and subsequent analysis of the microstructures confirmed that this was due to an increase in grain size. The grain size dependence is explained as a consequence of low-permittivity grain boundaries.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1299-1300
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• 2007

In this study, low temperature sintering property of (1-x)$TiTe_{3}O_{8}-xMgTiO_{3}$ ceramics were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_{3}O_{8}$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_{3}O_{8}$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. The bulk densities and dielectric constants were decreased with increasing of $MgTiO_3$. However, the quality factors were increased with $MgTiO_3$ addition. Also, TCRF was shifted to negative(-) direction. Microwave dielectric properties of (1-x)$TiTe_{3}O_{8}-xMgTiO_{3}$ ceramics had similar tendency with calculated value by the mixing rule. The dielectric constant, quality factor and TCRF of $05TiTe_{3}O_{8}-0.5MgTiO_{3}$ ceramics sintered at $830^{\circ}C$ for 3h. were 26.19, 43,290GHz and $-3.9ppm/^{\circ}C$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1115-1118
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• 2006

Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at $190{\bullet}\;.{\bullet}$ To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then ${\alpha},{\omega}-dihexylquaterthiophene$ was drop-cast between source and drain electrical performance of the fabricated transistor.

• 한국군사과학기술학회지
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• 제12권5호
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• pp.644-651
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• 2009

In this paper, the design results of a $22.5^{\circ}$ diode phase shifter for the RADANT lens and two $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layer shows about $2^{\circ}$ phase shift error.