• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1473-1475
• /
• 2002

This study presents the dielectric properties of $Ta_2O_5$ MIM capacitor structure processed by thermal oxidation. The AES(auger electron emission) depth profile showed thermal oxidation effect gives rise to the $O_2$ deficiened into the new layer. The leakage current density respectively, at $1{\sim}3{\times}10^{-3}$(kV/cm) were $3{\times}10^{-4}-10^{-8}(A/cm^2)$. Leakage current density behavior is stable irrespective of applied electric field, the frequency va capacitance characteristic enhanced stability. The capacitance vs voltage measurement that, $V_{fb}$(flat-band voltage) was increase dependance on the thin films thickness, it is changed negative to positive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.135-138
• /
• 2003

The circular cavity resonator which can measure the dielectric properties of dielectrics in the V-band($50GHz{\sim}75GHz$) frequency range was designed and fabricated. Exciting and detecting of the resonator is peformed by WR15 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 53.29GHz, 12.87 and 138,000, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.164-168
• /
• 1996

The relation between crystallinity and thermal history in low density polyethylene thin films and their effect on electric conduction phenomena and dielectric breakdown was studied. The low density polythylene thin films obtained by the solution growth method heat-treated at 140[$^{\circ}C$] for 2 h and subsequently cooling to various ways. The degree of crystallinity was estimated by the X-ray diffraction measurement for the specimen of slowly cooling, ICE quenching and liquid nitrogen quenching. The result shows that the crystallinity decreases become faster as the cooling speed increased, and that conduction phenomenon is governed by the space charge limited current in high field. It was found that the dielectric breakdown field increases with an increase in cooling speed and test number in self-healing breakdown method.

• Journal of the Korean Ceramic Society
• /
• v.31 no.9
• /
• pp.1012-1220
• /
• 1994

BaTiO3 ceramics doped with 0.1 to 4.0 mol% Nb2O5 were prepared by conventional solid stage sintering process, so as to investigate the effect of the amount of Nb2O5 on the dielectric properties and complex impedance patterns of barium titanates. From the measurement of capacitance, we found that the dielectric constant of BaTiO3 samples with 1 mol% or more Nb2O5 remained approximately constant around room temperature with values higher than 2500. In this paper, the effect of impurity content as well as temperature on complex impedance patterns was discussed in detail. In particular, the grain and grain boundary behavior of samples which showed PTCR characteristics was discussed in terms of measuring temperature.

• Journal of the Optical Society of Korea
• /
• v.13 no.3
• /
• pp.398-402
• /
• 2009

We present a method of using one-dimensional dielectric multilayer structures for designing terahertz frequency spreading filters. The interference of terahertz pulses in these structures composed of alternating weak and strong refractive materials allows design of well-separated THz frequency components within a modulation-limited THz spectral envelope. The design characteristics of these coarse THz combs are limited by the saturation effect and also by the deformation of the THz pulse time-traveling within the structure. The details of the designed THz waveform synthesis from these THz multilayer spectral filters are verified by experiments using time-domain terahertz pulsed spectroscopy.

• Journal of the Microelectronics and Packaging Society
• /
• v.9 no.3
• /
• pp.13-17
• /
• 2002

In ceramic systems, many components including embedded passives and TRL(transmission line) are used for composition of 3-dimensional circuit. So the exact analysis on this components must be performed. As for the TRL's, material properties including electrical conductivity of metal, loss factor and effective dielectric constant of dielectric material and geometrical factors like roughness of surface, vias, dimension of stripline structure have a large effect on the charactersistics of transmission lines. In this research, effect of material and geometrical factors on the characteristics of stripline structure is analyzed and quantified by simulation and measurement.

• Journal of information and communication convergence engineering
• /
• v.8 no.4
• /
• pp.453-456
• /
• 2010

Tantalum oxide ($Ta_2O_5$) films are of considerable interest for a range of application, including optical waveguide devices, high temperature resistors, and oxygen sensors. In this paper, we establish an anode oxidation process of tantalum thin film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of tantalum oxide and electrolyte. As a result of the measurement on the electrical property of tantalum oxide thin film, when the thickness of the insulator film is $1500{\AA}$, the breakdown voltage is 350volts and dielectric constant is 29.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.71-74
• /
• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• Journal of Radiation Protection and Research
• /
• v.42 no.1
• /
• pp.21-25
• /
• 2017

Background: We are developing L-band and S-band microwave dielectric absorption systems aiming novel dosimetry using DNAs, such as plasmid DNA and genomic DNA, and microwave technology. Materials and Methods: Each system is composed of a cavity resonator, analog signal generator, circulator, power meter, and oscilloscope. Since the cavity resonator is sensitive to temperature change, we have made great efforts to prevent the fluctuation of temperature. We have developed software for controlling and measurement. Results and Discussion: By using this system, we can measure the resonance frequency, f, and ${\Delta}Q$ (Q is a dimensionless parameter that describes how under-damped an oscillator or resonator is, and characterizes a resonator's bandwidth relative to its center frequency) within about 3 minutes with high accuracy. Conclusion: This system will be expected to be applicable to DNAs evaluations and to novel dosimetric system.

• The Transactions of the Korean Institute of Electrical Engineers A
• /
• v.48 no.5
• /
• pp.502-507
• /
• 1999

An improved, accurate and reliable high-voltage measuring system utilizing a bushing-type capacitor is proposed in this study. This system measures voltages and phase angles of three-phase 22.9 kV power distribution lines and provides enough current to charge a battery for a motor-driven load switch and to operate the measuring and communication circuits for the distribution automation. For reliability, epoxy resin was used as the dielectric material of the bushing-type capacitor since the dielectric strength of epoxy resin is very stable over the wide range of temperature. Capacitances were investigated and found to be stable over the wide range of temperature and applied voltage, and the results indicate that the proposed measurement system is very reliable.